Power Transistors

2SD2254
Silicon NPN triple diffusion planar type Darlington

For power amplification

Unit: mm
φ 3.3±0.2
Complementary to 2SB1492 20.0±0.5 5.0±0.3
3.0

3.0
6.0
■ Features

4.0
10.0
Optimum for 60W HiFi output

26.0±0.5
●

2.0
● High foward current transfer ratio hFE: 5000 to 30000
● Low collector to emitter saturation voltage VCE(sat): <2.5V

1.5

2.0
1.5

2.0±0.3 1.5

2.5
■ Absolute Maximum Ratings

20.0±0.5

Solder Dip
3.0±0.3 2.7±0.3
(TC=25˚C)
1.0±0.2
Parameter Symbol Ratings Unit 0.6±0.2

Collector to base voltage VCBO 130 V 5.45±0.3

10.9±0.5
Collector to emitter voltage VCEO 110 V
Emitter to base voltage VEBO 5 V 1:Base
2:Collector
Peak collector current ICP 10 A 3:Emitter
1 2 3
TOP–3L Package
Collector current IC 6 A
Collector power TC=25°C 70 Internal Connection
PC W
dissipation Ta=25°C 3.5
C
Junction temperature Tj 150 ˚C
B
Storage temperature Tstg –55 to +150 ˚C
E

■ Electrical Characteristics (TC=25˚C)

Parameter Symbol Conditions min typ max Unit
ICBO VCB = 130V, IE = 0 100 µA
Collector cutoff current
ICEO VCE = 110V, IB = 0 100 µA
Emitter cutoff current IEBO VEB = 5V, IC = 0 100 µA
Collector to emitter voltage VCEO IC = 30mA, IB = 0 110 V
hFE1 VCE = 5V, IC = 1A 2000
Forward current transfer ratio
hFE2* VCE = 5V, IC = 5A 5000 30000
Collector to emitter saturation voltage VCE(sat) IC = 5A, IB = 5mA 2.5 V
Base to emitter saturation voltage VBE(sat) IC = 5A, IB = 5mA 3.0 V
Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz 20 MHz
Turn-on time ton 1.4 µs
IC = 5A, IB1 = 5mA, IB2 = –5mA,
Storage time tstg 4.5 µs
VCC = 50V
Fall time tf 0.8 µs

*h Rank classification
FE2

Rank Q P
hFE2 5000 to 15000 8000 to 30000

1
Power Transistors 2SD2254

PC — Ta IC — VCE VBE(sat) — IC
80 12 100
(1) TC=Ta IC/IB=1000

Base to emitter saturation voltage VBE(sat) (V)

TC=25˚C
(1) (2) With a 100 × 100 × 2mm
Collector power dissipation PC (W)

70 Al heat sink IB=5mA

(3) Without heat sink 10 30
(PC=3.5W)

Collector current IC (A)

60
1mA
8 10
50 0.9mA
0.8mA
0.7mA
40 6 0.6mA 3
0.5mA TC=–25˚C
30
4 0.4mA 1
100˚C 25˚C
20 0.3mA
(2)
2 0.2mA 0.3
10
(3) 0.1mA
0 0 0.1
0 20 40 60 80 100 12 140 160 0 2 4 6 8 10 12 0.1 0.3 1 3 10 30 100
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A)

VCE(sat) — IC hFE — IC Cob — VCB

100 100000 1000
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=1000 VCE=5V IE=0

Collector output capacitance Cob (pF)

f=1MHz
Forward current transfer ratio hFE

30000 TC=25˚C
30 300
10000

10 100
3000 TC=100˚C

3 1000 30
25˚C

300 –25˚C
1 –25˚C 10
25˚C 100
TC=100˚C
0.3 3
30

0.1 10 1
0.1 0.3 1 3 10 30 100 0.01 0.03 0.1 0.3 1 3 10 1 3 10 30 100
Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V)

ton, tstg, tf — IC Area of safe operation (ASO)

100 100
Pulsed tw=1ms Non repetitive pulse
Duty cycle=1% TC=25˚C
30 IC/IB=1000 (IB1=–IB2) 30
VCC=50V
Switching time ton,tstg,tf (µs)

TC=25˚C ICP
Collector current IC (A)

10 10 t=1ms
10ms
tstg IC
3 3 DC
ton
1 1
tf

0.3 0.3

0.1 0.1

0.03 0.03

0.01 0.01
0 4 8 12 16 1 3 10 30 100 300 1000
Collector current IC (A) Collector to emitter voltage VCE (V)

2
Power Transistors 2SD2254

Rth(t) — t
1000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
Thermal resistance Rth(t) (˚C/W)

100

(1)

10
(2)

0.1
10–3 10–2 10–1 1 10 102 103 104
Time t (s)