2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486

Discrete POWER & Signal

Technologies

2N5484 MMBF5484
2N5485 MMBF5485
2N5486 MMBF5486

D
G TO-92
S SOT-23 S
D
Mark: 6B / 6M / 6H

N-Channel RF Amplifier
This device is designed primarily for electronic switching
applications such as low On Resistance analog switching.
Sourced from Process 50.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

VDG Drain-Gate Voltage 25 V
VGS Gate-Source Voltage - 25 V
IGF Forward Gate Current 10 mA
TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N5484 *MMBF5484
PD Total Device Dissipation 350 225 mW
Derate above 25°C 2.8 1.8 mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

ã 1997 Fairchild Semiconductor Corporation

 2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
N-Channel RF Amplifier
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

OFF CHARACTERISTICS
V(BR)GSS Gate-Source Breakdown Voltage IG = - 1.0 µA, VDS = 0 - 25 V
IGSS Gate Reverse Current VGS = - 20 V, VDS = 0 - 1.0 nA
VGS = - 20 V, VDS = 0, TA = 100°C - 0.2 µA
VGS(off) Gate-Source Cutoff Voltage VDS = 15 V, ID = 10 nA 2N5484 - 0.3 - 3.0 V
2N5485 - 0.5 - 4.0 V
2N5486 - 2.0 - 6.0 V

ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0 2N5484 1.0 5.0 mA
2N5485 4.0 10 mA
2N5486 8.0 20 mA

SMALL SIGNAL CHARACTERISTICS

gfs Forward Transfer Conductance VDS = 15, VGS = 0, f = 1.0 kHz
2N5484 3000 6000 µmhos
2N5485 3500 7000 µmhos
2N5486 4000 8000 µmhos
Re(yis) Input Conductance VDS = 15, VGS = 0, f = 100 MHz
2N5484 100 µmhos
VDS = 15, VGS = 0, f = 400 MHz
2N5485 / 2N5486 1000 µmhos
gos Output Conductance VDS = 15, VGS = 0, f = 1.0 kHz
2N5484 50 µmhos
2N5485 60 µmhos
2N5486 75 µmhos
Re(yos) Output Conductance VDS = 15, VGS = 0, f = 100 MHz
2N5484 75 µmhos
VDS = 15, VGS = 0, f = 400 MHz
2N5485 / 2N5486 100 µmhos
Re(yfs) Forward Transconductance VDS = 15, VGS = 0, f = 100 MHz
2N5484 2500 µmhos
VDS = 15, VGS = 0, f = 400 MHz
2N5485 3000 µmhos
2N5486 3500 µmhos
Ciss Input Capacitance VDS = 15, VGS = 0, f = 1.0 MHz 5.0 pF
Crss Reverse Transfer Capacitance VDS = 15, VGS = 0, f = 1.0 MHz 1.0 pF
Coss Output Capacitance VDS = 15, VGS = 0, f = 1.0 MHz 2.0 pF
NF Noise Figure VDS= 15 V, RG = 1.0 kΩ,
f = 100 MHz 2N5484 3.0 dB
VDS= 15 V, RG = 1.0 kΩ,
f = 400 MHz 2N5484 4.0 dB
VDS= 15 V , RG = 1.0 kΩ,
f = 100 MHz 2N5485 / 2N5486 2.0 dB
VDS= 15 V, RG = 1.0 kΩ,
f = 400 MHz 2N5485 / 2N5486 4.0 dB
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2%
 2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
N-Channel RF Amplifier
(continued)

Typical Characteristics

Transfer Characteristics Channel Resistance vs Temperature

20 1000
V GS(OFF) = -4.5V V DS = 15V

r DS - DRAIN ON RESISTANCE ( Ω)
O
TA = -55 C 500 V GS(OFF) = -1.0V
ID - DRAIN CURRENT (mA)

16
T A = +25 C
O
300
200 -2.5 V
12 T A = +125O C O
TA = -55 C -5.0V
O 100
T A = +25 C
8 -8.0 V
T A = +125O C 50

30
4
20 V DS = 100mV
-2.5 V V =0V
GS
0 10
0 -1 -2 -3 -4 -5 -50 0 50 100 150
VGS- GATE-SOURCE VOLTAGE(V) T A - AMBIENT TEMPERATURE (°C)

Transconductance Common Drain-Source

Characteristics Characteristics
gfs -- TRANSCONDUCTANCE (mmhos)

7 5
5V .0V
O
TA = -55 C V = 15V T A = +25 C
O
DS
-0. -1
I D -- DRAIN CURRENT (mA)

6 O
V
T A = +25 C
4 TYP V GS(OFF)
= -5.0V -1.5
5 T A = +125O C -2.0V
TA = -55 C
O
0V
=
4
3 -2.5V
GS
O
T A = +25 C V
3 T A = +125O C 2 -3.0V

2 -3.5V
V GS(OFF) = -4.5V 1
1 -2.5 V -4.0V

0 0
0 -1 -2 -3 -4 -5 0 0.2 0.4 0.6 0.8 1
VGS- GATE-SOURCE VOLTAGE(V) VDS - DRAIN-SOURCE VOLTAGE(V)

Output Conductance vs Transconductance

Drain Current Parameter Interactions
gos -- OUTPUT CONDUCTANCE (u mhos)

gfs --- TRANSCONDUCTANCE ( mmhos )

r DS -- DRAIN "ON" RESISTANCE ( Ω )

100
-- DRAIN CURRENT ( mA )

O
T A = +25 C gfs, I DSS @ V DS = 15 V, V GS = 0 PULSE
V GS(OFF)
= -5.5V
f = 1.0 kHz 5.0V r DS @ VDS= 100mV, V GS = 0 50
20
V = 5v 10V 30
10 DG 15V
5 20
5 10 20V
15 10
20 15 10
20
1 5
V GS(OFF)
= -3.5V
0.5 3
DSS

20 2
V GS(OFF)
= -1.5V VGS(OFF) @ VGS = 15V, I D= 1nA
I

0.1 10 1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 -1 -2 -3 -5 -7 - 10
I D -- DRAIN CURRENT (mA) V - GATE-SOURCE VOLTAGE(V)
GS
 2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
N-Channel RF Amplifier
(continued)

Typical Characteristics (continued)

Transconductance vs Noise Voltage vs Frequency

Drain Current V DG = 15V
gfs -- TRANSCONDUCTANCE (mmhos)

Hz )
10 BW = 6.0 Hz @ f = 10 Hz, 100 Hz
V GS
GS(OFF) = - 1.5V = 0.2 f @ f > 1.0 kHz
O

5 TA = -55 C

e n- NOISE VOLTAGE ( nV/

O
T A = +25 C
T A = +125 O C
O
TA = -55 C
1
O
T A = +25 C I D = 0.5 mA
0.5 T A = +125 O C 10
V GS
GS(OFF) = - 5V 5
I D = 3 mA
V DG = 15V
f = 1.0 kHz
0.1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 1
0.01 0.03 0.1 0.3 1 3 10 30 100
I - DRAIN CURRENT (mA)
D f -- FREQUENCY (kHz)

Capacitance vs Voltage Noise Figure Frequency

10 5
f = 0.1 - 1.0 MHz V DS = 15V
) -- CAPACITANCE (pF)

5 I = 5.0 mA
NF -- NOISE FIGURE (dB)

D
4
R g = 1.0 k Ω
O
C isC( V (DSV = 15
= V)
15 V) T A = +25 C
3
1 C rs ( V = 0 V)
DS
2
rs
C is ( C

0
0 -5 -10 -15 -20 10 20 30 50 100 200 300 500 1000
VGS-- GATE-SOURCE VOLTAGE(V) f -- FREQUENCY (MHz)

Power Dissipation vs
Ambient Temperature
350
PD - POWER DISSIPATION (mW)

300

250 SOT-23 TO-92

200

150

100

50

0
0 25 50 75 100 125 150
o
TEMPERATURE ( C)
 2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
N-Channel RF Amplifier
(continued)

Common Source Characteristics

Input Admittance Output Admittance

-- OUTPUT CONDUCTANCE (mmhos)

10 1
Yiss -- INPUT ADMITTANCE (mmhos)

V DS = 15V
5 V GS = 0
(CS)
b OSS (x 10)

g OSS
1
b iss

g iss V DS = 15V
V GS = 0
(CS)

OSS
Y
100 200 300 500 700 1000 100 200 300 500 700 1000
f -- FREQUENCY (MHz) f -- FREQUENCY (MHz)

Forward Transadmittance Reverse Transadmittance

10 10
Y rss-- REVERSE TRANSFER (mmhos)
Yfss -- FORWARD TRANSFER (mmhos)

5 5
+g
fss

- b rss
-b fss
1 1

-g rss
( X 0.1)
V DS = 15V V DS = 15V
V GS = 0 V GS = 0

(CS) (CS)

100 200 300 500 700 1000 100 200 300 500 700 1000
f -- FREQUENCY (MHz) f -- FREQUENCY (MHz)
 2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
N-Channel RF Amplifier
(continued)

Common Gate Characteristics

Input Admittance Output Admittance

Y ogs-- OUTPUT CONDUCTANCE (mmhos)

1
Yigs -- INPUT ADMITTANCE (mmhos)

V DS = 15V
V GS = 0
(CG)
b OgS (x 10)

g
10 Ogs
g igs
5

b igs V DS = 15V
V GS = 0
(CG)
1
100 200 300 500 700 1000 100 200 300 500 700 1000
f -- FREQUENCY (MHz) f -- FREQUENCY (MHz)

Forward Transadmittance Reverse Transadmittance

10 1
Y rgs-- REVERSE TRANSFER (mmhos)
Yfgs -- FORWARD TRANSFER (mmhos)

V DS = 15V
5 +g fgs V GS = 0
(CG)
g
rgs

-b fgs
1

- b rgs

V DS = 15V
V GS = 0
(CG)

100 200 300 500 700 1000 100 200 300 500 700 1000
f -- FREQUENCY (MHz) f -- FREQUENCY (MHz)
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

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Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.