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Background and Literatur
Background and Literatur
Background and Literatur
Background and
Literatur
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.2.1Basic principle of Photovoltaic panel
Silicon is a much known semiconductor having properties of both metals and non-metals. To make
a solar panel, this silicon is doped by a pentavalent impurity converting silicon into positive type
silicon also known as p-type silicon. And similarly other part is converted into negative or n-type
silicon.
As name suggest p-type have excess of holes (positive charge) in it and n- type has excessive
electrons. Then these two are combined together one over other up to the atomic level. Due to their
contact and having opposite charge electrons flow from n-type to p-type and holes travel from p-
type to n-type thus creating a thin potential barrier between them.
The current so generated from this movement of charges is named as diffusion current. But we need
to understand yet another thing that is due to this potential barrier, giving rise to electric field which
flows from the positive charge near n-type and negative charge near p-type junction (the area where
potential is generated or meeting area of p and n type). Due to this electric field electrons from p-
type starts flowing to wards n-type and holes from n-type towards p-type giving rise to a current
called drift current. Initially the diffusion current is more than the drift current but as potential
difference increases due to diffusion it simultaneously increases the drift current. Current stops
flowing when drift current becomes equal to diffusion current Sunlight travels to earth in the form
of small energy particles called photons. This photon strike the p- type region and transfer its
energy to hole and electron pair thus exciting the electron and it gets away from hole.
The electric field we have due to potential difference at p-n junction makes its electron to travel to
n-type region thus causing the current to flow But there a bit more to know, to make this electric
field strong enough so that it must travel to n-type region and not recombine with the hole it has
been separated from. To make this electric field strong the n-type and p-type regions are connected
to negative and positive terminals of battery, this process is known as reverse bias condition. Doing
this increases the probability of electron travelling all along the way to n-type region once separated
from a hole. Thus increasing the efficiency of a solar panel .
2.1.1Simple explanation of principle of Photovoltaic panel
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2. Electrons (negatively charged) are knocked loose from their atoms as they are excited. Due to
their special structure and the materials in solar cells, the electrons are only allowed to move in a
single direction. The electronic structure of the materials is very important for the process to
work, and often silicon incorporating small amounts of boron or phosphorus is used in different
layers.
3. An array of solar cells converts solar energy into a usable amount of direct current (DC)
electricity.
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Mono-crystalline Poly-crystalline Flexible amorphous CIGS thin film
Silicon silicon thin film
Figure(2.2). Common PV module technologies
Equivalent circuit of a solar cell 2.3
To understand the electronic behavior of a solar cell, it is useful to create a model which is
electrically equivalent, and is based on discrete ideal electrical components whose behavior is well
defined. An ideal solar cell may be modeled by a current source in parallel with a diode; in practice
no solar cell is ideal, so an shunt resistance and a series resistance component are added to the
model.[1] the table show element define of circuit table(2-1)
I output current (ampere)
IL Photo generated current (ampere)
ID diode current (ampere)
I0 reverse saturation current (ampere)
q elementary charge
k Boltzmann's constant
T absolute temperature
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Fig(2.3): Equivalent circuit of PV module showing the diode and ground leakage currents.
From the equivalent circuit it is evident that the current produced by the solar cell is equal to that
produced by the current source, minus that which flows through the diode, minus that which flows
through the shunt resistor:
I =I −ID−Ish[2]
The current through these elements is governed by the voltage across them:
Vj=V + IRs
By the Shockley diode equation, the current diverted through the diode is:
VJ
} [3]
−1
nVT
ID=Io {e
By Ohm's law, the current diverted through the shunt resistor is:
VJ
Ish=
Rsh
Substituting these into the first equation produces the characteristic equation of a solar cell, which
relates solar cell parameters to the output current and voltage:
An alternative derivation produces an equation similar in appearance, but with V on the left-hand
side. The two alternatives are identities; that is, they yield precisely the same results.
Since the parameters I0, n, RS, and RSH cannot be measured directly, the most common application of
the characteristic equation is nonlinear regression to extract the values of these parameters on the
basis of their combined effect on solar cell behavior.
When RS is not zero, the above equation does not give the current I directly, but it can then be
solved using the Lambert W function:
When an external load is used with the cell, its resistance can simply be added to RS and V set to
zero in order to find the current.
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When RSH is infinite there is a solution for V for any I less than(IL+IO)
However, when RSH is large it's better to solve the original equation numerically.
TK
9520.0
tV ≈ tV =
the thermal voltage. At 25 °C
q
Similarly, when the cell is operated at short circuit, V = 0 and the current I through the terminals is
defined as the short-circuit current. It can be shown that for a high-quality solar cell (low RS and I0,
and high RSH) the short-circuit current ISC is:
The amount of photo generated current IL increases slightly with increasing temperature because of
an increase in the number of thermally generated carriers in the cell. This effect is slight, however:
about 0.065%/°C for crystalline silicon cells and 0.09% for amorphous silicon cells.
The overall effect of temperature on cell efficiency can be computed using these factors in
combination with the characteristic equation. However, since the change in voltage is much
stronger than the change in current, the overall effect on efficiency tends to be similar to that on
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voltage. Most crystalline silicon solar cells decline in efficiency by 0.50%/°C and most amorphous
cells decline by 0.15-0.25%/°C. The figure above shows I-V curves that might typically be seen for
a crystalline silicon solar cell at various temperatures.
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greater than input voltage [5], [12]. Controller will control the switch for turn-on and turn-off to
boost the input voltage to the needed value of output voltage. When the switch is turn-on, the diode
will be in reversed bias and electrical energy will be stored in the inductor. Thus, the capacitor will
supply current to the load. When the switch is turn-off, the stored electrical energy in the inductor
will be transferred to the capacitor and load. The DC-DC boost converters have two type of
operation which is continuous-conduction mode (CCM) and discontinuous-conduction mode
(DCM). When the DC-DC boost converter operates in CCM, the inductor current will be greater
than zero at all-time whereas during DCM, the inductor current will drop to zero after each
switching cycle [4], [10], [13]. Current research trends for DC-DC boost converter with PV based
power quality management are reported for harmonic elimination, power factor correction, zero
voltage regulation and load balancing [14 -15].
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for water supply in rural areas [18], solar battery charger [19, 20], MPPT tracking for grid-
connected [21] and off-grid PV system [22].
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Figure(2.7). Circuit topology of DC-DC buck-boost converter [1]
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tracking maximum power point (MPP) of the PV array irrespective of ambient temperature, solar
irradiance, and load condition. Its integration with solar PV sytem is the best practice to improve
solar PV system performance. However, the drawbacks of this topology are less efficient and
costlier than other topologies [21], [39].
2.7 Chose type of converter to use.
I will chose in this project the buck-boost converter because it has some benefit on other types of
converter because it can work to increase or decrease the input voltage by independent on the value
of the duty cycle
And the voltage generated on the photo voltaic have range of change dependent on the temperature
and irradiation .
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Figure(2.9). buck boost converter Equivalent circuit for the switch open
The two operating states of a buck–boost converter: When the switch is turned on, the input voltage source supplies
current to the inductor, and the capacitor supplies current to the resistor (output load). When the switch is opened, the
inductor supplies current to the load via the diode D.
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IL inductor current
D duty cycle
Vo Output voltage
L inductor
I av Average value
ID Diode current
Is Switch current
VD Diode voltage
Vc Capacitor voltage
Fs Switch frequency
Table(2-2)
Continuous mode
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If the current through the inductor L never falls to zero during a commutation cycle, the converter is
said to operate in continuous mode. The current and voltage waveforms in an ideal converter can be
seen in Figure.(2.10)
Fig (2.10): Waveforms of current and voltage in a buck–boost converter operating in continuous mode.
From t=0 TTT t=0to t=D T, the converter is in On-State, so the switch S is closed. The rate of
change in the inductor current (IL) is therefore given by
D is the duty cycle. It represents the fraction of the commutation period T during which the switch
is On. Therefore D ranges between 0 (S is never on) and 1 (S is always on).
During the Off-state, the switch S is open, so the inductor current flows through the load. If we
assume zero voltage drop in the diode, and a capacitor large enough for its voltage to remain
constant, the evolution of IL is:
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Therefore, the variation of IL during the Off-period is
As we consider that the converter operates in steady-state conditions, the amount of energy stored in
each of its components has to be the same at the beginning and at the end of a commutation cycle.
As the energy in an inductor is given by:
it is obvious that the value of IL at the end of the Off state must be the same with the value of IL at
the beginning of the On-state, i.e. the sum of the variations of IL during the on and the off states
must be zero:
……………………….(2.1)
From the above expression it can be seen that the polarity of the output
voltage is always negative (because the duty cycle goes from 0 to 1), and that its absolute value
increases with D, theoretically up to minus infinity when D approaches 1. Apart from the polarity,
this converter is either step-up (a boost converter) or step-down (a buck converter). Thus it is named
a buck–boost converter
2.9.2Discontinuous mode
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In some cases, the amount of energy required by the load is small enough to be transferred in a time
smaller than the whole commutation period. In this case, the current through the inductor falls to
zero during part of the period. The only difference in the principle described above is that the
inductor is completely discharged at the end of the commutation cycle (see waveforms in figure
(2.11)). Although slight, the difference has a strong effect on the output voltage equation. It can be
calculated as follows:
Fig (2.11): Waveforms of current and voltage in a buck–boost converter operating in discontinuous mode
Because the inductor current at the beginning of the cycle is zero, its maximum value Ilmax (at
t=DT )is:
The load current Io is equal to the average diode current (ID iii). As can be seen on figure 4, the
diode current is equal to the inductor current during the off-state. Therefore, the output current can
be written as:
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Replacing I Ilmaxand δ by their respective expressions yields:
VL=VS
IC(ON)=IO
At the second state when the switch is off the period of time from (DT-T)
VL(OFF)-V0=0
VL(OFF)=VO
IC(OFF)=-(IL+IO)
The ampere at sec balance will equal
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-IODT-(IL+IC)(1-D)T=0
−IO
IL= …………..(2.2)
(1−D)
The ripple current of the inductor equal:
VL(ON)=VS
DVs
∆Is= ………………(2.3)
fL
Ic(on)=-Io
dVc
c =−Io
dt
Vmin DT
Io
∫ dVc=∫ dt
Vmax 0 c
DIo
∆ Vc=
fC
D
Ripple (r)= ……………(2.4)
RCf
Icmin=0
∆ Il
Il− =0
2
−Vo −Io 1 DVs DVs
= = ( )=
R (1−D) 1−D 2 FLc R(1−D)2
R (1−D)
Lc= …………………(2.5)
2F
Vcmin=0
∆ Vc
Vo− =o
2
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∆ Vc
Vo=
2
1 DIo
Vo= ( ) by subtract the value of Io
2 FC
1 DVo
Vo= ( )
2 FCR
D
C= ………….(2.6)
2 FR
The value of the time period is:
1
T = ………(2.7)
fs
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[13] L. Palma, M. H. Todorovic, P. Enjeti. Design Considerations for a Fuel Cell Powered DC-DC
Converter for Portable Applications. in Twenty-First Annual IEEE Applied Power Electronics
Conference and Exposition (APEC ’06). 2006;1263–1268.
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Energy Systems (ICPEICES). 2016; 1–5.
[17] A. Rachid, F. Kerrour, R. Chenni, H. Djeghloud. PV Emulator Based Buck Converter using
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