Si4835DY

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.019 @ VGS = - 10 V - 8.0
- 30
0.033 @ VGS = - 4.5 V - 6.0

S S S

SO-8

S 1 8 D
G
S 2 7 D

S 3 6 D

G 4 5 D

Top View
D D D D
Ordering Information: Si4835DY
Si4835DY-T1 (with Tape and Reel)
P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 30
V
Gate-Source Voltage VGS "25

TA = 25_C - 8.0
Continuous Drain Current (TJ = 150_C)a, b ID
TA = 70_C - 6.4
A
Pulsed Drain Current IDM - 50
Continuous Source Current (Diode Conduction)a, b IS - 2.1
TA = 25_C 2.5
Maximum Power Dissipationa, b PD W
TA = 70_C 1.6
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t v 10 sec 50
Maximum Junction to Ambienta
Junction-to-Ambient RthJA _C/W
Steady State 70

Notes
a. Surface Mounted on FR4 Board.
b. t v10 sec.

Document Number: 70836 www.vishay.com

S-31062—Rev. B, 26-May-03 1
Si4835DY
Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA - 1.0 V

Gate-Body Leakage IGSS VDS = 0 V, VGS = "25 V "100 nA

VDS = - 30 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = - 30 V, VGS = 0 V, TJ = 70_C -5
VDS w - 5 V, VGS = - 10 V - 40
On State Drain Currenta
On-State ID(on)
D( ) A
VDS w - 5 V, VGS = - 4.5 V - 10
VGS = - 10 V, ID = - 8.0 A 0.0155 0.019
On State Resistancea
Drain Source On-State
Drain-Source rDS(on) W
VGS = - 4.5 V, ID = - 5.0 A 0.027 0.033

Forward Transconductancea gfs VDS = - 15 V, ID = - 8.0 A 17 S

Diode Forward Voltagea VSD IS = - 2.1 A, VGS = 0 V - 0.75 - 1.2 V

Dynamicb
Total Gate Charge Qg 21 31
Gate-Source Charge Qgs VDS = - 10 V, VGS = - 5 V, ID = - 4.6 A 6.5 nC
Gate-Drain Charge Qgd 8
Gate Resistance Rg 1.0 2.6 4.4 W
Turn-On Delay Time td(on) 16 30
Rise Time tr 13 25
VDD = - 15 V, RL = 15 W
Turn-Off Delay Time td(off) ID ^ - 1 A, VGEN = - 10 V, RG = 6 W 56 100 ns
Fall Time tf 30 60
Source-Drain Reverse Recovery Time trr IF = - 2.1 A, di/dt = 100 A/ms 40 80

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

www.vishay.com Document Number: 70836

2 S-31062—Rev. B, 26-May-03
 Si4835DY
Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics
50 50
VGS = 6 thru 10 V TC = - 55_C
5V
25_C
40 40
I D - Drain Current (A)

I D - Drain Current (A)

125_C
30 30

4V
20 20

10 10

2V 3V

0 0
0 2 4 6 8 10 0 1 2 3 4 5 6

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

0.20 3500

3000
r DS(on) - On-Resistance ( W )

Ciss
0.15
C - Capacitance (pF)

2500

2000
0.10
1500

1000 Coss
0.05 VGS = 4.5 V

VGS = 10 V 500
Crss
0.00 0
0 10 20 30 40 50 0 6 12 18 24 30

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

10 1.8

VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)

1.6
8 ID = 4.6 A ID = 8.0 A
r DS(on) - On-Resistance (W)

1.4
(Normalized)

6
1.2

1.0
4

0.8
2
0.6

0 0.4
0 10 20 30 40 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)

Document Number: 70836 www.vishay.com

S-31062—Rev. B, 26-May-03 3
Si4835DY
Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
30 0.10

0.08

r DS(on) - On-Resistance ( W )
I S - Source Current (A)

10
TJ = 150_C
0.06

0.04

TJ = 25_C ID = 8.0 A

0.02

1 0.00
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Threshold Voltage Single Pulse Power

1.0 80

0.8 ID = 250 mA

60
0.6
V GS(th) Variance (V)

Power (W)

0.4
40
0.2

0.0
20

- 0.2

- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
TJ - Temperature (_C) Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2 Notes:

0.1 PDM

0.1
t1
0.05 t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 70_C/W
0.02
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (sec)

www.vishay.com Document Number: 70836

4 S-31062—Rev. B, 26-May-03