Solar photovoltaic system

Introduction
Solar photovoltaic system convert solar energy into electrical energy.
It is also called solar cell.A solar cell is basically an electrical current source.
Solar cell were first produced in 1954.

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 USES
• Space satellites

• Remote radio-communication booster stations

• Marine warning lights

• Lighting

• Water pumping

• Medical refrigeration

• Solar- powered vehicles

• Battery charing
 ADVANTAGES
• It converts solar energy into electrical energy.it has no
moving part.

• Solar photovoltaic system are reliable, modular, durable

and maintenance-free.

• These system are compatible with almost all environments,

and life span of 20 years or more.

• It can be located at the place of use and no distribution

network is required.
 DISADVANTAGES
• Cost are high in comparison of other conventional power
sources.

• The efficiency of solar cells is low, solar radiation is also

low.

• A large area of solar cell are required to generate

sufficient useful power.

• As solar energy is intermittent, and electrical energy is

required, which makes the whole system more expensive.
 Solar cell
• Semiconductor-A semiconductor is an element with electrical properties between
those of a conductor and an insulator . ex - si, ge etc

• At absolute zero temperature ,a semiconductor behave as a perfect insulator, at

higher temperature it behave as a conductor.

• At room temperature ,covalent bond break a free electron-hole pair is

produced.the merging of free electrons a hole is called recombination.

• The time between covalent bond break and recombination is called lifetime.

• In intrinsic semiconductor , the number of free electrons and holes are equal.
When a potential is applied across a semiconductor ,a free electron moves away
from a negatively charged plate until it reaches a positively charged plate and
completes the path through external circuit.
• Valence electron move from the negative to positive plate or hole move inapposite to this.

• Free electron and holes continuously move in opposite direction inside a semiconductor due to which electric current
will flow in the circuit.

• Increase the conductivity of a semiconductor is by adding impurity atoms to intrinsic semiconductor.this process is
called doping. The doped semiconductor is called extrinsic semiconductor.
• Extrinsic semiconductor are two type-1:n-type semiconductor and 2: p-type semiconductor.

• Each radius of an orbit as equivalent to an energy level.

• An electron is attracted by the nucleus, extra energy is needed to lift an electron into a larger
orbit.some of the external energy sources that can lift the electron to higher energy levels are heat
and light.

• When an electron in a valence band receives sufficient energy to overcome energy gap, it jumps to
the next higher band known as conduction band leaving behind a hole in the valence band.

• FERMI LEVEL:-energy state with 50% probability of its filled by charge carriers.

• In intrinsic semiconductor material, the fermi level lies in the centre of the forbidden energy band.

• If a donor-type impurity is added to the pure semiconductor ,the fermi level E(f)moves closer to
the conduction band, if a acceptor -type impurity is added to the pure semiconductor, the fermi
level E(f) moves closer to the valence band.

• If the temperature of An n-type or p-type material is increased, the fermi level moves towards the
centre of the energy gap.
the fermi level of n -type material: E(f)=E©-k t ln (N© /N (d))

• The fermi level of p-type material :E℗ =E(v) +KT ln (N(v) /N(a))
 Pn junction
The junction is formed between p type and n type
material.

• The region is depleted of mobile charges, it is called depletion region, space charge region or transition region .mobile
charge carriers exist only outside the depletion region.
 GENERATION OF ELECTRON-HOLE PAIR BY
PHOTON ABSORPTION
The energy of photon is. E=hv =hc/lambda
• The energy in a photon must exceed the semiconductor
band-gap energy order to get absorbed and generate
an electron -hole pair.

• If a photon has energy much greater than the band gap,

it still produces a single electron hole pair.the remainder
of the photon energy is lost to the material as heat.

• The nature of the band gap- 1:indirect - band gap and 2:

direct band gap
 Photoconduction

• Once an electron-hole pair is generated within the junction both carriers will be acted upon by the built-in electric
field.since the field is directed from n to p side.

• This addition of excess majority charge carriers on each side of the junction results in a voltage across external
terminals of the junction.

• The photon - generated current will flow through this external circuit. Which depends on the intensity of illumination.an,
illuminated p n junction becomes a photovoltaic cell.

• The minority carriers ,generated outside the junction region due to optically generated electron-hole pair .
 Solar cell characteristics
I - V CHARACTERISTICS

• In dark mode the junction is not illuminated. I=I(0) ( e x p (V /V(t)-1)

• When the p n junction is illuminated, then the cha. Shifts downwards as the photon- generated component is added
with reverse leakage current.

• I =. -I(S c) + i(o) (e x p (V/V(t) - 1)

• Now a voltage source is inserted in the external path with positive polarity on the p side.the value of open circuit
voltage at which the current becomes zero is known as open circuit voltage.

• V(oc) = V(t) Ln (( I (s c) / i(o) + 1 )

• THERE IS ONLY ONE POINT AT WHICH IT WILL PRODUCE MAXIMUM POWER UNDER THE INCIDENT
ILLUMINATION LEVEL.

• Other than the maximum power point will mean that the cell will produce a lesser electrical power and more thermal
power.

• An ideal cell would have a perfect rectangular characteristics. Therefore FF. (FILL FACTOR0. ) Indicates that the
quality of cell. FF. =. V(m)I(m)/V(o c) I(s c)

• An ideal cell fill factor of unity.

Solar cell characteristics
I-V characteristic
• The conversion efficiency of solar cell =

• = v(m)I(m)/solar power =FF V(o c)I(s c)/solar power

 EQUIVALENT CIRCUIT

• Practical equivalent circuit-

• We consider in ideal condition the internal series resistance of

the cell as zero and shunt resistance as infinite, and for practical
we consider both values are finite.

• Typically r(s)=.05 to .10 ohms and R(sh)= 200 to 300 ohms.

 Effect of variation of insolation and temperature
The photo- generated current depends directly on insolation.
Therefore, the I(s c) depends linearly while the V(o c) depends

Logarithmically on the insolation.

• Energy losses and efficiency—-losses are due to the

inherent nature of internal physical processes and available
input, and the second due to inherent material properties
and the physical principle on which solar cell operates.

• The total energy losses due to radiation and inherent

properties closed to 65%.

• Efficiency = electrical power output/incident solar power

• MAXIMIZING THE PERFORMANCES—-reduction of series
resistance requires high doping of semiconductor. But high
doping will also decrease the width of depletion layer, which
decrease the photocurrent.

• Cell size—-silicon solar cells can be divided into four group-

1. 100mm diameter, round single crystalline. 2. 100 cm^2
off square single crystalline 3. 100mm x 100mm square multi
crystalline 4. 125mm x 125 mm square multi crystalline

• ENERGY PAYBACK PERIOD—-the length of time during

which a solar cell generates the same amount of energy that it
has consumed during its production is known as energy
payback period.
• The largest solar power plant in the world is
BHADLA solar park.

• India’s solar installed capacity was 35,739MW

as of 31 august 2020.

• The Indian government had target of 100GW

of solar capacity by 2022.

• India has established nearly 42 solar parks to

the promos of solar plant
 Conclusion
• To fulfils the increasing energy demand the
people.

• Saving of land and also eco-friendly.

• This can provide electricity without any power

cut problem.