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Infineon BSC600N25NS3G - DS v02 - 04 en PDF
Infineon BSC600N25NS3G - DS v02 - 04 en PDF
OptiMOSTM3 Power-Transistor
Product Summary
Features
VDS 250 V
• N-channel, normal level
RDS(on),max 60 mW
• Excellent gate charge x R DS(on) product (FOM)
ID 25 A
• Very low on-resistance R DS(on)
Type BSC600N25NS3 G
Package PG-TDSON-8
Marking 600N25NS
T C=100 °C 16
1)
J-STD20 and JESD22
2)
See figure 3
Thermal characteristics
Static characteristics
V DS=200 V, V GS=0 V,
Zero gate voltage drain current I DSS - 0.1 1 µA
T j=25 °C
V DS=200 V, V GS=0 V,
- 10 100
T j=125 °C
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Dynamic characteristics
Fall time tf - 8 -
Reverse Diode
V GS=0 V, I F=25 A,
Diode forward voltage V SD - 0.9 1.2 V
T j=25 °C
4)
See figure 16 for gate charge parameter definition
140 30
120
100
20
80
Ptot [W]
ID [A]
60
10
40
20
0 0
0 50 100 150 200 0 50 100 150 200
TC [°C] TC [°C]
103
1 µs
102
10 µs
100
100 µs
ZthJC [K/W]
0.5
ID [A]
101 1 ms
0.2
0.1
10 ms 10-1 0.05
0.02
100
DC
0.01
single pulse
10-1 10-2
10-1 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100
VDS [V] tp [s]
60 100
10 V
7V
50
80
5V
4.5 V
40 5V
RDS(on) [mW]
60
7V
ID [A]
30
10 V
40
20 4.5 V
20
10
0 0
0 1 2 3 4 5 0 10 20 30
VDS [V] ID [A]
50 80
70
40
60
50
30
gfs [S]
ID [A]
40
20
30
20
150 °C
10
10
25 °C
0 0
0 2 4 6 8 0 10 20 30 40 50
VGS [V] ID [A]
180 4
160
3.5
140 900 µA
3
120 90 µA
2.5
RDS(on) [mW]
VGS(th) [V]
100
2
80 98%
1.5
60
typ
1
40
20 0.5
0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
Tj [°C] Tj [°C]
104 103
Ciss
103
102
Coss
25 °C
C [pF]
IF [A]
102 150 °C
25°C, 98%
101
Crss
101 150°C, 98%
100
0 40 80 120 160 0 0.5 1 1.5 2
VDS [V] VSD [V]
100 10
200 V
25 °C 125 V
6
VGS [V]
IAS [A]
10 50 V
100 °C
4
125 °C
1 0
1 10 100 1000 0 5 10 15 20 25
tAV [µs] Qgate [nC]
280
V GS
Qg
270
260
VBR(DSS) [V]
250
V gs(th)
240
230
Q g(th) Q sw Q gate
220 Q gs Q gd
-60 -20 20 60 100 140 180
Tj [°C]
PG-TDSON-8: Outline
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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