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BC546 PDF
BC546 PDF
BC546/547/548/549/550
1 TO-92
1. Collector 2. Base 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BC546 80 V
: BC547/550 50 V
: BC548/549 30 V
VCEO Collector-Emitter Voltage : BC546 65 V
: BC547/550 45 V
: BC548/549 30 V
VEBO Emitter-Base Voltage : BC546/547 6 V
: BC548/549/550 5 V
IC Collector Current (DC) 100 mA
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C
hFE Classification
Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800
100 100
IB = 400µA VCE = 5V
80 IB = 350µA
IB = 300µA
10
IB = 250µA
60
IB = 200µA
40 IB = 150µA
1
IB = 100µA
20
IB = 50µA
0.1
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0 2 4 6 8 10 12 14 16 18 20
VCE = 5V IC = 10 IB
1000
hFE, DC CURRENT GAIN
1000 V BE(sat)
100
100
10 V CE(sat)
1 10
1 10 100 1000 1 10 100 1000
100 1000
fT, CURRENT GAIN-BANDWIDTH PRODUCT
VCE = 5V
f=1MHz
IE = 0
Cob[pF], CAPACITANCE
10 100
1 10
0.1 1
1 10 100 1000 0.1 1 10 100
TO-92
+0.25
4.58 –0.15
4.58 ±0.20
0.46 ±0.10
14.47 ±0.40
+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]
3.60 ±0.20
3.86MAX
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
(R2.29)
Dimensions in Millimeters
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