MOSFET-3

DC analysis of FET
Example-1
• Problem Statement: Analyze the circuit shown in
Figure (a) to determine the voltages at all nodes and
the current through all branches. Let Vtn = 1V and
k’n(W/L) = 1mA/V2
 EXAMPLE-2
• The transistor has parameters
VDD = 10V
VTN = 2V and Kn = 0.25mA/V2.
• Find ID and VDS
R1 = 280k RD = 10k

R2 = 160k
 Solution
1. Calculate the value of VGS

VGS =VG - VS
2. Assume the transistor is biased in the saturation region, the drain current:
I D  K n VGS  VTN 
2

I D  0.25(3.636  2) 2  0.669mA

3. Calculate VDS
VDS = VD - VS =VDD – IDRD = 3.31 V

4. Calculate VOV =VGS – VTN = 3.636 – 2 = 1.636 V

5. Confirm your assumption: VDS > VOV our assumption that the transistor is in
saturation region is correct
Answer: ID = 0.669 mA and VDS = 3.31 V
 EXAMPLE-3

The MOSFET in the circuit shown has parameters, 𝑉𝑇𝑁 = 0.8 𝑉 and 𝐾𝑛 = 0.03 mA/V 2 .
Assume that, 𝑅1 = 160 k, R2 = 520 k and RD = 6 k . Calculate IDQ and VDSQ .
 Solution
1. Calculate the value of VGS
VGS = 6.12 V

2. Assume the transistor is biased in the saturation region, the drain current:
I D  K n VGS  VTN 
2

I D  0.03(6.12  0.8) 2  0.85mA

3. Calculate VDS
IDRD + VDS – 8 = 0
VDS = 8 – 6(0.85) = 2.9 V

4. Calculate VOV = VGS – VTN = 6.12 – 0.8 = 5.32 V

5. Confirm your assumption: VDS < VOV our assumption that the transistor is in
saturation region is NOT CORRECT
That means our transistor is in non-saturation mode: Go back to step 2

I D  K n [2VGS  VTN VDS  VDS ]

2

ID = 0.03 2 ( 5.32 ) (8 – 6ID) – (8 – 6ID)2

33.33 ID = 10.64 (8 – 6ID) – (64 – 96ID + 36ID2

33.33 ID = 85.12 – 63.84 ID – 64 + 96ID - 36ID2

ID = 0.75 mA
36 ID2 + 1.17 ID – 21.12 = 0

3. Go back to Calculate VDS ID = - 0.78 mA

IDRD + VDS – 8 = 0
VDS = 8 – 6(0.75) = 3.5 V

Answer: ID = 0.75 mA and VDS = 3.5V