Power Transistors

2SB1492
Silicon PNP epitaxial planar type Darlington

For power amplification φ 3.3±0.2

Unit: mm

Complementary to 2SD2254 20.0±0.5

3.0
5.0±0.3

3.0
6.0

4.0
■ Features

10.0
26.0±0.5

2.0
● Optimum for 60W HiFi output
● High foward current transfer ratio hFE: 5000 to 30000

1.5

2.0
1.5
● Low collector to emitter saturation voltage VCE(sat): < –2.5V

2.0±0.3 1.5

2.5
■

20.0±0.5

Solder Dip
2.7±0.3
Absolute Maximum Ratings (TC=25˚C) 3.0±0.3

1.0±0.2
Parameter Symbol Ratings Unit 0.6±0.2

Collector to base voltage VCBO –130 V 5.45±0.3

10.9±0.5
Collector to emitter voltage VCEO –110 V
Emitter to base voltage VEBO –5 V 1:Base
2:Collector
Peak collector current ICP –10 A 3:Emitter
1 2 3
Collector current IC –6 A TOP–3L Package

Collector power TC=25°C 70 Internal Connection

PC W
dissipation Ta=25°C 3.5 C
Junction temperature Tj 150 ˚C
B
Storage temperature Tstg –55 to +150 ˚C

E
■ Electrical Characteristics (TC=25˚C)
Parameter Symbol Conditions min typ max Unit
ICBO VCB = –130V, IE = 0 –100 µA
Collector cutoff current
ICEO VCE = –110V, IB = 0 –100 µA
Emitter cutoff current IEBO VEB = –5V, IC = 0 –100 µA
Collector to emitter voltage VCEO IC = –30mA, IB = 0 –110 V
hFE1 VCE = –5V, IC = –1A 2000
Forward current transfer ratio
hFE2* VCE = –5V, IC = –5A 5000 30000
Collector to emitter saturation voltage VCE(sat) IC = –5A, IB = –5mA –2.5 V
Base to emitter saturation voltage VBE(sat) IC = –5A, IB = –5mA –3.0
Transition frequency fT VCE = –10V, IC = – 0.5A, f = 1MHz 20 MHz
Turn-on time ton 0.9 µs
IC = –5A, IB1 = –5mA, IB2 = 5mA,
Storage time tstg 2.5 µs
VCC = –50V
Fall time tf 1.7 µs

*h Rank classification
FE2

Rank Q P
hFE2 5000 to 15000 8000 to 30000

1
Power Transistors 2SB1492

PC — Ta IC — VCE VCE(sat) — IC
80 –12 –100

Collector to emitter saturation voltage VCE(sat) (V)

(1) TC=Ta TC=25˚C IC/IB=1000
(2) With a 100 × 100 × 2mm
Collector power dissipation PC (W)

70 Al heat sink IB=–5mA

(3) Without heat sink –10 –30
(PC=3.5W)

Collector current IC (A)

60

(1) –8 –10
–1mA
50 – 0.9mA
– 0.8mA TC=100˚C
40 –6 – 0.7mA –3 25˚C
– 0.6mA
–25˚C
– 0.5mA
30
–4 – 0.4mA –1

20 – 0.3mA
(2)
–2 – 0.2mA – 0.3
10
(3) – 0.1mA

0 0 – 0.1
0 20 40 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 –12 – 0.1 – 0.3 –1 –3 –10 –30 –100
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A)

VBE(sat) — IC hFE — IC Cob — VCB

–100 100000 1000
IC/IB=1000 VCE=–5V IE=0
Base to emitter saturation voltage VBE(sat) (V)

Collector output capacitance Cob (pF)

f=1MHz
Forward current transfer ratio hFE

30000 25˚C TC=25˚C

–30 TC=100˚C 300
10000

–10 –25˚C 100

3000

–3 TC=–25˚C 1000 30

300
–1 10
100˚C 25˚C
100

– 0.3 3
30

– 0.1 10 1
– 0.1 – 0.3 –1 –3 –10 –30 –100 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 –1 –3 –10 –30 –100
Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V)

ton, tstg, tf — IC Area of safe operation (ASO)

100 –100
Pulsed tw=1ms Non repetitive pulse
Duty cycle=1% TC=25˚C
30 IC/IB=1000 –30
Switching time ton,tstg,tf (µs)

(–IB1=IB2)
ICP
Collector current IC (A)

10 VCC=–50V –10
TC=25˚C t=1ms
IC
3 tstg –3 10ms

tf
1 –1 DC
ton

0.3 – 0.3

0.1 – 0.1

0.03 – 0.03

0.01 – 0.01
0 –4 –8 –12 –16 –1 –3 –10 –30 –100 –300 –1000
Collector current IC (A) Collector to emitter voltage VCE (V)

2
Power Transistors 2SB1492

Rth(t) — t
1000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
Thermal resistance Rth(t) (˚C/W)

100

(1)

10 (2)

0.1
10–3 10–2 10–1 1 10 102 103 104
Time t (s)