SIPMOS ® Power Transistor BUZ 31L

• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level

Pin 1 Pin 2 Pin 3

G D S

Type VDS ID RDS(on) Package Pb-free

BUZ 31 L 200 V 13.5 A 0.2 Ω PG-TO220-3 Yes

Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TC = 28 ˚C 13.5
Pulsed drain current IDpuls
TC = 25 ˚C 54
Avalanche current,limited by Tjmax IAR 13.5
Avalanche energy,periodic limited by Tjmax EAR 9 mJ
Avalanche energy, single pulse EAS
ID = 13.5 A, VDD = 50 V, RGS = 25 Ω
L = 1.65 mH, Tj = 25 ˚C 200
Gate source voltage VGS ± 20 V
ESD-Sensitivity HBM as per MIL-STD 883 Class 1
Power dissipation Ptot W
TC = 25 ˚C 95
Operating temperature Tj -55 ... + 150 ˚C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC ≤ 1.32 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Rev. 2.3 Page 1 2009-03-30

 BUZ 31L

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C 200 - -
Gate threshold voltage VGS(th)
VGS=VDS, ID = 1 mA 1.2 1.6 2
Zero gate voltage drain current IDSS µA
VDS = 200 V, VGS = 0 V, Tj = 25 ˚C - 0.1 1
VDS = 200 V, VGS = 0 V, Tj = 125 ˚C - 10 100
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 10 100
Drain-Source on-resistance RDS(on) Ω
VGS = 5 V, ID = 7 A - 0.16 0.2

Rev. 2.3 Page 2 2009-03-30

 BUZ 31L

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = 7 A 5 12 -
Input capacitance Ciss pF
VGS = 0 V, VDS = 25 V, f = 1 MHz - 1200 1600
Output capacitance Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 200 300
Reverse transfer capacitance Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 100 150
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50 Ω - 25 40
Rise time tr
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50 Ω - 80 120
Turn-off delay time td(off)
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50 Ω - 210 270
Fall time tf
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50 Ω - 65 85

Rev. 2.3 Page 3 2009-03-30

 BUZ 31L

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TC = 25 ˚C - - 13.5
Inverse diode direct current,pulsed ISM
TC = 25 ˚C - - 54
Inverse diode forward voltage VSD V
VGS = 0 V, IF = 27 A - 1.2 1.6
Reverse recovery time trr ns
VR = 100 V, IF=lS, diF/dt = 100 A/µs - 180 -
Reverse recovery charge Qrr µC
VR = 100 V, IF=lS, diF/dt = 100 A/µs - 1.2 -

Rev. 2.3 Page 4 2009-03-30

 BUZ 31L

Power dissipation Drain current

Ptot = ƒ(TC) ID = ƒ(TC)
parameter: VGS ≥ 5 V

100 14

W A

12
Ptot 80 ID 11

70 10

9
60
8
50 7

6
40
5
30
4

20 3

2
10
1
0 0
0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 ˚C 160
TC TC

Safe operating area Transient thermal impedance

ID = ƒ(VDS) Zth JC = ƒ(tp)
parameter: D = 0.01, TC = 25˚C parameter: D = tp / T

10 2 10 1
tp = 15.0µs

K/W
D

A
/I
DS

ID
V

ZthJC
10 0
=

100 µs
n)
(o
DS

10 1
R

1 ms

10 -1
D = 0.50
10 ms
0.20
10 0 0.10
0.05
10 -2
DC 0.02
0.01

single pulse

10 -1 10 -3
0 1 2 -7 -6 -5 -4 -3 -2 -1 0
10 10 10 V 10 10 10 10 10 10 10 s 10
VDS tp

Rev. 2.3 Page 5 2009-03-30

 BUZ 31L

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs , Tj = 25 ˚C parameter: tp = 80 µs, Tj = 25 ˚C

30 0.65
Ptot = 95W
lkj i h g f
A e Ω a b c d
26
VGS [V] 0.55
ID 24 a 3.0 RDS (on)
d b 0.50
22 3.5
c 4.0 0.45
20
d 4.5
18 e 5.0
0.40
c f 5.5
16 0.35
g 6.0
14 0.30
h 6.5
12 i 7.0
0.25
b j 8.0
10 e
k 9.0 0.20
8 f
l 10.0 g
0.15 i h
6 k j
l
a 0.10
4 VGS [V] =
a b c d e f g h i j k l
2 0.05 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 9.0 10.0
0 0.00
0 2 4 6 8 V 11 0 4 8 12 16 20 A 26
VDS ID

Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max

22 18

A
S

18
ID gfs 14
16
12
14

12 10

10 8

8
6
6
4
4

2
2
0 0
0 1 2 3 4 5 6 7 8 V 10 0 2 4 6 8 10 12 14 16 A 20
VGS ID

Rev. 2.3 Page 6 2009-03-30

 BUZ 31L

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj) VGS (th) = ƒ(Tj)
parameter: ID = 7 A, VGS = 5 V parameter: VGS = VDS, ID = 1 mA

0.65
4.6
Ω V

0.55 4.0
RDS (on) VGS(th)
0.50 3.6

0.45 3.2
0.40
2.8
0.35
2.4
0.30 98%
98% 2.0
0.25 typ
typ 1.6
0.20 2%
1.2
0.15

0.10 0.8

0.05 0.4
0.00 0.0
-60 -20 20 60 100 ˚C 160 -60 -20 20 60 100 ˚C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS = 0V, f = 1MHz parameter: Tj, tp = 80 µs

10 1 10 2

nF A
C IF

10 0 Ciss 10 1

Coss

10 -1 10 0
Crss
Tj = 25 ˚C typ
Tj = 150 ˚C typ
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)

10 -2 10 -1
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Rev. 2.3 Page 7 2009-03-30

 BUZ 31L

Avalanche energy EAS = ƒ(Tj) Typ. gate charge

parameter: ID = 13.5 A, VDD = 50 V VGS = ƒ(QGate)
RGS = 25 Ω, L = 1.65 mH parameter: ID puls = 21 A

220 16

mJ
V
180
EAS VGS
12
160

140 10

120
8 0,2 VDS max 0,8 VDS max
100

80 6

60
4
40
2
20
0 0
20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 nC 150
Tj QGate

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

240

230
V(BR)DSS
225

220

215

210

205

200

195

190

185
180
-60 -20 20 60 100 ˚C 160
Tj

Rev. 2.3 Page 8 2009-03-30

 BUZ 31L

PG-TO220-3

Rev. 2.3 Page 9 2009-03-30

 BUZ 31L

Rev 2.3 Page 10 2009-03-30