Date:23/09/2020

AdvancedVLSIDesignLab(EC17203)
EXPERIMENT NO. 5

AIM: To design and Simulate The Ring Oscillator using SymicaDETool .

Tools and Apparatus used: Symica 3.1.0.0209

THEORY:
A ring oscillator is a device composed of an odd number of NOT gates in a ring, whose output
oscillates between two voltage levels, representing true and false. The NOT gates, or inverters, are
attached in a chain and the output of the last inverter is fed back into the first.

The main statement of the oscillator is that the oscillation is achieved through positive feedback
which generates the output signal without input signal

Fig.5.1 Circuit diagram of Ring Oscillator Fig.5.2: CMOS Inverter Circuit

Truth Table of CMOS inverter:

Vin T1 T2 Vout

0 off on 1

1 off off 0

Table5.1
Design and simulation:
CIRCUIT DIAGRAM:
Design Parameters:
NMOS(L= 180nm, W=360nm) VDD = 1.8V
PMOS(L=180nm,W=720) CMOS technology: PTM 130nm

Fig5.3: Ring oscillator circuit has been successfully designed using SymicaDE tool.

OBSERVATIONS:

INPUT SIGNAL PULSE-

V1= 1.8 V, V2= 0V Period= 100nsec

Transient Analysis:

Fig 5.4: Transient Analysis Input and Output

 From Simulation From Calculation

Propagation delay(from input 42.5 ns 36.12(=2*3*6.02) ns

to output)
Frequency of output 24.5 MHz 27.6 MHz
signal(=1/prop.delay)
Table 5.2 Simulated vs calculated results

RESULT:

• Ring oscillator circuit has been successfully designed using SymicaDE tool.
• Transient analysis performed also delay time is also calculated.