IGBT

HighspeedIGBTinTrenchandFieldstoptechnology
recommendedincombinationwithSiCDiodeIDH15S120

IGW25N120H3
1200Vhighspeedswitchingseriesthirdgeneration

Datasheet

IndustrialPowerControl
 IGW25N120H3
Highspeedswitchingseriesthirdgeneration

HighspeedIGBTinTrenchandFieldstoptechnology
recommendedincombinationwithSiCDiodeIDH15S120

Features: C
TRENCHSTOPTMtechnologyoffering
•bestinclassswitchingperformance:lessthan500µJtotal
switchinglossesachievable
•verylowVCEsat
•lowEMI G
•maximumjunctiontemperature175°C E
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications:

•solarinverters
•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
1
2
3
Packagepindefinition:

•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IGW25N120H3 1200V 25A 2.05V 175°C G25H1203 PG-TO247-3

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TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

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Highspeedswitchingseriesthirdgeneration

Maximumratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C IC 50.0 A
TC=100°C 25.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 100.0 A
TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 100.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time
VGE=15.0V,VCC≤600V
Allowed number of short circuits < 1000 tSC µs
Time between short circuits: ≥ 1.0s
Tvj=175°C 10
PowerdissipationTC=25°C 326.0
Ptot W
PowerdissipationTC=100°C 156.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
°C
wave soldering 1.6 mm (0.063 in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3

ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
Rth(j-c) 0.46 K/W
junction - case
Thermal resistance
Rth(j-a) 40 K/W
junction - ambient

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V
VGE=15.0V,IC=25.0A
Tvj=25°C - 2.05 2.40
Collector-emitter saturation voltage VCEsat V
Tvj=125°C - 2.50 -
Tvj=175°C - 2.70 -
Gate-emitter threshold voltage VGE(th) IC=0.85mA,VCE=VGE 5.0 5.8 6.5 V
VCE=1200V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 250.0 µA
Tvj=175°C - - 2500.0
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA
Transconductance gfs VCE=20V,IC=25.0A - 13.0 - S

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ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 1430 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 95 - pF
Reverse transfer capacitance Cres - 75 -
VCC=960V,IC=25.0A,
Gate charge QG - 115.0 - nC
VGE=15V
Short circuit collector current VGE=15.0V,VCC≤600V,
Max. 1000 short circuits IC(SC) tSC≤10µs - - A
Time between short circuits: ≥ 1.0s Tvj=175°C 87

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) Tvj=25°C, - 27 - ns
Rise time tr VCC=600V,IC=25.0A, - 41 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=23.0Ω,Lσ=80nH, - 277 - ns
Fall time tf Cσ=67pF - 17 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 1.80 - mJ
Turn-off energy Eoff diode (IKW25N120H3) reverse - 0.85 - mJ
recovery.
Total switching energy Ets - 2.65 - mJ

Turn-on energy Eon Tvj=25°C, - 0.08 - mJ

Turn-off energy Eoff VCC=800V,IC=10.0A, - 0.27 - mJ
VGE=0.0/15.0V,
Total switching energy Ets rG=3.0Ω,Lσ=80nH, - 0.35 - mJ
Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IDH15S120) reverse
recovery.

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Highspeedswitchingseriesthirdgeneration

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) Tvj=175°C, - 26 - ns
Rise time tr VCC=600V,IC=25.0A, - 35 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=23.0Ω,Lσ=80nH, - 347 - ns
Fall time tf Cσ=67pF - 50 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 2.60 - mJ
Turn-off energy Eoff diode (IKW25N120H3) reverse - 1.70 - mJ
recovery.
Total switching energy Ets - 4.30 - mJ

Turn-on energy Eon Tvj=175°C, - 0.10 - mJ

Turn-off energy Eoff VCC=800V,IC=10.0A, - 0.62 - mJ
VGE=0.0/15.0V,
Total switching energy Ets rG=3.0Ω,Lσ=80nH, - 0.72 - mJ
Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IDH15S120) reverse
recovery.

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Highspeedswitchingseriesthirdgeneration

110

100 100

90
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
80 tp=1µs

10µs
70
10
50µs
60
100µs
50 200µs

40 500µs

1 DC
30 TC=80°

TC=110°
20
TC=80°
10
TC=110°

0 0.1
1 10 100 1000 1 10 100 1000
f,SWITCHINGFREQUENCY[kHz] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching Figure 2. Forwardbiassafeoperatingarea
frequency (D=0,TC=25°C,Tj≤175°C;VGE=15V)
(Tj≤175°C,D=0.5,VCE=600V,VGE=15/0V,
rG=23Ω)

350 50

300
40
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]

250

30
200

150
20

100

10
50

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C] TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase Figure 4. Collectorcurrentasafunctionofcase
temperature temperature
(Tj≤175°C) (VGE≥15V,Tj≤175°C)

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100 100

90
VGE=20V VGE=20V

80 17V 80 17V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
15V 15V
70
13V 13V

60 11V 60 11V

9V 9V
50
7V 7V
40 40
5V 5V

30

20 20

10

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 2 4 6 8
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaloutputcharacteristic
(Tj=25°C) (Tj=175°C)

75 5.0
Tj=25°C IC=12.5A
Tj=175°C IC=25A
VCE(sat),COLLECTOR-EMITTERSATURATION[V]

4.5 IC=50A

60
4.0
IC,COLLECTORCURRENT[A]

3.5
45

3.0

30
2.5

2.0
15

1.5

0 1.0
5 10 15 0 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic Figure 8. Typicalcollector-emittersaturationvoltageas
(VCE=20V) afunctionofjunctiontemperature
(VGE=15V)

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Highspeedswitchingseriesthirdgeneration

1000 1000
td(off) td(off)
tf tf
td(on) td(on)
tr tr
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
100 100

10 10
5 15 25 35 45 5 15 25 35 45 55 65
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistor
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V, (ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
rG=23Ω,testcircuitinFig.E) IC=25A,testcircuitinFig.E)

1000 7
td(off) typ.
tf min.
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

td(on) max.
tr
6
t,SWITCHINGTIMES[ns]

100

10 2
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
Tj,JUNCTIONTEMPERATURE[°C] Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof Figure 12. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(ind.load,VCE=600V,VGE=15/0V,IC=25A, (IC=0.85mA)
rG=23Ω,testcircuitinFig.E)
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12 7
Eoff Eoff
Eon Eon
Ets Ets
6
10
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
5
8

4
2

2
1

0 0
5 15 25 35 45 5 15 25 35 45 55 65
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistor
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V, (ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
rG=23Ω,testcircuitinFig.E) IC=25A,testcircuitinFig.E)

6
Eoff Eoff
Eon Eon
4 Ets Ets
5
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]

3 4

3
2

1
1

0 0
0 25 50 75 100 125 150 175 400 500 600 700 800
Tj,JUNCTIONTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(indload,VCE=600V,VGE=15/0V,IC=25A, (ind.load,Tj=175°C,VGE=15/0V,IC=25A,
rG=23Ω,testcircuitinFig.E) rG=23Ω,testcircuitinFig.E)
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Highspeedswitchingseriesthirdgeneration

2.0 1.2
Eoff Eoff
Eon Eon
1.8
Ets Ets
1.0

E,SWITCHINGENERGYLOSSES[mJ]
1.6
E,SWITCHINGENERGYLOSSES[mJ]

1.4
0.8

1.2

1.0 0.6

0.8

0.4
0.6

0.4
0.2

0.2

0.0 0.0
0 5 10 15 20 25 0 5 10 15 20 25
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 1. Typicalswitchingenergylossesasafunction Figure 2. Typicalswitchingenergylossesasafunction
ofcollectorcurrent ofgateresistor
(ind.load,Tj=125°C,VCE=800V,VGE=15/0V, (ind.load,Tj=125°C,VCE=800V,VGE=15/0V,
rG=3Ω,DiodeIDH15S120) IC=10A,DiodeIDH15S120)

0.8 0.8
Eoff Eoff
Eon Eon
Ets 0.7 Ets
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]

0.6 0.6

0.5

0.4 0.4

0.3

0.2 0.2

0.1

0.0 0.0
25 50 75 100 125 400 500 600 700 800
Tj,JUNCTIONTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Typicalswitchingenergylossesasafunction Figure 4. Typicalswitchingenergylossesasafunction
ofjunctiontemperature ofcollectoremittervoltage
(indload,VCE=800V,VGE=15/0V,IC=10A, (ind.load,Tj=125°C,VGE=15/0V,IC=10A,
rG=3Ω,DiodeIDH15S120) rG=3Ω,DiodeIDH15S120)
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Highspeedswitchingseriesthirdgeneration

16
240V
960V
14

1000
VGE,GATE-EMITTERVOLTAGE[V]

12
Cies
Coes

C,CAPACITANCE[pF]
Cres
10

100
6

0 10
0 20 40 60 80 100 120 0 10 20 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalgatecharge Figure 18. Typicalcapacitanceasafunctionof
(IC=25A) collector-emittervoltage
(VGE=0V,f=1MHz)

180 50
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]

160
tSC,SHORTCIRCUITWITHSTANDTIME[µs]

40
140

120
30

100

20
80

60
10

40

20 0
10 12 14 16 18 10 12 14 16 18 20
VGE,GATE-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Typicalshortcircuitcollectorcurrentasa Figure 20. Shortcircuitwithstandtimeasafunctionof
functionofgate-emittervoltage gate-emittervoltage
(VCE≤600V,startatTj=25°C) (VCE≤600V,startatTj≤150°C)

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1
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

D=0.5
0.2
0.1 0.1
0.05
0.02
0.01
single pulse

0.01

i: 1 2 3 4 5
ri[K/W]: 0.08133 0.09366 0.22305 0.05925 5.7E-3
τi[s]: 2.6E-4 1.7E-3 0.01009673 0.0336145 0.2730749

0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s]
Figure 21. IGBTtransientthermalimpedance
(D=tp/T)

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 IGW25N120H3
Highspeedswitchingseriesthirdgeneration

PG-TO247-3

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 IGW25N120H3
Highspeedswitchingseriesthirdgeneration

vGE(t)
90% VGE
a b

a b

t
iC(t)

90% IC
90% IC

10% IC 10% IC
t

vCE(t)

td(off) tf td(on) tr
t

vGE(t)
90% VGE

10% VGE
t
iC(t)

2% IC
t

vCE(t)

2% VCE
t1 t2 t3 t4
t

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 IGW25N120H3
Highspeedswitchingseriesthirdgeneration

RevisionHistory
IGW25N120H3

Revision:2014-02-27,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2011-12-12 Preliminary data sheet
2.1 2014-02-27 Final data sheet

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Publishedby
InfineonTechnologiesAG
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81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.

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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.
Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,
includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

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Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon
TechnologiesOffice(www.infineon.com).

Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin
question,pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems
and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon
Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain
and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe
endangered.

15 Rev.2.1,2014-02-27