MBTA42

MBTA42
SILICON EPITAXIAL TRANSISTORS

N-P-N TRANSISTORS

1 3

ABSOLUTE MAXIMUM RATINGS

2
Descriptions Symbol Min. Typ. Max. Unit
Storage Temperature Tstg 55 150 C
Junction Temperature Tj 150 C
Maximum Power Dissipation (Ta=25 C ) Ptot 250 mW 1. BASE
Maximum Collector to Base Voltage VCBO 300 V 3. EMITTER
Maximum Collector to Emitter Voltage VCEO 300 V 2. COLLECTOR
Maximum Emitter to Base Voltage VEBO 6 V
Maximum Collector Current (d.c.) IC 500 mA Type SOT-23
Color Code Black
Marking MBTA42

ELECTRICAL CHARACTERISTICS (Ta 25 C)

Descriptions Test Conditions Symbol Min. Typ. Max. Unit
VCE 10V, I C 1mA h FE1 25
DC Current Gain VCE 10V, I C 10mA h FE2 40
VCE 10V, I C 30mA h FE3 40
Gain Bandwidth product VCE 20V, I C 10mA fT 50 MHz
Feedback Capacitance VCB 20V, I E 0, I e mA, f 1MHz C re PF
Collector Cut-off Current VCB 200V, I E 0mA ICBO 0.1 uA
Emitter Cut-off Current VEB 6V, I C 0 IEBO 0.1 uA
Collector Saturation Voltage I C 20mA, I E 2mA V CE(Sat) 0.5 V
Base Saturation Voltage I C 20mA, I B 2mA V BE(Sat ) 0.9 V
Collector to Base Breakdown Voltage I C 100uA, I E 0 BVCBO 300 V
Collector to Emitter Breakdown Voltage I C 1mA, I B 0 BVCEO 300 V
Emitter to Base Breakdown Voltage I C 0mA, I E 100uA BVEBO 6 V

Pulse Test 300 S, Duty Cycle. 2%

THERMAL CHARACTERISTICS
Descriptions Symbol Min. Typ. Max. Unit
Thermal Resistance at Tj P(Rth j-t +Rth t-s+Rth s-a) +Tamb R th j-a 500 K/W

P/N MBTA42
Marking 1D

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