IGBT

Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode

IKP40N65H5,IKW40N65H5
650VDuoPackIGBTanddiode
Highspeedswitchingseriesfifthgeneration

Datasheet

IndustrialPowerControl
 IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration

Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode

FeaturesandBenefits: C

HighspeedH5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage G
•LowgatechargeQG E
•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/ 1
2
3

Applications:

•Solarconverters
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters

Packagepindefinition:

•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IKP40N65H5 650V 40A 1.65V 175°C K40EH5 PG-TO220-3
IKW40N65H5 650V 40A 1.65V 175°C K40EH5 PG-TO247-3

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TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing PG-TO220-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Package Drawing PG-TO247-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

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MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value Unit

Collector-emittervoltage,Tvj≥25°C VCE 650 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C IC 74.0 A
TC=100°C 46.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 120.0 A
Turn off safe operating area
- 120.0 A
VCE≤650V,Tvj≤175°C,tp=1µs
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C IF 36.0 A
TC=100°C 21.0
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A
Gate-emitter voltage ±20
VGE V
TransientGate-emittervoltage(tp≤10µs,D<0.010) ±30
PowerdissipationTC=25°C 250.0
Ptot W
PowerdissipationTC=100°C 125.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s PG-TO220-3 260 °C
PG-TO247-3 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3

ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
Rth(j-c) 0.60 K/W
junction - case
Diode thermal resistance,
Rth(j-c) 1.80 K/W
junction - case
Thermal resistance PG-TO220-3 62
Rth(j-a) K/W
junction - ambient PG-TO247-3 40

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ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V
VGE=15.0V,IC=40.0A
Tvj=25°C - 1.65 2.10
Collector-emitter saturation voltage VCEsat V
Tvj=125°C - 1.85 -
Tvj=175°C - 1.95 -
VGE=0V,IF=20.0A
Tvj=25°C - 1.45 1.80
Diode forward voltage VF V
Tvj=125°C - 1.40 -
Tvj=175°C - 1.40 -
Gate-emitter threshold voltage VGE(th) IC=0.40mA,VCE=VGE 3.2 4.0 4.8 V
VCE=650V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 40.0 µA
Tvj=175°C - - 4000.0
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=40.0A - 50.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 2500 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 50 - pF
Reverse transfer capacitance Cres - 9 -
VCC=520V,IC=40.0A,
Gate charge QG - 95.0 - nC
VGE=15V
Internal emitter inductance
PG-TO220-3 7.0
measured 5mm (0.197 in.) from LE - - nH
PG-TO247-3 13.0
case

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) Tvj=25°C, - 22 - ns
Rise time tr VCC=400V,IC=20.0A, - 12 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=15.0Ω,RG(off)=15.0Ω, - 165 - ns
Fall time tf Lσ=30nH,Cσ=30pF - 13 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.39 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.12 - mJ
Total switching energy Ets - 0.51 - mJ

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Highspeedswitchingseriesfifthgeneration

Turn-on delay time td(on) Tvj=25°C, - 19 - ns

Rise time tr VCC=400V,IC=5.0A, - 4 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=15.0Ω,RG(off)=15.0Ω, - 190 - ns
Fall time tf Lσ=30nH,Cσ=30pF - 24 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.09 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.05 - mJ
Total switching energy Ets - 0.14 - mJ

DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr Tvj=25°C, - 62 - ns
Diode reverse recovery charge Qrr VR=400V, - 0.45 - µC
IF=20.0A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs - 12.5 - A
Diode peak rate of fall of reverse
dirr/dt - -290 - A/µs
recoverycurrentduringtb

Diode reverse recovery time trr Tvj=25°C, - 30 - ns

Diode reverse recovery charge Qrr VR=400V, - 0.22 - µC
IF=5.0A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs - 10.7 - A
Diode peak rate of fall of reverse
dirr/dt - -700 - A/µs
recoverycurrentduringtb

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=150°C
Turn-on delay time td(on) Tvj=150°C, - 20 - ns
Rise time tr VCC=400V,IC=20.0A, - 12 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=15.0Ω,RG(off)=15.0Ω, - 195 - ns
Fall time tf Lσ=30nH,Cσ=30pF - 22 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.54 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.22 - mJ
Total switching energy Ets - 0.76 - mJ

Turn-on delay time td(on) Tvj=150°C, - 19 - ns

Rise time tr VCC=400V,IC=5.0A, - 5 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=15.0Ω,RG(off)=15.0Ω, - 240 - ns
Fall time tf Lσ=30nH,Cσ=30pF - 33 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.15 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.07 - mJ
Total switching energy Ets - 0.22 - mJ

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Highspeedswitchingseriesfifthgeneration

DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time trr Tvj=150°C, - 90 - ns
Diode reverse recovery charge Qrr VR=400V, - 1.00 - µC
IF=20.0A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs - 17.5 - A
Diode peak rate of fall of reverse
dirr/dt - -220 - A/µs
recoverycurrentduringtb

Diode reverse recovery time trr Tvj=150°C, - 52 - ns

Diode reverse recovery charge Qrr VR=400V, - 0.49 - µC
IF=5.0A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs - 15.0 - A
Diode peak rate of fall of reverse
dirr/dt - -430 - A/µs
recoverycurrentduringtb

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275

100 250

225
IC,COLLECTORCURRENT[A]

Ptot,POWERDISSIPATION[W]
200

175
10
tp=1µs
150
10µs
125
50µs

100µs 100
1 200µs
75
500µs
50
DC
25

0.1 0
1 10 100 1000 25 50 75 100 125 150 175
VCE,COLLECTOR-EMITTERVOLTAGE[V] TC,CASETEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea Figure 2. Powerdissipationasafunctionofcase
(D=0,TC=25°C,Tvj≤175°C;VGE=15V. temperature
RecommendeduseatVGE≥7.5V) (Tvj≤175°C)

80 120

70
100
VGE=20V
60
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]

18V
80
50 15V

12V

40 60 10V

8V
30
40 7V

6V
20
5V
20
10

0 0
25 50 75 100 125 150 175 0 1 2 3 4 5
TC,CASETEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase Figure 4. Typicaloutputcharacteristic
temperature (Tvj=25°C)
(VGE≥15V,Tvj≤175°C)

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Highspeedswitchingseriesfifthgeneration

120 120
Tj=25°C
Tj=150°C

100 100
VGE=20V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
18V
80 80
15V

12V

60 10V 60

8V

40 7V 40
6V

5V
20 20

0 0
0 1 2 3 4 5 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
VCE,COLLECTOR-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaltransfercharacteristic
(Tvj=150°C) (VCE=20V)

2.50 1000
IC=10A td(off)
IC=20A tf
2.25 IC=40A td(on)
VCEsat,COLLECTOR-EMITTERSATURATION[V]

tr

2.00
t,SWITCHINGTIMES[ns]

100
1.75

1.50

1.25
10

1.00

0.75

0.50 1
0 25 50 75 100 125 150 175 0 20 40 60 80 100 120
Tvj,JUNCTIONTEMPERATURE[°C] IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature collectorcurrent
(VGE=15V) (inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=15Ω,Dynamictestcircuitin
Figure E)
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Highspeedswitchingseriesfifthgeneration

1000 1000
td(off) td(off)
tf tf
td(on) td(on)
tr tr
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
100 100

10 10

1 1
5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175
rG,GATERESISTOR[Ω] Tvj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typicalswitchingtimesasafunctionofgate Figure 10. Typicalswitchingtimesasafunctionof
resistor junctiontemperature
(inductiveload,Tvj=150°C,VCE=400V, (inductiveload,VCE=400V,VGE=15/0V,
VGE=15/0V,IC=20A,Dynamictestcircuitin IC=20A,rG=15Ω,Dynamictestcircuitin
Figure E) Figure E)

5.5 8
typ. Eoff
min. Eon
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

5.0 max. 7 Ets

E,SWITCHINGENERGYLOSSES[mJ]

4.5
6

4.0
5

3.5
4
3.0

3
2.5

2
2.0

1.5 1

1.0 0
0 25 50 75 100 125 150 0 20 40 60 80 100 120
Tvj,JUNCTIONTEMPERATURE[°C] IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction Figure 12. Typicalswitchingenergylossesasa
ofjunctiontemperature functionofcollectorcurrent
(IC=0.4mA) (inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=15Ω,Dynamictestcircuitin
Figure E)
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Highspeedswitchingseriesfifthgeneration

1.6 0.8
Eoff Eoff
Eon Eon
1.4 Ets 0.7 Ets
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
1.2 0.6

1.0 0.5

0.8 0.4

0.6 0.3

0.4 0.2

0.2 0.1

0.0 0.0
5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175
rG,GATERESISTOR[Ω] Tvj,JUNCTIONTEMPERATURE[°C]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor functionofjunctiontemperature
(inductiveload,Tvj=150°C,VCE=400V, (inductiveload,VCE=400V,VGE=15/0V,
VGE=15/0V,IC=20A,Dynamictestcircuitin IC=20A,rG=15Ω,Dynamictestcircuitin
Figure E) Figure E)

1.0 16
Eoff 130V
Eon 520V
0.9
Ets 14
E,SWITCHINGENERGYLOSSES[mJ]

0.8
VGE,GATE-EMITTERVOLTAGE[V]

12
0.7

10
0.6

0.5 8

0.4
6

0.3
4
0.2

2
0.1

0.0 0
200 250 300 350 400 450 500 0 20 40 60 80 100
VCE,COLLECTOR-EMITTERVOLTAGE[V] QGE,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalgatecharge
functionofcollectoremittervoltage (IC=40A)
(inductiveload,Tvj=150°C,VGE=15/0V,
IC=20A,rG=15Ω,Dynamictestcircuitin
Figure E)
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Highspeedswitchingseriesfifthgeneration

1E+4 1
Cies
Coes

Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
Cres

D=0.5
1000
0.2
C,CAPACITANCE[pF]

0.1 0.1
0.05
0.02

100 0.01
single pulse

0.01

10

i: 1 2 3 4
ri[K/W]: 0.08245484 0.144197 0.2151774 0.1581708
τi[s]: 7.3E-5 7.0E-4 0.01235548 0.08020881

1 0.001
0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
VCE,COLLECTOR-EMITTERVOLTAGE[V] tp,PULSEWIDTH[s]
Figure 17. Typicalcapacitanceasafunctionof Figure 18. IGBTtransientthermalresistance
collector-emittervoltage (D=tp/T)
(VGE=0V,f=1MHz)

130
Tj=25°C, IF = 20A
1 Tj=150°C, IF = 20A
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]

120
trr,REVERSERECOVERYTIME[ns]

D=0.5 110
0.2
0.1 100
0.1 0.05
0.02 90
0.01
single pulse 80

70
0.01

60

50
i: 1 2 3
ri[K/W]: 0.6701584 0.775759 0.3540826
τi[s]: 3.4E-4 4.7E-3 0.04680901

0.001 40
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 500 700 900 1100 1300 1500
tp,PULSEWIDTH[s] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 19. Diodetransientthermalimpedanceasa Figure 20. Typicalreverserecoverytimeasafunction
functionofpulsewidth ofdiodecurrentslope
(D=tp/T) (VR=400V)

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1.2 20
Tj=25°C, IF = 20A Tj=25°C, IF = 20A
Tj=150°C, IF = 20A 19 Tj=150°C, IF = 20A
18
Qrr,REVERSERECOVERYCHARGE[µC]

Irr,REVERSERECOVERYCURRENT[A]
1.0 17

16

15

0.8 14

13

12

0.6 11

10

0.4 8

0.2 5
500 700 900 1100 1300 1500 500 700 900 1100 1300 1500
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 21. Typicalreverserecoverychargeasa Figure 22. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope functionofdiodecurrentslope
(VR=400V) (VR=400V)

0 60
Tj=25°C, IF = 20A Tj=25°C
Tj=150°C, IF = 20A Tj=150°C
-50
50
dIrr/dt,diodepeakrateoffallofIrr[A/µs]

-100
IF,FORWARDCURRENT[A]

40
-150

-200 30

-250
20

-300

10
-350

-400 0
500 700 900 1100 1300 1500 0.0 0.5 1.0 1.5 2.0 2.5 3.0
diF/dt,DIODECURRENTSLOPE[A/µs] VF,FORWARDVOLTAGE[V]
Figure 23. Typicaldiodepeakrateoffallofreverse Figure 24. Typicaldiodeforwardcurrentasafunction
recoverycurrentasafunctionofdiode offorwardvoltage
currentslope
(VR=400V)
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2.0
IF=10A
IF=20A
IF=40A
1.8
VF,FORWARDVOLTAGE[V]

1.6

1.4

1.2

1.0

0.8
25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 25. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature

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Highspeedswitchingseriesfifthgeneration

Package Drawing PG-TO220-3

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Highspeedswitchingseriesfifthgeneration

Package Drawing PG-TO247-3

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Highspeedswitchingseriesfifthgeneration

Testing Conditions

VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b

a b
10% VGE
t

IC(t) Qa Qb

dI

90% IC
90% IC

10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)

td(off) tf td(on) tr
t

Figure A.
VGE(t)
90% VGE
Figure D.

10% VGE
t

IC(t)

CC

2% IC
t

VCE(t) Figure E. Dynamic test circuit

Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t
t1 t2 t3 t4

Figure B.

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RevisionHistory
IKP40N65H5, IKW40N65H5

Revision:2015-05-06,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2012-11-09 Preliminary data sheet
1.2 2013-12-18 New Marking Pattern
1.3 2014-12-04 Minor changes Fig.1, Fig.14 and typ. Eoff at 150°C = 0.22mJ
2.1 2015-05-06 Final data sheet

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Publishedby
InfineonTechnologiesAG
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81726München,Germany
©2015InfineonTechnologiesAG
AllRightsReserved.

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Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain
and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe
endangered.

18 Rev.2.1,2015-05-06