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2N2906 2N2906A 2N2907 2N2907A PNP Silicon Transistor Description
2N2906 2N2906A 2N2907 2N2907A PNP Silicon Transistor Description
2N2907 2N2907A w w w. c e n t r a l s e m i . c o m
TO-18 CASE
2N2906 2N2906A
MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N2907 2N2907A UNITS
Collector-Base Voltage VCBO 60 60 V
Collector-Emitter Voltage VCEO 40 60 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 600 mA
Power Dissipation PD 400 mW
Power Dissipation (TC=25°C) PD 1.8 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJA 438 °C/W
Thermal Resistance ΘJC 97 °C/W
R4 (30-January 2012)
2N2906 2N2906A
2N2907 2N2907A
LEAD CODE:
1) Emitter
2) Base
3) Collector
R4 (30-January 2012)
w w w. c e n t r a l s e m i . c o m
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