Power MOSFET

Learning Objectives
1. Junction Structures
2. Principle of Operation
3. V-I characteristics
4. Switching Characteristics
5. Gate drive Circuits
6. Comparison Between BJT and MOSFET
Power MOSFET-Junction Structure
N-channel depletion and enhancement
Depletion Type
type MOSFET
Enhancement Type

Circuit Symbol of Depletion Type Circuit Symbol of Enhancement Type

Basic Structure of n-channel Power
MOSFET
Power MOSFET-Principle of Operation
Junction Structure
Power MOSFET-Junction Capacitances
Power MOSFET-V-I characteristics
 Switching Characteristics

td(ON) = input capacitances charges to gate threshold voltage VGST

tr = gate voltage rises to VGSP , a voltage sufficient to drive the MOSFET in its ON state. During this time, the drain
current rises from zero to full on current. VG
tdf = input capacitances discharges from overdrive gate voltages V1 to VGSP

tf = input capacitances discharges from VGSP to threshold voltage. The drain current falls from ID to zero. VG

When VGS≤ VGST , MOSFET turns off completely

 Power MOSFET-Safe Operating
Area

Region 1: Maximum Permissible Drain Current

Region 2: Maximum Power Dissipation
Region 3. Maximum drain to source Voltage
Gate Drive Circuits
 Different MOSFET Structures
VMOS Structure UMOS Structure
Comparison Between BJT and MOSFET
MOSFET
It is a majority carrier device
Voltage driven device
Gain of the order of 105-106
Negative temperature coefficient of drain
current
No thermal runaway
Less susceptible to secondary breakdown
Input impedance purely capacitance. No
d.c. component required
Parallel combination of switches is
possible with precautions
BJT
It is a minority carrier device
Current controlled device
Gain of the order of 10 - 100
Positive temperature coefficient of Collect
current
Thermal run away
Susceptible to secondary breakdown
Input impedance very low dc component
required
Parallel combination is not possible.
 Applications of MOSFET
MOSFETs are used as either as static switches or
analog operation. Typical Examples are
1. Switched Mode Power Supply (SMPS)
2. Uninterruptible Power Supply (UPS)
3. Brushless DC motor Controllers
Insulated Gate Bipolar Transistor
(IGBT)
IGBT – Junction Structure
IGBT – Cross Section of IGBT
 Basic Structure and Working of IGBT
Cross Sectional View
Circuit Symbol

Equivalent circuit of an IGBT

 IGBT – V-I characteristics
IGBT Biasing Circuit

V-I Characteristics

Transfer Characteristics
 IGBT – Switching Characteristics
Turn on Characteristics
 IGBT – Switching Characteristics
Turn Off Characteristics
 IGBT – Advantages and Ratings
Advantages of IGBT
• Low switching losses
• Small Snubber Circuit
• Lower Gate drive requirements
• Small size and less cost
Present Rating of IGBT
• Voltage rating of 1200V
• Current rating of 500A
 IGBT – Applications of IGBT
• AC and DC motor drives
• UPS systems
• Drives for Solenoids, relays and contactors