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BC817-40W 45 V, 0.5 A, General Purpose NPN Transistor: Features
BC817-40W 45 V, 0.5 A, General Purpose NPN Transistor: Features
45 V, 0.5 A, General
Purpose NPN Transistor
ON Semiconductor’s BC817−40W is a General Purpose NPN
Transistor that is housed in the SC−70/SOT−323 package.
Features www.onsemi.com
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable COLLECTOR
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS 3
Compliant
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BASE
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit 2
Collector − Emitter Voltage VCEO 45 V EMITTER
Junction and Storage Temperature TJ, Tstg −55 to +150 °C MARKING DIAGRAM
Range
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be CE MG
assumed, damage may occur and reliability may be affected. G
1. FR−4 Board, 1 oz. Cu, 100 mm2
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ORDERING INFORMATION†
Device Package Shipping
BC817−40WT1G SC−70 3000 / Tape &
(Pb−Free) Reel
NSVBC817−40WT1G SC−70 3000 / Tape &
(Pb−Free) Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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BC817−40W
TYPICAL CHARACTERISTICS
700 1
150°C VCE = 1 V IC/IB = 10
VCE(sat), COLLECTOR−EMITTER
600
150°C
500
0.1 25°C
25°C
400 −55°C
300
−55°C
0.01
200
100
0 0.001
0.001 0.01 0.1 1 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector Figure 2. Collector Emitter Saturation Voltage
Current vs. Collector Current
1.1 1.2
1.0 IC/IB = 10 −55°C VBE(on), BASE−EMITTER VOLTAGE (V) 1.1 VCE = 5 V
SATURATION VOLTAGE (V)
1.0
VBE(sat), BASE−EMITTER
0.9
0.9 −55°C
0.8 25°C
0.8
0.7
0.7 25°C
0.6 150°C
0.6
0.5
0.5
150°C
0.4 0.4
0.3 0.3
0.2 0.2
0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs. Figure 4. Base Emitter Voltage vs. Collector
Collector Current Current
1000
fT, CURRENT−GAIN−BANDWIDTH
VCE = 1 V
TA = 25°C
PRODUCT (MHz)
100
10
0.1 1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
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BC817−40W
TYPICAL CHARACTERISTICS
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
0.6
0
0.01 0.1 1 10 100 1 10 100 1000
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
100
C, CAPACITANCE (pF)
Cib
10
Cob
1
0.1 1 10 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitances
1
100 ms 1 ms
1s 10 ms
Thermal Limit
0.1
IC (A)
0.01
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
DATE 11 NOV 2008
SCALE 4:1
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
e1 2. CONTROLLING DIMENSION: INCH.
MILLIMETERS INCHES
3 DIM MIN NOM MAX MIN NOM MAX
A 0.80 0.90 1.00 0.032 0.035 0.040
HE E A1 0.00 0.05 0.10 0.000 0.002 0.004
1 2 A2 0.70 REF 0.028 REF
b 0.30 0.35 0.40 0.012 0.014 0.016
c 0.10 0.18 0.25 0.004 0.007 0.010
D 1.80 2.10 2.20 0.071 0.083 0.087
b E 1.15 1.24 1.35 0.045 0.049 0.053
e 1.20 1.30 1.40 0.047 0.051 0.055
e e1 0.65 BSC 0.026 BSC
L 0.20 0.38 0.56 0.008 0.015 0.022
HE 2.00 2.10 2.40 0.079 0.083 0.095
c
A A2
GENERIC
0.05 (0.002) L MARKING DIAGRAM
A1
SOLDERING FOOTPRINT* XX MG
G
0.65
0.65 0.025 1
0.025 XX = Specific Device Code
M = Date Code
G = Pb−Free Package
0.7
0.028
SCALE 10:1 ǒinches
mm Ǔ
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DOCUMENT NUMBER: 98ASB42819B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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