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TK15A60D: Switching Regulator Applications
TK15A60D: Switching Regulator Applications
TK15A60D: Switching Regulator Applications
TK15A60D
Switching Regulator Applications
Unit: mm
2.7 ± 0.2
Ф3.2 ± 0.2 10 ± 0.3
A
• Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.)
3.9 3.0
• High forward transfer admittance: |Yfs| = 8.5 S (typ.)
15.0 ± 0.3
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
1.14 ± 0.15
2.8 MAX.
13 ± 0.5
Absolute Maximum Ratings (Ta = 25°C) 0.69 ± 0.15
Ф0.2 M A
2.6 ± 0.1
1 2 3
0.64 ± 0.15
Drain-source voltage VDSS 600 V
4.5 ± 0.2
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 15 1: Gate
Drain current A
Pulse (Note 1) IDP 60 2: Drain
3: Source
Drain power dissipation (Tc = 25°C) PD 50 W
Single pulse avalanche energy JEDEC ⎯
EAS 527 mJ
(Note 2)
JEITA SC-67
Avalanche current IAR 15 A
TOSHIBA 2-10U1B
Repetitive avalanche energy (Note 3) EAR 5.0 mJ
Channel temperature Tch 150 °C Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics Symbol Max Unit
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TK15A60D
Electrical Characteristics (Ta = 25°C)
Marking
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
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TK15A60D
ID – VDS ID – VDS
20 40
COMMON SOURCE 10 7.25 COMMON SOURCE 10 8
8 Tc = 25°C
Tc = 25°C
PULSE TEST
PULSE TEST 7.75
(A)
(A)
16 7
30
7.5
DRAIN CURRENT ID
DRAIN CURRENT ID
12 6.75
7.25
20
6.5 7
8
6 10 6.5
4
VGS = 5.5 V VGS = 6 V
0 0
0 2 4 6 8 10 0 10 20 30 40
40 8
DRAIN CURRENT ID
DRAIN-SOURCE VOLTAGE
30 6
ID = 15 A
20 4
25
7.5
10 100 2
3.75
Tc = −55°C
0 0
0 2 4 6 8 10 0 4 8 12 16 20
COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE
VDS = 10 V Tc = 25°C
PULSE TEST PULSE TEST
10
RDS (ON) (Ω)
100 25
⎪Yfs⎪ (S)
Tc = −55°C 1
1
VGS = 10, 15 V
0.1 0.1
0.1 1 10 100 0.1 1 10 100
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TK15A60D
VGS = 10 V Tc = 25°C
1.4
10
RDS (ON) ( Ω)
1.0
IDR (A)
0.8 15
7.5
0.6 10
1
5
ID = 3.75 A
0.4
3
0.2
1 VGS = 0 V
0 0.1
−80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
Ciss
GATE THRESHOLD VOLTAGE
(pF)
4
1000
C
Coss
3
Vth (V)
CAPACITANCE
100
10 COMMON SOURCE
COMMON SOURCE Crss
1 VDS = 10 V
VGS = 0 V ID = 1 mA
f = 1 MHz
PULSE TEST
Tc = 25°C
1 0
0.1 1 10 100 −80 −40 0 40 80 120 160
(V)
DRAIN POWER DISSIPATION
VDS
VGS
400 200 16
60
DRAIN-SOURCE VOLTAGE
GATE-SOURCE VOLTAGE
VDD = 100 V
300 400 12
PD (W)
40
200 8
VGS COMMON SOURCE
ID = 15 A
20
Tc = 25°C 4
100
PULSE TEST
0 0 0
0 40 80 120 160 0 20 40 60 80
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TK15A60D
rth – tw
10
0.2
0.1
0.1
0.05
PDM
0.02
SINGLE PULSE
t
0.01 0.01
T
Duty = t/T
Rth (ch-c) = 2.5 °C/W
0.001
10 μ 100 μ 1m 10 m 100 m 1 10
100 μs *
500
ID max (continuous)
AVALANCHE ENERGY
1 ms *
10
400
(A)
EAS (mJ)
ID
300
1
DC operation
DRAIN CURRENT
Tc = 25°C 200
0.1 100
0
*: SINGLE NONREPETITIVE 25 50 75 100 125 150
0.01 PULSE Tc = 25°C
CURVES MUST BE CHANNEL TEMPERATURE (INITIAL)
DERATED LINEARLY WITH Tch(°C)
INCREASE IN
TEMPERATURE. VDSS max
0.001 BVDSS
1 10 100 1000 15 V
DRAIN-SOURCE VOLTAGE VDS (V) IAR
−15 V
VDD VDS
RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 4.1 mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠
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TK15A60D
6 2010-08-12