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Tunable Optoelectronic Properties of Cbd-Cds Thin Films Via Bath Temperature Alterations
Tunable Optoelectronic Properties of Cbd-Cds Thin Films Via Bath Temperature Alterations
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Buddhika Dassanayake
University of Peradeniya
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Abstract
The tunability of the band-gap value and electron affinity of the n-CdS by adjusting the
growth parameters is very important as it paves the way to improve the efficiency of CdS-
based solar cells by adjusting the band lineup with other p-type semiconductors. In this
respect, polycrystalline n-CdS thin films were grown on FTO glass substrates at different
bath temperatures (40–80 °C) by the chemical bath deposition technique. The structural,
morphological and optoelectronic properties of CdS thin films were studied using x-ray
diffraction, scanning electron microscopy, UV-Vis spectrometry, profilometry, atomic
force microscopy, photoelectrochemical and Mott–Schottky measurements. Absorption
measurements reveal that an energy-gap value of n-CdS can be adjusted from 2.27 to 2.57 eV
and Mott–Schottky measurements indicate that the flat-band potential is increased from −699
to −835 V with respect to a Ag/AgCl electrode by decreasing the deposition bath temperature
from 60 to 40 °C. This tunability of optoelectronic properties of n-CdS is very useful for
applications in thin film solar cells and other devices.
2. Experiment
2
J. Phys. D: Appl. Phys. 49 (2016) 095109 W G C Kumarage et al
⎛I ⎞
αd = ln⎜ 0 ⎟ = 2.303 Abs
⎝ IT ⎠
(1)
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J. Phys. D: Appl. Phys. 49 (2016) 095109 W G C Kumarage et al
At low temperature;
Cd2+ + S2− → CdS ↓
(iv)
At higher temperature; the cadmium ions react in the basic
medium as below,
Cd2+ + 2OH− ↔ Cd(OH)2 ↓
(v)
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J. Phys. D: Appl. Phys. 49 (2016) 095109 W G C Kumarage et al
Figure 6. SEM images of CBD-CdS deposited at (a) 40 °C, (b) 50 °C, (c) 60 °C, (d) 70 °C and (e) 80 °C of bath temperature under 100 K
magnification. The scale in samples (a), (c) and (e) is 500 nm while that of (b) and (d) is 200 nm.
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J. Phys. D: Appl. Phys. 49 (2016) 095109 W G C Kumarage et al
Figure 8. (a) Flat-band potential against Ag/AgCl reference with 0.1 M Na2S2O3 electrolyte at room temperature at 1000 Hz with respect to
the CBD-CdS deposition bath temperature, (b) the energy-band diagram of the CdS/electrolyte system.
be at its lowest at 60 °C, while it increased when devi- temperature from 60 to 40 °C, respectively. However, the best
ating away from 60 °C. The highest flat-band potential was power was generated in PECs when the films were grown at
observed for the film fabricated at the bath temperature 80 °C. The carrier concentration of the CdS grown at 80 °C
of 40 °C which has the lowest cluster size as well as the is in the order of 1016 cm−3. In conclusion, our study reveals
lowest film thickness. that optoelectronic properties of CBD n-CdS thin films can be
When the flat-band potential is high, the electric field effectively altered by varying the deposition bath temperature
strength in the space charge region of the semiconductor is which results in tunable flat-band potential (electron affinity),
expected to be high. This can be clearly seen in figures 7(a) Eg, Voc and Isc values, altogether suggesting its suitability for
and 8(a) where both Isc and the flat-band potential have similar fabricating low-cost highly efficient PV devices.
trends with respect to the deposition bath temperature. Even
though films fabricated at 40 °C have the higher flat-band
potential, the highest product of Voc and Isc is shown by the Acknowledgments
films fabricated at a bath temperature of 80 °C with a carrier
Financial assistance from the National Science Foundation
concentration in the order of 1016 cm−3.
(RG/12/BS/03) of Sri Lanka, the support of the Higher Degree
Furthermore, it can be clearly understood from figures 8(a)
Committee of the University of Peradeniya (AC/URF/2014/03)
and (b) that the possibility of altering the conduction band
and Professor S Sivananthanthan of the University of Illinois,
position and hence the flat-band potential of the CdS thin films
Chicago, USA are gratefully acknowledged. Professor M A K
can be manipulated by altering the bath temperature, which
L Dissanayake of the National Institute of Fundamental Stud-
results in a shift of electron affinity of the CdS. The possi-
ies (NIFS), Sri Lanka and Dr M Nandasiri of the the Western
bility of altering the electron affinity of the semiconductor
Michigan University, USA are acknowledged for their valu-
material is of great importance in the energy band lineup in
able suggestions and support.
p-n junction manufacturing since the potential discontinui-
ties (spikes) in the depletion region can be effectively over-
come by engineering of the electron affinity. The tunability of References
electron affinity and energy-gap values of n-CdS by adjusting
the growth condition (bath temperature) will pave the way to [1] Dobson K D, Fisher V, Hodes I G and Cahen D 2000 Sol.
use them in efficient low-cost solar-energy-converting device Energy Mater. Sol. Cells 62 295–325
applications. [2] Oladeji I, Chow L, Ferekides C, Viswanathan W and Zhao Z
2000 Sol. Energy Mater. Sol. Cells 61 203–11
[3] Tomás S A, Vigil O, Alvarado-Gil J J, Lozada-Morales R,
Zelaya-Angel O, Vargas H and Da Silva A F 1995 J. Appl.
4. Conclusions Phys. 78 2204–7
[4] Hegedus S S, McCandless B E and Birkmire R W 2000 Conf.
Polycrystalline CdS was successfully deposited on FTO glass Record 28th IEEE PVSC pp 535–8
[5] Amin N, Isaka T, Okamoto T, Yamada A and Konagai M 1999
substrate by the CBD technique. A variation of the energy-gap
J. Appl. Phys. 38 4666
values from 2.27 to 2.57 eV and the flat-band potential value [6] Samantilleke A P, Cerqueira M F, Heavens S, Warren P,
from −699 to −835 V with respect to Ag/AgCl of n-CdS Dharmadasa I M and Muftah G E A 2011 Thin Solid Films
thin films can be adjusted by changing the deposition bath 519 7583–6
6
J. Phys. D: Appl. Phys. 49 (2016) 095109 W G C Kumarage et al
[7] Erkan M E, Michael H and Jin C 2012 Mater. Chem. Phys. [17] Mahdi M A, Kasem S J, Hassen J J, Swadi A A and A
133 779–83 l-Ani S K J 2009 Int. J. Nanoelectron. Mater. 2 163–72
[8] Kaur I, Pandya D K and Chopra K L 1980 J. Electrochem. [18] Hodes G 2002 Chemical Solution Deposition of
Soc. 127 943–8 Semiconductor Films (New York: Dekker) pp 1–45
[9] Nair M T S, Nair P K and Campos J 1988 Thin Solid Films [19] Hop B X, Trinh H V, Dat K Q and Bao P Q 2008 VNU J. Sci.
161 21–34 Math. Phys. 24 119–23
[10] Wenyi L, Xun C, Qiulong C and Zhibin Z 2005 Mater. Lett. [20] Heo J, Ahn H, Lee R, Han Y and Kim D 2003 Sol. Energy
59 1–5 Mater. Sol. Cells 75 193–201
[11] McGregor S M, Dharmadasa I M, Wadsworth I and Care C M [21] Oliva A I, Solís-Canto O, Castro-Rodríguez R and Quintana P
1996 Opt. Mater. 6 75–81 2001 Thin Solid Films 391 28–35
[12] Metina H and Esen R 2003 J. Cryst. Growth 258 141 [22] Kathirvel D, Suriyanarayanan N and Jeyachitra R 2014 Int.
[13] Das C, Begum J, Begum T and Choudhury S 2013 J. ChemTech Res. 6 3456–66
J. Bangladesh Acad. Sci. 37 83–91 [23] Liu F, Lai Y, Liu J, Wang B, Kuang S, Zhang Z, Li J and Liu Y
[14] Moualkia H, Rekhila G, Izerrouken M, Mahdjoub A and 2010 J. Alloys Compd. 493 305–8
Trari M 2014 Mater. Sci. Semicond. Process. 21 186–93 [24] Haider A J, Mousa A M and Al-Jawad S M H 2008
[15] Jagadale B N 2013 J. Chem. Chem. Sci. 3 7–11 J. Semicond. Technol. Sci. 8 326–32
[16] Moualkia H, Hariech S and Aida M S 2009 Thin Solid Films [25] Gelderman K, Lee L and Donne S W 2007 J. Chem. Educ.
518 1259–62 84 685