FGH40N60SFD 600V, 40A Field Stop IGBT

July 2008

FGH40N60SFD tm
600V, 40A Field Stop IGBT
Features General Description
• High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
• Low saturation voltage: VCE(sat) =2.3V @ IC = 40A ries of Field Stop IGBTs offer the optimum performance for
• High input impedance Induction Heating, UPS, SMPS and PFC applications where
low conduction and switching losses are essential.
• Fast switching
• RoHS compliant

Applications
• Induction Heating, UPS, SMPS, PFC

E C
C
G

COLLECTOR
(FLANGE) E

Absolute Maximum Ratings

Symbol Description Ratings Units
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ± 20 V
Collector Current @ TC = 25oC 80 A
IC
Collector Current @ TC = 100oC 40 A
ICM (1) Pulsed Collector Current o
@ TC = 25 C 120 A
Maximum Power Dissipation @ TC = 25oC 290 W
PD
o
Maximum Power Dissipation @ TC = 100 C 116 W
o
TJ Operating Junction Temperature -55 to +150 C
o
Tstg Storage Temperature Range -55 to +150 C
Maximum Lead Temp. for soldering o
TL 300 C
Purposes, 1/8” from case for 5 seconds

Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Units
o
RθJC(IGBT) Thermal Resistance, Junction to Case - 0.43 C/W
o
RθJC(Diode) Thermal Resistance, Junction to Case - 1.45 C/W
oC/W
RθJA Thermal Resistance, Junction to Ambient - 40

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH40N60SFD Rev.C
 FGH40N60SFD 600V, 40A Field Stop IGBT
Package Marking and Ordering Information
Max Qty
Packaging
Device Marking Device Package Type Qty per Tube per Box
FGH40N60SFD FGH40N60SFDTU TO-247 Tube 30ea -

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - V
∆BVCES Temperature Coefficient of Breakdown
∆TJ Voltage
VGE = 0V, IC = 250µA - 0.6 - V/oC

ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA

IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250µA, VCE = VGE 4.0 5.0 6.5 V
IC = 40A, VGE = 15V - 2.3 2.9 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 40A, VGE = 15V,
- 2.5 - V
TC = 125oC

Dynamic Characteristics
Cies Input Capacitance - 2110 - pF
Coes Output Capacitance VCE = 30V, VGE = 0V, - 200 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 60 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 25 - ns
tr Rise Time - 42 - ns
td(off) Turn-Off Delay Time VCC = 400V, IC = 40A, - 115 - ns
tf Fall Time RG = 10Ω, VGE = 15V, - 27 54 ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 1.13 - mJ
Eoff Turn-Off Switching Loss - 0.31 - mJ
Ets Total Switching Loss - 1.44 - mJ
td(on) Turn-On Delay Time - 24 - ns
tr Rise Time - 43 - ns
td(off) Turn-Off Delay Time VCC = 400V, IC = 40A, - 120 - ns
tf Fall Time RG = 10Ω, VGE = 15V, - 30 - ns
Inductive Load, TC = 125oC
Eon Turn-On Switching Loss - 1.14 - mJ
Eoff Turn-Off Switching Loss - 0.48 - mJ
Ets Total Switching Loss - 1.62 - mJ
Qg Total Gate Charge - 120 - nC
Qge Gate to Emitter Charge VCE = 400V, IC = 40A, - 14 - nC
VGE = 15V
Qgc Gate to Collector Charge - 58 - nC

FGH40N60SFD Rev. C 2 www.fairchildsemi.com

 FGH40N60SFD 600V, 40A Field Stop IGBT
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Units

TC = 25oC - 1.95 2.6
VFM Diode Forward Voltage IF = 20A V
TC = 125oC - 1.85 -
TC = 25oC - 45 -
trr Diode Reverse Recovery Time ns
TC = 125oC - 140 -
IES =20A, dIES/dt = 200A/µs
TC = 25oC - 75 -
Qrr Diode Reverse Recovery Charge nC
o
TC = 125 C - 375 -

FGH40N60SFD Rev.C 3 www.fairchildsemi.com

 FGH40N60SFD 600V, 40A Field Stop IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

120 120
o o
TC = 25 C TC = 125 C
20V
20V 15V
100 15V 100 12V
Collector Current, IC [A]

Collector Current, IC [A]

80 80
12V

60 60

10V
40 40
10V
20 20
VGE = 8V VGE = 8V
0 0
0.0 1.5 3.0 4.5 6.0 0.0 1.5 3.0 4.5 6.0
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics
80 120
Common Emitter Common Emitter
VCE = 20V
VGE = 15V
o
o TC = 25 C
Collector Current, IC [A]

TC = 25 C
Collector Current, IC [A]

60 o TC = 125 C
o
TC = 125 C
80

40

40
20

0 0
0 1 2 3 4 6 8 10 12 13
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
4.0 20
Common Emitter Common Emitter
VGE = 15V o
Collector-Emitter Voltage, VCE [V]

Collector-Emitter Voltage, VCE [V]

TC = -40 C
3.5
80A 16

3.0
12
2.5
40A
8
2.0
80A
IC = 20A 40A
1.5 4
IC = 20A

1.0 0
25 50 75 100 125 4 8 12 16 20
o
Collector-EmitterCase Temperature, TC [ C] Gate-Emitter Voltage, VGE [V]

FGH40N60SFD Rev. C 4 www.fairchildsemi.com

 FGH40N60SFD 600V, 40A Field Stop IGBT
Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
o o
Collector-Emitter Voltage, VCE [V]

TC = 25 C TC = 125 C

Collector-Emitter Voltage, VCE [V]

16 16

12 12

8 8

80A 40A
40A 80A
4 4
IC = 20A
IC = 20A

0 0
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics

5000 15
Common Emitter Common Emitter
VGE = 0V, f = 1MHz o
TC = 25 C
Gate-Emitter Voltage, VGE [V]

o
4000 Ciss TC = 25 C 12
200V
Capacitance [pF]

Vcc = 100V 300V

3000 9

Coss
2000 6

1000 3
Crss

0 0
0.1 1 10 30 0 50 100 150
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]

Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.

Gate Resistance
400 200

100 10µs
100
Collector Current, Ic [A]

Switching Time [ns]

10 100µs

1ms
tr
10 ms
1
DC
Single Nonrepetitive Common Emitter
VCC = 400V, VGE = 15V
Pulse TC = 25oC td(on)
0.1 IC = 40A
Curves must be derated o
linearly with increase TC = 25 C
in temperature o
TC = 125 C
0.01 10
1 10 100 1000 0 10 20 30 40 50
Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [Ω]

FGH40N60SFD Rev. C 5 www.fairchildsemi.com

 FGH40N60SFD 600V, 40A Field Stop IGBT
Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
5500 500
Common Emitter Common Emitter
VCC = 400V, VGE = 15V VGE = 15V, RG = 10Ω
o
IC = 40A TC = 25 C
o o
1000 TC = 25 C TC = 125 C

Switching Time [ns]

Switching Time [ns]

o tr
TC = 125 C
td(off) 100

100
td(on)
tf

10 10
0 10 20 30 40 50 20 40 60 80
Gate Resistance, RG [Ω] Collector Current, IC [A]

Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs. Gate Resistance
Collector Current
500 10
Common Emitter Common Emitter
VGE = 15V, RG = 10Ω VCC = 400V, VGE = 15V
o IC = 40A
TC = 25 C
o o
TC = 125 C TC = 25 C
Switching Loss [mJ]
Switching Time [ns]

td(off)
o
TC = 125 C Eon
100

tf
1

Eoff

10 0.2
0.3
20 40 60 80 0 10 20 30 40 50
Collector Current, IC [A] Gate Resistance, RG [Ω]

Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching
SOA Characteristics
30 200
Common Emitter
VGE = 15V, RG = 10Ω 100
10 o
TC = 25 C
Eon
Collector Current, IC [A]

o
TC = 125 C
Switching Loss [mJ]

Eoff
1
10

Safe Operating Area

0.1 o
VGE = 15V, TC = 125 C
1
20 30 40 50 60 70 80 1 10 100 1000
Collector Current, IC [A] Collector-Emitter Voltage, VCE [V]

FGH40N60SFD Rev. C 6 www.fairchildsemi.com

 FGH40N60SFD 600V, 40A Field Stop IGBT
Typical Performance Characteristics

Figure 19. Forward Characteristics Figure 20. Typical Reverse Current vs.
Reverse Voltage
80 200
100
o
TJ = 125 C

Reverse Current , IR [µA]

Forward Current, IF [A]

o
TJ = 125 C 10
10
o
TJ = 25 C o
TJ = 75 C
o 1
TJ = 75 C

o
1 TC = 25 C
0.1
o o
TC = 75 C TJ = 25 C
o
TC = 125 C
0.2 0.01
0 1 2 3 4 50 200 400 600
Forward Voltage, VF [V] Reverse Voltage, VR [V]

Figure 21. Stored Charge Figure 22. Reverse Recovery Time

100 60
Stored Recovery Charge, Qrr [nC]

Reverse Recovery Time, trr [ns]

80 200A/µs
50
di/dt = 100A/µs

60
200A/µs
di/dt = 100A/µs 40
40

20 30
5 10 20 30 40 5 10 20 30 40
Forward Current, IF [A] Forward Current, IF [A]

Figure 23.Transient Thermal Impedance of IGBT

1
Thermal Response [Zthjc]

0.5
0.1 0.2
0.1
0.05
0.02
0.01 0.01 PDM

single pulse t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]

FGH40N60SFD Rev. C 7 www.fairchildsemi.com

 FGH40N60SFD 600V, 40A Field Stop IGBT
Mechanical Dimensions

TO-247AB (FKS PKG CODE 001)

Dimensions in Millimeters

FGH40N60SFD Rev. C 8 www.fairchildsemi.com

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