Semiconductor

Physics &
Devices

E. M. K. Ikball Ahamed
Department of EEE, CUET
Book Ref:
 Band Theory

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 E-K Diagram

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 Fermi Energy
The function fF(E) is called the Fermi–Dirac distribution or
probability function and gives the probability that a quantum state
at the energy E will be occupied by an electron.
The energy EF is called the Fermi energy. Another interpretation of
the distribution function is that fF(E) is the ratio of filied to total
quantum states at any energy E.
the Fermi energy level is located near the center of the forbidden
bandgap for the intrinsic semiconductor

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 Quasi Fermi Energy Level
Band to band
transition_
Interband
Transition

tinterband<< tintraband

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 Intrinsic & Extrinsic Semiconductor
• For an intrinsic semiconductor, the concentration of electrons in
the conduction band is equal to the concentration of holes in the
valence band.
• The intrinsic semiconductor may be an interesting material, but
the real power of semiconductors is realized by adding small,
controlled amounts of specific dopant, or impurity, atoms.

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 Intrinsic & Extrinsic Semiconductor
The phosphorus atom without the donor electron is positively charged.
At very low temperatures, the donor electron is bound to the
phosphorus atom. However, by intuition, it should seem clear that the
energy required to elevate the donor electron into the conduction band
is considerably less than that for the electrons involved in the covalent
bonding.

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 Intrinsic & Extrinsic Semiconductor

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 Intrinsic & Extrinsic Semiconductor
If an electron were to occupy this “empty” position,
its energy would have to be greater than that of the valence
electrons, since the net charge state of the boron atom would now
be negative.

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 Semiconductor Materials
II-B III-A IV-A V-A VI-A
Elemental Semiconductor
----- B C N O Binary Sc.: III-V / II-VI

----- Al Si P S

Zn Ga Ge As Se

Cd In Sn Sb Te

Hg Ti Pb Bi Po

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 Bandgap Values
Sc Eg (eV) Sc Eg (eV)-
Indirect Direct
Ge 0.66 GaAs 1.42
Si 1.12 InP 1.35
AlSb 1.58 InSb 0.17
AlAs 2 .16 InAs 0.36
GaP 2 .26 GaSb 0.73
AlP 2 . 45 AlN 6.2
SiC 2 . 42 GaN 3.39

InN 0.65

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 Importance of Bandgap
hν = E2-E1=Eg
E2
𝒉𝒄 𝟏.𝟐𝟒 (𝒆𝑽)
Eg = =
𝝀 𝝀 (𝝁𝒎) hν
Eg hν

E1

** Bandgap determines the optical properties

of a semiconductor

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 Compound Semiconductor
Ternary Compound:

Ga
AlxGa1-xAs x=alloy composition
and 0 ≤ x ≤ 1
As
x=0 GaAs (1.42 eV)
x=1 AlAs (2.16 eV)
Al

Quarternary Compound:
2 elements from gp. III + 2 elements
from gp. V
In1- x Gax Asy P1- y
Inx Ga1- x As1-y Py

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 Why Ternary & Quaternary Compounds??

Bandgap
Modification &
Enable formation of
lattice matched
heterostructures for
Semiconductor
devices

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 BIG CONCEPT

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 Bandgap Modification

*Giovanni_Ghione
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 Bandgap Modification
Indirect Bandgap
Eg(eV)
▪ AlxGa1-xAs Direct Bandgap
3

2.5

1.5

0.5
x
0.2 0.4 0.6 0.8 1.0
GaAs AlAs

Direct Bandgap
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 Lattice Matched Growth of Heterostructure

Heterostructures are structures where we grow

semiconductors of different types on a substrate
Lattice matched  junction is free from defect (aL1=aL2)

L2

interface

L1

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 Trap States

E2

Etrap
hν
hν
Etrap

E1

In Optoelectronic Device, we want radiatve transition. So, the

interface must be Lattice matched or defect free. Defects contribute
to non-radiative transitions By carrier trapping !!!
20 *Umesh_Mishra
 important alloys in the lattice constant–energy gap plane

*Giovanni_Ghione
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 THANKS!
Any questions?
You can find me at:
https://sites.google.com/site/ikbalab1116/
Email: ikballahmed@gmail.com, ikballahamed@cuet.ac.bd

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