Accepted Manuscript

Optical and structural properties in type-II InAlAs/AlGaAs quantum dots observed by

photoluminescence, X-ray diffraction and transmission electron microscopy

A. Ben Daly, D. Craciun, E-Laura Ursu, A. Lemaître, M.A. Maaref, F. Iacomi, B.S.
Vasile, V. Craciun

PII: S0749-6036(17)31403-9
DOI: 10.1016/j.spmi.2017.08.017
Reference: YSPMI 5192

To appear in: Superlattices and Microstructures

Received Date: 7 June 2017

Revised Date: 6 August 2017
Accepted Date: 6 August 2017

Please cite this article as: A. Ben Daly, D. Craciun, E.-L. Ursu, A. Lemaître, M.A. Maaref, F. Iacomi, B.S.
Vasile, V. Craciun, Optical and structural properties in type-II InAlAs/AlGaAs quantum dots observed
by photoluminescence, X-ray diffraction and transmission electron microscopy, Superlattices and
Microstructures (2017), doi: 10.1016/j.spmi.2017.08.017.

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 ACCEPTED MANUSCRIPT
Optical and structural properties in type-II InAlAs/AlGaAs quantum dots
observed by photoluminescence, X-ray diffraction and transmission
electron microscopy

A. Ben Daly1, D. Craciun2, E-Laura Ursu3, A. Lemaître4, M. A. Maaref 1, F. Iacomi5, B. S.

Vasile6, and V. Craciun2

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1
Laboratoire Matériaux, Molécules et Applications, Institut Préparatoire aux Études
Scientifiques et Techniques, BP 51, 2070 La Marsa, Université de Carthage, Tunis, Tunisia

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2
National Institute for Laser, Plasma and Radiation Physics, Magurele, Romania
3

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Centre of Advanced Research in Bionanoconjugates and Biopolymers ‘’Petru Poni’’,
Institute of Macromolecular Chemistry, Iasi, Romania
4
Laboratoire de Photonique et Nanostructures, CNRS, UPR 20, Route de Nozay, F-91460

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Marcoussis, France
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Faculty of Physics, Alexandru Ioan Cuza University of Iasi, Iasi, Romania
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Faculty of Applied Chemistry and Material Science, National Research Center for Food
Safety, Polytechnic University of Bucharest, Bucharest, Romania
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Abstract
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We present the effects of AlGaAs alloy composition on InAlAs quantum dots (QDs)
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optical and structural properties. Photoluminescence (PL) analysis of samples having a variety
of aluminium composition values covering type-II transitions clearly in QDs showed the
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presence of two transitions X-Sh and X-Ph. High-resolution X-ray diffraction (HRXRD)
investigations showed that the layers grew epitaxially on the GaAs substrate, with no
relaxation regardless the Al content of AlGaAs layer. From the reciprocal space map (RSM)
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investigation around (004) and (115) diffraction peaks, it was shown that the InAlAs layer is
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fully strained, the in-plane lattice parameters (a and b, a=b) being identical to those of GaAs
substrate, while the c lattice parameter was dependent on the In and Al concentrations, being
larger than that of the substrate. High-resolution transmission electronic microscopy
(HRTEM) investigations confirmed that films grew epitaxially on the GaAs substrate with no
visible dislocations or other major defects within the InAlAs/GaAlAs QDs structure.
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Keywords:

Quantum dots, high-resolution X-ray diffraction, Raman spectroscopy, reciprocal space map
*Corresponding author. Tel: +216 23 642 756; fax: +216 71 746 551
E-mail address: amenibendaly@gmail.com

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I- Introduction

A high density of self-assembled quantum dots (QDs) were obtained using the spontaneous

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islanding of highly strained III-V semiconductors grown with standard epitaxy. Visible
emission has been obtained with red-emitting AlInAs QDs in AlGaAs barriers. One of the

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type-II quantum dots (QDs) obtained through the Stranski-Krastanov growth mode with
conduction states localized in the barrier band gap, is AlxIn1-xAs deposited on another material

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with a different lattice parameter, e.g., AlyGa1-yAs. AlInAs is a III-V semiconductor, which
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has the zinc blende crystal structure. The lattice parameter of AlxGa1-xAs can be written as

  = 5.656 + 0.00809 in units of  at 300K [1]. The (004) reflections of InxAl1-xAs
(x=0.1 to 0.86) QDs, which ultimately combined with the In0.83Ga0.17As are located for Cu Kα
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radiation in the 2theta range of 65.5-65.9° [2]. However, AlAs has a larger lattice parameter
than GaAs, thus thin AlAs films epitaxially deposited on GaAs substrates are compressively
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strained. GaAs and InAs are direct-gap semiconductors, while AlxGa1-xAs has a direct
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bandgap for  < 0.46 , and an indirect one for higher aluminium composition [3]. The
maxima of the uppermost (heavy and light holes) valence bands of all III-V semiconductors
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are situated at the Γ point; however, there are three conduction band minima (at the Γ, L and
X points). The relative arrangement of these minima determines the nature of the bandgap.
When the bottom of the conduction band is located at the Γ point, the semiconductor has a
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direct bandgap, while when the lowest minima in the conduction band is near the X point, the
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semiconductor has an indirect bandgap; in this case, optical transitions across the gap must be
assisted by phonons to satisfy the requirement of momentum conservation [4]. The optical
properties of semiconductors are greatly influenced by the formation of excitons. An exciton
is an electron-hole pair in which the Coulomb attraction between the electron and the hole
correlates their motion. Type-II QDs can be divided in two categories. The first one includes a
system that confines the electrons inside the QD, e.g., the InP/GaAs dots [5, 6]. In second
category, only the holes are confined within the dot, whilst electrons are located in the barrier
such as GaSb/GaAs [7]. Samples with varying aluminum composition in the barrier material
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were grown to study the type-I to type-II transitions by pushing up the quantum confined
states of QDs above the AlGaAs conduction X band.

In this paper, photoluminescence (PL) and Raman spectroscopy are used as powerful tools to
study the optical properties in self-assembled type-II QD structures. These structures, are
potentially attractive for device applications such as memories [8] and spin-qubit [9] because
of characteristics that arise from their specific band alignment [10, 11]. High resolution X-ray

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diffraction scans (HRXRD) and reciprocal space mapping (RSM) have been recently
established as useful techniques for strain and structural characterization of epilayers and

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heterostructures [12-15]. They have the advantage of being non-destructive, probing large
sample area, and yielding high precise strain and composition values. High-resolution

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transmission electronic microscopy (HRTEM) and scanning transmission electron microscopy
(STEM) investigations were performed on these samples to confirm that the layers grew

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epitaxially, in perfect registry with the underlying GaAs substrate [16-17].
Here we use HRXRD, HRTEM, low-temperature PL and Raman spectroscopy to analyze how
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the variations of the aluminium composition in the barrier contributes towards the optical and
structural properties and the growth of QDs type-II.
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2- Experimental procedures
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The QD samples of the present study were prepared by molecular-beam epitaxy. The growth
of the Al0.55In0.45As QDs was performed on a 200 nm-thick AlxGa1-xAs epilayer, at about 560
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°C and were monitored by reflection high-energy electron diffraction (RHEED); the QDs
were covered by an AlxGa1-xAs epilayer of the same composition and 10 nm thickness. All the
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heterostructures have been grown in the same conditions: temperature (560 °C), growth rate
(0.69 ML/s), QD Al composition and deposited amount of AlInAs (6.5 monolayers). Fig. 1
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presents a sketch of the sample structure. The aluminium proportion x in the deposited
AlxGa1-xAs alloy ranges from 0.40 to 0.81: sample A has the lowest aluminium proportion
(nominal x=0.40); sample B, with nominal x=0.50; sample C, with nominal x=0.57; finally,
sample D has the highest nominal x=0.81.
The critical thickness, at which the growth of In0.55Al0.45As layer turns from two-dimensional
to three-dimensional, was detected on the RHEED pattern and measured during the growth
process to be around 5 to 6 monolayers. During the Raman measurement, the sample was
positioned in a clean room and the temperature was fixed at 295 K. A 633 nm He-Ne with 17
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mW of power was used and focused on the sample in a 2 µm-diameter spot; the signal was
detected by a Ren Cam CCD. HRXRD studies were performed with an Empyrean instrument
(Panalytical). For high-resolution ω-2θ curves, the instrument was set up to work in a parallel
beam geometry with a hybrid in the incident beam (mirror and a 4-bounce Ge monochromator
providing monochromatic Cu Kα1 radiation) and a 1 mm slit and an open proportional
detector in the diffracted beam. RSM around GaAs (004) and (115) diffraction peaks were

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recorded with a triple axis geometry for the diffracted beam side (a channel cut 3-bounce Ge
monochromator in front of the detector). The results were analyzed using the Epitaxy

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software package from Panalytical. For the PL measurement, the sample was immersed in
superfluid liquid helium, in a cryostat with optical windows. A 405 nm laser diode, with 1

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mW power, was used and focused on the sample in a 100 µm-diameter spot. The resulting PL
emission was collected by a lens, dispersed by a monochromator, and detected by a liquid-
nitrogen-cooled CCD. Transmission electron microscopy (TEM) is the well-known and

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widely used method for studying QDs. TEM is employed to obtain information on QD size
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and ordering, as well as nanostructure contours [18]. The TEM data were acquired using two
microscopes, a double corrected (DCOR probe corrector and CETCOR image corrector) 60
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kV-300 kV Titan Themis, equipped with a high brightness field emission gun (XFEG) tip
with monochromator and a four diode Super X-ray energy dispersive spectroscopy (X EDS)
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detector (Thermo Fisher Scientific, former FEI) and a Titan Themis image corrected with
high brightness XFEG tip and a four diode Super-X EDS detector (University Politechnica
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from Bucharest).

Thin samples for TEM investigation were prepared using a Helios Dual Beam instrument.
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The samples were milled automatically till a thickness of about 1 µm then lifted out to a TEM
grid. The specimens were further thinned to a thickness of about 150 nm at 30 keV with low
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current. The specimens were then cleaned of debris at 5, 2 and finally 1 keV. The accelarating
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voltage used for TEM investigations was 200 kV.

3- Results and discussion

The PL spectra of the samples obtained at low temperature (T=6K) are shown in Fig. 2.
Curves 2(a), 2(b), 2(c) and 2(d) concern the x=0.40, 0.50, 0.57 and 0.81 samples, respectively.
The broad PL signal comes from optical transitions within the Al0.55In0.45As QDs. The results
show the existence in the QD of the two indirect type-II transitions: X-Sh and X-Ph and are
similar to previously studied samples [19]. The lowest states belong to X valleys and the
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heavy-hole (HH) ground state energies come of symmetries S and P. The X-Sh transition
observed at lower energies systematically measured at 1.926 eV. In curve 2(a), such a X-Ph
signal is observed at 1.94 eV and possesses a full width at half maximum (FWHM) of 60.7
meV. In curve 2(b), this PL maximum is observed at 1.961 eV, and the FWHM is 65 meV. In
curve 2(c), the maximum of the X-Ph signal is located at 1.944 eV, and the corresponding
FWHM is 69.5 meV. In curve 2(d), the high-energy signal is centered at 1.950 eV with a

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FWHM of 74.6 meV. The energy shift of the X-Ph emission from sample A (x=0.40) to
sample B (x=0.50) (from 1.943 to 1.961 eV) and sample C (x=0.57) to sample D (x=0.81)

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(from 1.944 to 1.950 eV) essentially comes from the rising of the quantum-confined states in
QDs with the increase of the Γ-valleys of both conduction and valence bands of AlGaAs

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barrier [20]. The observed blue-shift means there is a spatial separation between holes in the
InAlAs QDs and electrons in the AlGaAs barriers. These results are consistent with the
theoretical calculation results of the band energy structure of the InAlAs/GaAlAs type-II QD

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[19]. By comparing sample B (x=0.50) to sample C (x=0.57), it was observed that as the
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aluminium proportion was increased, a surprising decrease in energy of the X-Ph transition
was evidenced (from 1.961 eV to 1.944 eV) and was explained by the less intermixing
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between In and Ga atoms during QD growth [20]. The conduction band minimum in QDs
become lower and caused the decrease in the emission PL energy [21]. The line shape of the
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PL spectra also changed and became broader with the increase in Al concentration. For all
compositions, we observed a broad peak, which originates from the inhomogeneous
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distribution of the dot sizes [22]. Curves 2 (b), (c) and (d) show that the spectra measured for
type-II can be fitted with two Gaussian peaks, in order to show the existence of two
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contributions. For type-I (curve 2 (a)), the spectra display three Gaussian peaks associated to
QD optical transitions [19]. As the aluminium composition was increased, the PL signal
broadened (Fig. 3), following the sharp rise of Γ valley energy of the AlxGa1-xAs barriers. For
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high aluminium content composition, the capture process of carriers from the barriers to the
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dots was very efficient. Fig. 4 presents the power dependent PL measurement for sample D
(x=0.81) at low temperature (T=10 K). At low excitation power, the inhomogeneously
broadened ground and excited state levels are observed because of small QD sizes; in fact, a
saturation of the lower energy transitions is combined with the emergence of new emission
peaks originating from the excited state interband radiative transitions. Two peaks are shown
in the spectrum at 1.928 eV and 1.931 eV attributed to the X-Sh and X-Ph transitions
respectively. A regular blueshift of the X-Ph position and an increase in the peak intensity
when the excitation power increases from 0.05 W to 0.22 W, were observed. The blueshift
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may be caused by the band bending interface for high carrier densities, state filling and
redistribution of carriers between different dots of various sizes [23]. Changing the aluminium
composition in the sample leads to intensity redistribution and variation of frequencies of
phonon lines from different QDs structures, which is observed in the Raman spectra. We have
also analyzed the Raman shift of the QD with different aluminium content (see Fig. 5). The
narrow line systematically measured at 382-397 cm-1, is attributed to the longitudinal optical

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(LO) AlGaAs (AlAs-like) phonon of the upper AlGaAs layer [24]. The LO phonon shifts
toward lower wavenumber than saturates for x=0.81. The spectra exhibited also two single
lines at 293.2 and 269.8 cm-1, consistent with the LOAlGaAs (GaAs-like) phonon of the upper

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AlGaAs layers and the scattering LOInAlGaAs (Ga-like) phonons of quaternary In(Ga,Al) As

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compound, which is formed at the interface of the layer containing QD/AlGaAs with low Al
content [25].

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The structure of the samples has been investigated by HRXRD measurements. First, high
resolution ω-2θ scans for the (004) and (115) peaks were acquired from all four samples. Fig.
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6 (a) shows the scans around GaAs (004) peak recorded from the samples. The AlxGa1-xAs
diffraction peaks appear at different 2θ angles for different aluminium composition. For
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sample A (x=0.40), the relative location of the (004) layer peak with respect to the substrate
(004) peak estimated from omega-2theta scan gives a variation in the c lattice parameter of
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0.00604 . For samples B (x=0.50), C (x=0.57) and D (x=0.81), the relative changes in the c
lattice parameters were 0.00740 , 0.00824  and 0.01216 , respectively. The HRXRD
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peaks were narrow and of very-high intensity [26].

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Fig. 6 (b) shows the measured and stimulated HRXRD ω-2θ patterns of the sample B
(x=0.50), which exhibits clear interference oscillations, a characteristic of high crystal quality,
sharp interfaces and a good agreement between measured and stimulated spectra. The red
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curve is the simulation curve, which fits very well with the acquired scan. A lattice constant
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of 5.656  for GaAs was used in the simulation.

The thickness and composition of layers extracted from the model used to simulate the
acquired HRXRD scans as those presented in Fig. 6 were very close to those estimated from
the used growth parameters and also estimated from HRTEM studies. In Fig. 7, a cross-
section TEM image acquired from sample D, which has the highest Al concentration, is
displayed.
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Microstructure observations by HRTEM investigations were performed across the region
containing the In layer. We used HRTEM to observe if defects and dislocations were
generated during the growth of InAlAs/GaAlAs QDs. In Fig. 8 there is a high resolution
image of the area around the QDs. One could observe variations of the contrast in the In
containing layer due to composition inhomogenities. However, the structure is fully epitaxial,
starting from the substrate and also along the layers. There are no dislocations or any other

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extended defects visible even in the sample containing the highest Al content and, therefore,
the highest stress.

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In order to obtain more information on the crystalline structure, layers thicknesses, and
distribution of the InAlAs/AlGaAs QDs, cross-section TEM images were taken for sample B

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(x=0.50) as shown in Fig. 9. The layer of the embedded QDs appears as light contrast in
between the AlGaAs layers. In the image, we can directly measure the thickness of the thin

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QDs layer that is around 4 – 5 nm, corresponding to approximately 7-10 atomic layers.
Microstructure observations by HRSTEM were performed along the region containing the In
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layer, from which one can clearly see “triangular” shaped In islands. The triangle is in fact the
projection of a pyramidal shape on a 2D surface. It was previously observed [27] that the base
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sides of the pyramids are oriented along [100] and [010], and the side facets are close to
[011]. In addition, the typical base length is around 12 nm, with a height of 6 nm, very similar
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to the dimensions of the pyramid seen in Fig. 9. Also, because of the Stranski-Krastanov
growth mode, the dots reside on a continuous wetting layer whose thickness l was estimated
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from Fig. 9 to be around 5-6 monolayers, in excellent agreement with the RHEED results. To
check the chemical composition of the AlGaAs layers, EDX qualitative and quantitative
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measurements were made in the regions described as 1 and 2 in Fig. 9 (a). The results are
shown in Figs 9 (d) and (e), the quantitative data being presented in Table 1. The data show
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that the quantitative analysis measurements are in accordance with the experimental
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procedure.

Reciprocal space-mapping (RSM) measurements were performed around GaAs (115) and
(004) peaks to study the relaxation process. Fig. 10 (a) and (b) show the RSMs for the (115)
peaks for samples A (x=0.40) and D (x=0.81), which have the lowest and highest Al
concentration, respectively.

The peaks intensities were plot in a nonlinear scale to reduce the background noise. In the
RSMs, the relatively predominant peak corresponding to the GaAs substrate (denoted as S)
and the lower intensity peak belonging to the AlxGa1-xAs layer (denoted as L) are marked.
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One could immediately see that the peaks are aligned vertically at the same Qx axis value,
which implies that the in-plane lattice parameters are identical, no relaxation being present
[28]. Their relative position along the Qy axis to that of the GaAs was dependent on the
aluminium content in the layer, being larger for sample D (x=0.81) than for sample A
(x=0.40).

The AlxGa1-xAs layer is almost fully strained with a lattice mismatch around 4% relative to

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the AlGaAs. From the GaAs (115) peak (Fig. 10 (a)), the Qx position of the layer is identical
to that of the substrate indicating no parallel mismatch. It appears that the InAlAs layer is

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fully strained, the in plane lattice parameters (a and b, a=b) being identical to those of the
GaAs substrate. On the other way, the AlxGa1-xAs layer has a different c lattice, which is

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larger than that of the substrate.

4- Conclusion
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We have studied the structural and optical properties in self-assembled In0.45Al0.55As/Ga1-
xAlxAs QDs, for different compositions x. From the PL measurement, were deduced several
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quantum-confined states, related to indirect transitions, and depending on the inhomogeneous

QDs distribution. The influence of phonons was evidenced in QD sample. HRXRD was
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performed to determine the QDs strain. RSMs acquired for (004) peak regions revealed that
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the layers were fully strained, having the same in plane lattice parameters as the substrate,
while the out of plane lattice parameters were dependent on the Al content and larger than the
in plane ones.
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Acknowledgements

The authors thanks Dr. Chengge Jiao from Thermo Fisher Scientific, Materials & Structural
Analysis, European NanoPort, Achtseweg Noord 5, 5651 GG Eindhoven, The Netherlands for
the FIB sample preparation, Project No. 638/12.03.2014, SMIS-CSNR code 48652 and
Project NUCLEU-INFLPR.
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CAPTIONS

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FIG. 1. Structure of the studied samples. The amount of deposited AlxGa1-xAs alloy and the

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Al proportion x differ from sample to sample.
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FIG. 2. Low-temperature (6K) PL spectra of the studied samples. (a) Sample A, x=0.40; (b)
Sample B, x=0.50; (c) Sample C, x=0.57; (d) Sample D, x=0.81.
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FIG. 3. Central energy E (full circles, left vertical axis) and FWHM (full squares, right axis)
of the high-energy PL signal shown by the studied samples (see Fig. 2); the horizontal axis
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represents the aluminium composition of deposited AlxGa1-xAs.

FIG. 4. 10K-PL spectra taken at different excitation powers for sample D (x=0.81).
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FIG. 5. Raman spectra of the studied samples obtained at 295K.

FIG. 6. (a) High-resolution ω-2θ scans around GaAs (004) peak recorded from the studied
samples. (b) ω-2θ high-resolution scan around GaAs (004) peak acquired for sample B
(x=0.50) (blue trace); and its simulation using the Epitaxy software from Panalytical (red
trace).
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FIG. 7. TEM cross section image of sample D (x=0.81). The thicknesses of the layers are also
indicated on the image, including the Pt capping layer used to protect the structure during FIB
preparation.

FIG. 8. High resolution TEM image of the interface with the substrate and the AlInAs QDs
region acquired from the D samples (x=0.81).

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FIG. 9. (a) TEM image of the grown structure; 1 and 2 are the areas where the energy
dispersive X-ray analysis (EDAX) was performed, (b) inhomogeneous In composition in the

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InAlAs layer, (c) faceted, prismatic, high In concentration region, (d) EDAX spectra acquired
in the red boxes; the results are shown in Table 1.

U
AN
FIG. 10. Reciprocal space map around the GaAs (115) peak required from samples A
(x=0.40) (a) and D (x=0.81) (b) respectively ; the peaks corresponding to substrate (S),
M

AlxGa1-xAs (L) and several thickness fringes are marked on the reciprocal space map.
D

Table. 1. The energy dispersive X-ray (EDX) table compositional results of areas indicated on
TE

Fig. 10.
C EP
AC
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PT
RI
U SC
AN
M

GaAs 5 nm
Al0.87Ga0.13As 140 nm
D

AlxGa1-xAs 10 nm
TE

In0.55Al0.45As
AlxGa1-xAs 200 nm
EP

AlAs 20 nm
GaAs
C

buffer+
AC

substrate

FIG. 1. Structure of the studied samples. The amount of deposited AlxGa1-xAs alloy and the
Al proportion x differ from sample to sample.
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T
IP
CR
US
AN
M
C E (arb. unit)

x=0.81
ED

(d)
PT

x=0.57
(c)
PL intensity
AC

x=0.50 (b)

x=0.40 (a)

1.8 1.9 2.0

Energy (eV)
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FIG. 2. Low-temperature (6K) PL spectra of the studied samples. (a) Sample A, x=0.40; (b)
Sample B, x=0.50; (c) Sample C, x=0.57; (d) Sample D, x=0.81.

PT
RI
U SC
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Full width at half maximum (meV)

M

76
1.960
D

72
1.956
TE
Energy (eV)

1.952 68
EP

1.948 64
C

1.944
AC

60
0.4 0.6 0.8
Aluminium composition
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FIG. 3. Central energy E (full circles, left vertical axis) and FWHM (full squares, right axis)
of the high-energy PL signal shown by the studied samples (see Fig. 2); the horizontal axis
represents the aluminium composition of deposited AlxGa1-xAs.

PT
RI
U SC
AN
M
PL intensity (arb. unit)

X-Ph 0.05W
Sample D
TE

0.06W
(x=0.81) X-Sh 0.08W
0.09W
EP

0.11W
0.13W
0.17W
C

0.19W
0.22W
AC

1.91 1.92 1.93 1.94 1.95

Energy (eV)
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FIG. 4. 10K-PL spectra taken at different excitation powers for sample D (x=0.81).

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M
D
TE

x=0.57
Intensity (arb. unit)

EP

x=0.50
C

x=0.40
AC

x=0.81

0 400 800 1200

Raman shift (cm-1)
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FIG. 5. Raman spectra of the studied samples obtained at 295K.

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counts/s
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1M
M

100K
D

10K
TE

x=0.81 x=0.57
1K x=0.40
x=0.50
EP

100
-1500 -1000 -500 0 500 1000
Omega/2Theta (s)
C
AC
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counts/s
1M

100K

10K

PT
1K

100

RI
-1500 -1000 -500 0 500
Omega/2Theta (s)

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FIG. 6. (a) High-resolution ω-2θ scans around GaAs (004) peak recorded from the studied
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samples. (b) ω-2θ high-resolution scan around GaAs (004) peak acquired for sample B
(x=0.50) (blue trace); and its simulation using the Epitaxy software from Panalytical (red
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trace).
D
TE
C EP
AC
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RI
U SC
AN
M
D

FIG. 7. TEM cross section image of sample D (x=0.81). The thicknesses of the layers are also
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indicated on the image, including the Pt capping layer used to protect the structure during FIB
preparation.
C EP
AC
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PT
RI
U SC
AN
M
D
TE

FIG. 8. High resolution TEM image of the interface with the substrate and the AlInAs QDs
region acquired from the D samples (x=0.81).
C EP
AC
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1 2

PT
RI
SC
(a)

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AN
M
D
TE
EP
C
AC

(b)
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AN (c)
M
D
TE
EP

(d)
C
AC

FIG. 9. (a) TEM image of the grown structure; 1 and 2 are the areas where the energy
dispersive X-ray analysis (EDAX) was performed, (b) inhomogeneous In composition in the
InAlAs layer, (c) faceted, prismatic, high In concentration region, (d) EDAX spectra acquired
in the red boxes; the results are shown in Table 1.
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Z 10.449
15.0
25.0
Qy*10000(rlu)
50.0
6840 75.0
100.0
6830 200.0
300.0
6820 400.0

S 500.0
6810

PT
L 750.0
1000.0
6800 1250.0
2500.0
6790 5000.0

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10000.0
6780 15000.0
25000.0
1914 1916 1918 1920 1922 1924 1926

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50000.0
Qx*10000(rlu) 75000.0
100000.0

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Z 10.346
15.0
25.0
Qy*10000(rlu)
50.0
M

6840 75.0
100.0
6830 200.0
300.0
D

6820 400.0
S 500.0

6810 750.0
TE

1000.0
L 1250.0
6800
2500.0
5000.0
6790
7500.0
EP

10000.0
6780 15000.0
25000.0

1922 1924 1926 1928 1930 1932 1934 50000.0

Qx*10000(rlu)
C

75000.0
100000.0
AC

FIG. 10. Reciprocal space map around the GaAs (115) peak required from samples A
(x=0.40) (a) and D (x=0.81) (b) respectively ; the peaks corresponding to substrate (S),
AlxGa1-xAs (L) and several thickness fringes are marked on the reciprocal space map.
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PT
Elements

RI
U SC
AN
M

Table. 1. The energy dispersive X-ray (EDX) table compositional results of areas indicated on
Fig. 10.
D
TE
C EP
AC
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Highlights

* Photoluminescence, Raman spectroscopy, the reciprocal space map, high-resolution X-ray

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diffraction and high-resolution transmission electron microscopy investigations studies have been
performed on a visible-emitting InAlAs/GaAlAs quantum dot (QD) sample.

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* Samples having a variety of aluminium composition ration clearly covering type-II transitions
showed two transitions X-Sh and X-Ph.

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* High-resolution X-ray diffraction was performed to determine the QDs strain.

* High-resolution transmission electron microscopy investigations confirmed that films grew

epitaxially on the GaAs substrate with no visible dislocations or other major defects within the

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InAlAs/GaAlAs QDs structure.

AN
M
D
TE
C EP
AC