PD - 97518

IRF9328PbF
HEXFET® Power MOSFET

VDS -30 V
6   '
RDS(on) max
11.9 mΩ 6   '
(@VGS = -10V)
RDS(on) max 6   '
19.7 mΩ
(@VGS = -4.5V) *   '
Qg (typical) 18 nC SO-8
ID
-12 A
(@TA = 25°C)

Applications
• Charge and Discharge Switch for Notebook PC Battery Application

Features and Benefits

Features Resulting Benefits

Industry-Standard SO8 Package Multi-Vendor Compatibility

RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier

Orderable part number Package Type Standard Pack Note

Form Quantity
IRF9328PbF SO8 Tube/Bulk 95
IRF9328TRPbF SO8 Tape and Reel 4000

Absolute Maxim um Ratings

Parameter Max. Units
V DS Drain-to-S ource Voltage -30
V
V GS Gate-to-Source Voltage ± 20
I D @ TA = 25°C Conti nuous Drain Current, VGS @ 10V -12
I D @ TA = 70°C Conti nuous Drain Current, VGS @ 10V -9.6 A
I DM Pul sed Drain Current c -96
P D @TA = 25°C Power Dissipation f 2.5
W
P D @TA = 70°C Power Dissipation f 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Juncti on and -55 to + 150
°C
T STG Storage Temperature Range

Notes  through † are on page 2

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IRF9328PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250μA
ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) ––– 10 11.9 VGS = -10V, ID = -12A e
Static Drain-to-Source On-Resistance
––– 16.1 19.7
mΩ
VGS = -4.5V, ID = -9.6A e
VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 V
VDS = VGS, ID = -25μA
ΔVGS(th) Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– -1.0 VDS = -24V, VGS = 0V
μA
––– ––– -150 VDS = -24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
gfs Forward Transconductance 20 ––– ––– S VDS = -10V, ID = -9.6A
Qg Total Gate Charge h ––– 18 ––– nC VDS = -15V, VGS = -4.5V, ID = - 9.6A
Qg Total Gate Charge h ––– 35 52 VGS = -10V
Qgs Gate-to-Source Charge h ––– 5.3 ––– nC VDS = -15V
Qgd Gate-to-Drain Charge h ––– 8.5 ––– ID = -9.6A
RG Gate Resistance h ––– 15 ––– Ω
td(on) Turn-On Delay Time ––– 19 ––– VDD = -15V, VGS = -4.5V e
tr Rise Time ––– 57 ––– ID = -1.0A
ns
td(off) Turn-Off Delay Time ––– 80 ––– RG = 6.8Ω
tf Fall Time ––– 66 ––– See Figs. 20a &20b
Ciss Input Capacitance ––– 1680 ––– VGS = 0V
Coss Output Capacitance ––– 350 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 220 ––– ƒ = 1.0kHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy d ––– 120 mJ
IAR Avalanche Current c ––– -9.6 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D
––– ––– -2.5
(Body Diode) showing the
A G
ISM Pulsed Source Current integral reverse
––– ––– -96
(Body Diode) c p-n junction diode.
S

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V e
trr Reverse Recovery Time ––– 51 76 ns TJ = 25°C, IF = -2.5A, VDD = -24V
Qrr Reverse Recovery Charge ––– 35 53 nC di/dt = 100A/μs e
Thermal Resistance
Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead g ––– 20
°C/W
RθJA Junction-to-Ambient f ––– 50

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 2.6mH, RG = 25Ω, IAS = -9.6A.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
… Rθ is measured at TJ of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.

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 IRF9328PbF
-ID, Drain-to-Source Current (A) 100 100

-ID, Drain-to-Source Current (A)

10
VGS VGS
TOP -10V 10 TOP -10V
-5.0V -5.0V
-4.5V -4.5V
-4.0V -4.0V
1 -3.5V -3.5V
-3.0V -3.0V
-2.8V -2.8V
BOTTOM -2.5V 1 BOTTOM -2.5V
-2.5V
0.1

-2.5V
≤60μs PULSE WIDTH ≤60μs PULSE WIDTH
Tj = 25°C Tj = 150°C
0.01 0.1
0.1 1 10 100 0.1 1 10 100
-V DS, Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 1.6
ID = -12A
RDS(on) , Drain-to-Source On Resistance V GS = -10V
-ID, Drain-to-Source Current (A)

1.4
10
TJ = 150°C
1.2
(Normalized)

TJ = 25°C 1.0

0.1

V DS = -10V 0.8
≤ 60μs PULSE WIDTH
0.01
1.0 2.0 3.0 4.0 5.0 6.0 0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
-V GS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

10000 14
VGS = 0V, f = 1 MHZ
C iss = C gs + Cgd, C ds SHORTED
ID= -9.6A
12 V DS= -24V
-V GS, Gate-to-Source Voltage (V)

C rss = C gd
C oss = C ds + Cgd V DS= -15V
10 V DS= -6.0V
C, Capacitance(pF)

Ciss
8
1000 Coss
6

Crss 4

0
100 0 8 16 24 32 40 48
1 10 100
QG Total Gate Charge (nC)
-V DS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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IRF9328PbF
100 1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)

-ID, Drain-to-Source Current (A)

-ISD, Reverse Drain Current (A)

TJ = 150°C 100
10
1msec
10
10msec

1 TJ = 25°C
1
TA = 25°C
Tj = 150°C
V GS = 0V DC
Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 0.1 1 10 100
-V SD, Source-to-Drain Voltage (V) -V DS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area

12 2.5

-V GS(th) , Gate threshold Voltage (V)

10
-ID, Drain Current (A)

8 2.0
ID = -25μA

4 1.5

0 1.0
25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150
TA , Ambient Temperature (°C) TJ , Temperature ( °C )

Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature
Ambient Temperature
100

D = 0.50
Thermal Response ( Z thJA ) °C/W

10 0.20
0.10
0.05
1 0.02
0.01

0.1

0.01 Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthja + TA

0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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50 60

RDS(on), Drain-to -Source On Resistance ( mΩ)

RDS(on), Drain-to -Source On Resistance (m Ω)
ID = -12A
50
40

40
30
30

20 V GS = -4.5V
TJ = 125°C
20

10
10
TJ = 25°C V GS = -10V

0 0
0 5 10 15 20 0 10 20 30 40 50 60
-ID, Drain Current (A)
-V GS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage Fig 13. Typical On-Resistance vs. Drain Current
500 1000
EAS , Single Pulse Avalanche Energy (mJ)

ID
TOP -2.3A
400 -3.3A
Single Pulse Power (W) 800
BOTTOM -9.6A

300 600

200 400

100 200

0 0
25 50 75 100 125 150 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0

Starting TJ , Junction Temperature (°C) Time (sec)

Fig 14. Maximum Avalanche Energy vs. Drain Current Fig 16. Typical Power vs. Time

Driver Gate Drive

P.W.
D.U.T * + P.W.
Period D=
Period

ƒ VGS=10V*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance
D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • di/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Current
Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* Reverse Polarity of D.U.T for P-Channel

* VGS = 5V for Logic Level Devices

Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
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IRF9328PbF

Id
Vds

Vgs

L
VCC
DUT
0
Vgs(th)
1K
SS
20K

Qgodr Qgd Qgs2 Qgs1

Fig 18a. Gate Charge Test Circuit Fig 18b. Gate Charge Waveform

VDS L
I AS

RG D.U.T
VDD
IAS A
-V
-20V
GS DRIVER
tp 0.01Ω

tp
V(BR)DSS
15V

Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms

RD
VDS
td(on) tr t d(off) tf
VGS VGS
D.U.T.
RG
10%
-
+ V DD

-VGS
Pulse Width ≤ 1 µs
90%
Duty Factor ≤ 0.1 % VDS

Fig 20a. Switching Time Test Circuit Fig 20b. Switching Time Waveforms

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 IRF9328PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)

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SO-8 Part Marking Information

(;$03/(7+,6,6$1,5)026)(7
'$7(&2'(<::
3 ',6*1$7(6/($')5((
352'8&7237,21$/
< /$67',*,72)7+(<($5
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/2*2 3$57180%(5

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF9328PbF
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

†
Qualification Information
Consumer ††
Qualification level
(per JEDEC JESD47F††† guidelines)
MSL1
Moisture Sensitivity Level SO-8
(per JEDEC J-STD-020D†††)
RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.5/2010
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