BU407/407H

BU407/407H

High Voltage Switching

• Use In Horizontal Deflection Output Stage

1 TO-220

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 330 V
VCEO Collector-Emitter Voltage 150 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current (DC) 7 A
ICP Collector Current (Pulse) 10 A
IB Base Current 4 A
PC Collector Dissipation (TC=25°C) 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Units
ICES Collector Cut-off Current VCE = 330V, VBE = 0 5 mA
VCE = 200V, VBE = 0 100 µA
VCE = 200V, VBE = 0 @ TC= 150°C 1 mA
IEBO Emitter Cut-off Current VBE = 6V, IC = 0 1 mA
VCE(sat) Collector-Emitter Saturation Voltage
: BU407 IC = 5A, IB = 0.5A 1 V
: BU407H IC = 5A, IB = 0.8A 1 V
VBE(sat) Base-Emitter Saturation Voltage
: BU407 IC = 5A, IB = 0.5A 1.2 V
: BU407H IC = 5A, IB = 0.8A 1.2 V
fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 10 MHz
tOFF Turn OFF Time
: BU407 IC = 5A, IB = 0.5A 0.75 µs
: BU407H IC = 5A, IB = 0.8A 0.4 µs

©2000 Fairchild Semiconductor International Rev. A, February 2000

This datasheet has been downloaded from http://www.digchip.com at this page

 BU407/407H
Typical Characteristics

5
A mA IB = 160mA 1000
00m 180
IB =
IB = 2 A VCE = 5V
IB = 140m
A
IB = 120m
IC[A], COLLECTOR CURRENT

4
0m A
IB = 10
mA
IB = 80

hFE, DC CURRENT GAIN

100
mA
3 IB = 60

IB = 4 0 mA
2

IB = 20mA 10

0
0 1 2 3 4 5 6 7 8 9 10 1
1 10 100 1000 10000

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

VCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE

10000 1000

IC = 10 IB f = 1MHz
Cob [pF], CAPACITANCE

1000 VBE(sat) 100

100 10

VCE(sat)

10 1
1 10 100 1000 10000 1 10 100

IC[mA], COLLECTOR CURRENT V CB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance

Collector-Emitter Saturation Voltage

80

70
PD [W], POWER DISSIPATIOAN
IC[A], COLLECTOR CURRENT

IC Max. (Pulsed)
10 60
IC Max. (Continuous)

50
Di
ss

1m
ip
at

s
10
io

40
10 ited

m
n

0m

s
Li
m

1 30

20
S/
bL
im

VCE MAX.
ite

10
d

0.1 0
1 10 100 0 25 50 75 100 125 150 175 200

o
VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area Figure 6. Power Derating

©2000 Fairchild Semiconductor International Rev. A, February 2000

 BU407/407H
Package Demensions

TO-220

1.30 ±0.10 9.90 ±0.20 4.50 ±0.20

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2000 Fairchild Semiconductor International Rev. A, February 2000

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2000 Fairchild Semiconductor International Rev. E