SMD Type MOSFET

N-Channel MOSFET
NDT4N20L

SOT-223 Unit:mm

10
6.50±0.2

。
3.00±0.1

■ Features
4
● VDS (V) = 200V
● ID = 1 A (VGS = 10V)

7.0±0.3

3.50±0.2
● RDS(ON) ＜ 1.5Ω (VGS = 10V)
● RDS(ON) ＜ 1.55Ω (VGS = 5V) 1 2 3

● Low gate charge

0.250
2.30 (typ)
Gauge Plane

1.80 (max)
1.Gate
2.Drain
0.02 ~ 0.1
0.70±0.1

4.60 (typ)
3.Source
4.Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol Rating Unit
Drain-Source Voltage VDS 200
V
Gate-Source Voltage VGS ±20
Tc=25℃ 1
Continuous Drain Current ID
Tc=70℃ 0.63
A
Pulsed Drain Current IDM 4
Avalanche Current, Repetetive Or Not Repetetive IAR 1
Power Dissipation Tc=25℃ PD 3.3 W
Single Pulse Avalanche Energy (Note.1) EAS 90 mJ
Peak Diode Recovery Voltage Slope (Note.2) dv/dt 20 V/ns
Thermal Resistance.Junction- to-Ambient (Note.3) RthJA 62.5
℃/W
Thermal Resistance.Junction- to-Case (Note.4) RthJC 38
Junction Temperature TJ 150
℃
Storage Temperature Range Tstg -55 to 150

Note.1:Starting Tj = 25 °C, ID = IAR, VDD = 50 V.

Note.2: Isd ≤ 1 A, di/dt ≤ 200 A/μs, VDD ≤ 80% V(BR)DSS.
Note.3: When mounted on 1 inch² FR-4 board, 2 oz. Cu, (t > 10 sec).
Note.4: When mounted on 1 inch² FR-4 board, 2 oz. Cu, (t < 10 sec).

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 SMD Type MOSFET

N-Channel MOSFET
NDT4N20L
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 200 V
VDS=Max rating, VGS=0V 1
Zero Gate Voltage Drain Current IDSS uA
VDS=Max rating, VGS=0V, TJ=125℃ 50
Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA 1 3 V
VGS=10V, ID=0.5A 1.5
Static Drain-Source On-Resistance RDS(On) Ω
VGS=5V, ID=0.5A 1.55
Input Capacitance Ciss 150
Output Capacitance Coss VGS=0V, VDS=25V, f=1MHz 30 pF
Reverse Transfer Capacitance Crss 4
Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz 5.5 Ω
Total Gate Charge Qg 0.9
Gate Source Charge Qgs VGS=10V, VDS=160V, ID=1A 2.6 nC
Gate Drain Charge Qgd 6.9
Turn-On DelayTime td(on) 3.6
Turn-On Rise Time tr VGS=10V, VDS=100V, ID=0.5A, 2
Turn-Off DelayTime td(off) RG=4.7Ω 10.4 ns
Turn-Off Fall Time tf 15.4
Reverse Recovery Time trr 51
Reverse Recovery Charge Qrr IF= 1A, dI/dt= 100A/μs,VDD=60V 90 nC
Reverse Recovery Current IRRM 3.5 A
Reverse Recovery Time trr 56 ns
IF= 1A, dI/dt= 100A/us,VDD=60V,
Reverse Recovery Charge Qrr 105 nC
TJ=150℃
Reverse Recovery Current IRRM 3.7
Source-Drain Current IS (Note.1) 1 A
Source-Drain Current-Plused ISM (Note.1) 4
Diode Forward Voltage VSD IS=1A,VGS=0V (Note.1) 1.6 V

Note.1: Pulsed: pulse duration = 300 μs, duty cycle 1.5%

■ Marking
Marking 4N20L

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SMD Type MOSFET

N-Channel MOSFET
NDT4N20L
■ Typical Characterisitics
Figure 1. Safe operating area Figure 2. Thermal impedance
ID
(A) Tj=150°C
Tc=25°C
Single pulse
is
RD ea

1
)

10µs
on
ax ar
S(
m is
by in th
ite tion

100µs
Lim era
d
Op

0.1 1ms

10ms

0.01
0.1 1 10 100 VDS(V)

Figure 3. Output characteristics Figure 4. Transfer characteristics

ID ID
(A) (A)
V G S =10V V D S =15V
6 5
5V
5
4
4
4V 3
3
2
2

1
1
3V
0 0
0 10 20 VDS(V) 0 1 2 3 4 5 6 7 8 9 VGS(V)

Figure 5. Normalized B VDSS vs temperature Figure 6. Static drain-source on resistance

BVDSS RDS(on)
(norm) (Ohm)
ID=0.5A VGS=5V
1.11
1.09 1.08
1.07
1.05 1.06

1.03
1.01 1.04 VGS=10V
0.99

0.97 1.02
0.95
0.93 1
-50 -25 0 25 50 75 100 TJ(°C) 0 0.2 0.4 0.6 0.8 1 ID(A)

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 SMD Type MOSFET

N-Channel MOSFET
NDT4N20L
■ Typical Characterisitics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
VGS C
(V) (pF)
VDD=160V VGS
12 300
500
VDS ID=1A
10
400
8 200
300 Ciss
6
200
4 100

100
2
Coss
0 0 0 Crss
0 1 2 3 4 5 6 7 8 Qg(nC) 0 10 20 30 40 50 60 VDS(V)

Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs

vs temperature temperature
VGS(th) RDS(on)
(norm) (norm)

1.10 2.1

1.9

1.00 1.7
1.5

0.90 1.3

1.1

0.80 0.9
.
0.7
0.70 0.5
-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)

Figure 11. Switching times test circuit for Figure 12. Gate charge test circuit
resistive load V DD

12V 47k Ω
1kΩ
100nF
RL 2200 3.3
µF µF
V DD IG =CON S T
VD V i=20V=V GMAX 100 Ω D.U.T.
VGS 2200
RG D.U.T. µF 2.7kΩ VG

PW
47k Ω

PW 1kΩ

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SMD Type MOSFET

N-Channel MOSFET
NDT4N20L
■ Typical Characterisitics

Figure 13. Test circuit for inductive load Figure 14. Unclamped inductive load test
switching and diode recovery times circuit

L
A A A
D

G
FA S T L=100 µH VD
D.U.T. DIODE 2200 3.3
µF µF V DD
S B 3.3 1000
B B µF µF
25Ω V DD ID
D

RG S
Vi D.U.T.

Pw

Figure 15. Unclamped inductive wavefor m Figure 16. Switching time waveform

V (BR)D SS ton toff

tr td off tf
VD td on

90 % 90 %
IDM
10 %
ID 10 % VDS
0

V DD V DD 90 %
VGS

0 10 %

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