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Sipmos Power Transistor: Product Summary Features
Sipmos Power Transistor: Product Summary Features
Sipmos Power Transistor: Product Summary Features
• dv/dt rated
• 175˚C operating temperature
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 6.25 K/W
Thermal resistance, junction - ambient, leded RthJA - - 100
SMD version, device on PCB: RthJA
@ min. footprint - - 75
@ 6 cm 2 cooling area1) - - 50
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Reverse Diode
Inverse diode continuous forward current IS - - 9.2 A
TC = 25 ˚C
Inverse diode direct current,pulsed I SM - - 37
TC = 25 ˚C
Inverse diode forward voltage VSD - 1.05 1.8 V
VGS = 0 V, I F = 18.5 A
Reverse recovery time t rr - 50 75 ns
VR = 30 V, IF=IS , diF/dt = 100 A/µs
Reverse recovery charge Q rr - 0.085 0.13 µC
VR = 30 V, IF=l S , diF/dt = 100 A/µs
22
9
20
8
18
Ptot
16 7
ID
14 6
12 5
10
4
8
3
6
2
4
2 1
0 0
0 20 40 60 80 100 120 140 160 ˚C 190 0 20 40 60 80 100 120 140 160 ˚C 190
TC TC
tp = 2.5µs K/W
A
10 0
D
10 µs
/I
10 1
Z thJC
DS
V
=
ID
n)
(o
DS
100 µs
10 -1
R
D = 0.50
0.20
0 0.10
10 1 ms
0.05
10 ms 10 -2 single pulse
0.02
DC
0.01
10 -1 -1 0 1 2
10 -3 -7 -6 -5 -4 -3 -2 0
10 10 10 V 10 10 10 10 10 10 10 s 10
VDS tp
VGS [V]
Ω
20
l k j a 4.0
18 b 4.5
i c 5.0
0.24
RDS(on)
16 d 5.5
h e
ID
6.0
14 0.20
f 6.5
g
12 g 7.0
h 7.5 0.16
10 f i 8.0
j 9.0 j
8 0.12
e k 10.0 k
6 l 20.0
d l
0.08
4
c
2 0.04 VGS [V] =
b c d e f g h i j k l
a 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0
0.0 1.0 2.0 3.0 4.0 V 5.5 0.00
0 2 4 6 8 10 12 14 16 A 19
VDS
ID
Typ. transfer characteristics I D= f (VGS) Typ. forward transconductance
parameter: tp = 80 µs gfs = f(ID ); Tj = 25˚C
VDS ≥ 2 x I D x RDS(on) max parameter: gfs
30 6
A S
20 4
gfs
ID
15 3
10 2
5 1
0 0
0 1 2 3 4 5 6 7 8 V 10 0 2 4 6 8 10 12 14 16 A 20
VGS ID
0.28 4.0
VGS(th)
3.6
RDS(on)
0.24
3.2
0.20 2.8
2.4 max
0.16
98% 2.0
typ
0.12 1.6
typ
1.2
0.08
0.8
min
0.04 0.4
0.0
0.00 -60 -20 20 60 100 140 V 200
-60 -20 20 60 100 140 ˚C 200
Tj
Tj
Typ. capacitances Forward characteristics of reverse diode
C = f (VDS) IF = f (VSD )
parameter: V GS = 0 V, f = 1 MHz parameter: Tj , tp = 80 µs
SPD09N05
10 3 10 2
pF
Ciss 10 1
IF
C
10 2
Coss
10 0
Crss Tj = 25 ˚C typ
Tj = 175 ˚C typ
Tj = 25 ˚C (98%)
Tj = 175 ˚C (98%)
10 1 10 -1
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD
mJ V
30 12
VGS
EAS
25 10
0,2 VDS max 0,8 VDS max
20 8
15 6
10 4
5 2
0 0
20 40 60 80 100 120 140 ˚C 180 0 2 4 6 8 nC 11
Tj Q Gate
SPD09N05
66
V
64
V(BR)DSS
62
60
58
56
54
52
50
-60 -20 20 60 100 140 ˚C 200
Tj
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