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  • Silicon N Channel Junction Fets: C D E F

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    The document summarizes the specifications and characteristics of the 2SK304 N-channel junction field-effect transistor (JFET). The JFET can be used in applications such as charge sensors, meter amplifiers, rheostats, choppers, and automatic gain controllers. It has a drain-source voltage rating of 30V maximum, a gate-source cutoff voltage between -0.3V and -2.5V, and a saturation drain current between 0.6mA and 12mA. The JFET comes in TO-92 or TO-92s packages and has marking ranks to indicate its saturation drain current classification.

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    The document summarizes the specifications and characteristics of the 2SK304 N-channel junction field-effect transistor (JFET). The JFET can be used in applications such as charge sensors, meter amplifiers, rheostats, choppers, and automatic gain controllers. It has a drain-source voltage rating of 30V maximum, a gate-source cutoff voltage between -0.3V and -2.5V, and a saturation drain current between 0.6mA and 12mA. The JFET comes in TO-92 or TO-92s packages and has marking ranks to indicate its saturation drain current classification.

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    15 views1 page

    Silicon N Channel Junction Fets: C D E F

    Uploaded by

    visolar tracker
    The document summarizes the specifications and characteristics of the 2SK304 N-channel junction field-effect transistor (JFET). The JFET can be used in applications such as charge sensors, meter amplifiers, rheostats, choppers, and automatic gain controllers. It has a drain-source voltage rating of 30V maximum, a gate-source cutoff voltage between -0.3V and -2.5V, and a saturation drain current between 0.6mA and 12mA. The JFET comes in TO-92 or TO-92s packages and has marking ranks to indicate its saturation drain current classification.

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    of 1

    Silicon N Channel Junction FETs 2SK304

    LH03 series of products interconvertible

    2SK304 D Symbol

    S G
    Applications

    For charge sensor, meter amplifier circuit,


    rheostat , chopper and gain controller for AGC, Packag
    electronic switch.

    1-Source 2-Gate 3-Drain

    TO-92 or TO-92s
    Electrical characteristics (Ta=25℃)

    Parameter Symbl Conditions min typ max unit


    Drain to Source Voltage BVDS IDS= 1uA 30 V
    Gate to Drain ( Source) Voltage VGD(S) IGS= -1uA -30 V
    Gate to Source Cut-off Voltage VGS(off) VDS=10V IDS=1uA -0.3 -2.5 V
    Gate to Source Reverse Current IGSS VDS=0VVGS=-20V -1.0 nA
    Saturation Drain Current IDSS VDS=10V VGS=0V 0.6 12 mA
    Forward transfer admittance VDS=10V VGS=0V 2.5 mS
    |Yfs| f=1KHz

    Classifications
    Marking Rank (LH) O Y GR BL
    Marking Rank C D E F
    IDSS Classification (mA ) 0.6~1.5 1.2~3.0 2.5~6.5 6.0~12

    YEAR ：2012

    Ke sai lun Elctronic & Telechnology CO. , LTD


    Tel / Fax :86-0755-82536684/83467862 www.szksl.com Email : sale@szksl.com
    16B zhong hang ge . zhong yin Garden. No . 5015 cai tian . Fu tian . Shen zhen China

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