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BTT6200 1EJA Data Sheet 10 Infineon 748987 PDF
BTT6200 1EJA Data Sheet 10 Infineon 748987 PDF
BTT6200-1EJA
Smart High-Side Power Switch
Single Channel, 200mΩ
Data Sheet
PROFET™+ 24V
Rev. 1.0, 2014-08-20
Automotive Power
BTT6200-1EJA
Table of Contents
Table of Contents
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.1 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.3 Voltage and Current Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2 Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.3.1 PCB set up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.3.2 Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5 Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.1 Output ON-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.2 Turn ON/OFF Characteristics with Resistive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.3 Inductive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.3.1 Output Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.3.2 Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.4 Inverse Current Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.5 Electrical Characteristics Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.1 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.2 Undervoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.3 Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
6.4 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6.5 Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6.5.1 Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6.5.2 Temperature Limitation in the Power DMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6.6 Electrical Characteristics for the Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
7 Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
7.1 IS Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
7.2 SENSE Signal in Different Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
7.3 SENSE Signal in the Nominal Current Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
7.3.1 SENSE Signal Variation as a Function of Temperature and Load Current . . . . . . . . . . . . . . . . . . . 28
7.3.2 SENSE Signal Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
7.3.3 SENSE Signal in Open Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
7.3.3.1 Open Load in ON Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
7.3.3.2 Open Load in OFF Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
7.3.3.3 Open Load Diagnostic Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
7.3.4 SENSE Signal in Short Circuit to VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
7.3.5 SENSE Signal in Case of Overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
7.3.6 SENSE Signal in Case of Inverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
7.4 Electrical Characteristics Diagnostic Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
8 Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
8.1 Input Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
8.2 DEN Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table of Contents
1 Overview
Application
• Suitable for resistive, inductive and capacitive loads
• Replaces electromechanical relays, fuses and discrete circuits
• Most suitable for loads with high inrush current, such as lamps
• Suitable for 24V Trucks and Transportation System
Basic Features
PG-DSO-8-43 EP
• Single channel device
• Very low stand-by current
• 3.3 V and 5 V compatible logic inputs
• Electrostatic discharge protection (ESD)
• Optimized electromagnetic compatibility
• Logic ground independent from load ground
• Very low power DMOS leakage current in OFF state
• Green product (RoHS compliant)
• AEC qualified
Description
The BTT6200-1EJA is a 200 mΩ single channel Smart High-Side Power Switch, embedded in a PG-DSO-8-43
EP, Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by an
N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is
specially designed to drive lamps up to 1x R10W 24V or 1x R5W 12V, as well as LEDs in the harsh automotive
environment.
Overview
Diagnostic Functions
• Proportional load current sense
• Open load detection in ON and OFF
• Short circuit to battery and ground indication
• Overtemperature switch off detection
• Stable diagnostic signal during short circuit
• Enhanced kILIS dependency with temperature and load current
Protection Functions
• Stable behavior during undervoltage
• Reverse polarity protection with external components
• Secure load turn-off during logic ground disconnection with external components
• Overtemperature protection with latch
• Overvoltage protection with external components
• Enhanced short circuit operation
Block Diagram
2 Block Diagram
VS
voltage sensor
internal
power
over T
supply
temperature clamp for
inductive load
gate control
driver & over current
IN
logic charge pump switch limit
ESD
DEN protection load current sense and OUT
open load detection
IS
forward voltage drop detection
Pin Configuration
3 Pin Configuration
GND 1 8 OUT
IN 2 7 OUT
DEN 3 6 OUT
IS 4 5 NC
Pinout Single.vsd
Pin Configuration
IS
VS
VS
IIN
IN
VIN VDS
IDEN IOUT
DEN OUT
VDEN
IIS VOUT
IS
GND
VIS
IGND
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
70µm
1.5mm
35µm
2 13
3 12
COOLING
TAB
4 11
VS
5 10
6 9
7 8
thermique SO14.vsd
Figure 5 PC Board Top and Bottom View for Thermal Simulation with 600 mm² Cooling Area
100
Zth-ja [K/W]
10
1s0p-footprint
1s0p-300mm²
1s0p-600mm²
2s2p
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Time [s]
90
85
80
75
70
Rthja [K/W]
65
60
55
1s0p
50
45
40
0 100 200 300 400 500 600 700
footprint Area [mm2]
Power Stage
5 Power Stage
The power stage is built using an N-channel vertical power MOSFET (DMOS) with charge pump.
400
320
350 300
280
300
260
RDS(ON) [mΩ ]
RDS(ON) [mΩ ]
240
250
220
200
200
180
160
150
140
100 120
-40 -20 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 35
Junction Temperature TJ [°C] Supply Voltage VS [V]
IN
VIN_H
VIN_L
t
VOUT dV/dt ON dV/dt OFF
t ON
90% VS
tOFF_delay
70% VS
30% VS
tON_delay tOFF
10% VS
t
Switching times.vsd
Power Stage
VS
ZDS(AZ)
VDS
INx
LOGIC
VBAT IL
GND OUTx
VIN L, RL
VOUT
ZGND
Output clamp.vsd
IN
t
V OUT
VS
V S-VDS(AZ)
IL
t
Switching an inductance.vsd
During demagnetization of inductive loads, energy has to be dissipated in the BTT6200-1EJA. This energy can be
calculated with following equation:
V S – V DS ( AZ ) RL × IL ⎞
× ln ⎛ 1 – --------------------------------
L
E = V DS ( AZ ) × ------ × -------------------------------- ⎝
+I (1)
RL RL V S – V DS ( AZ )⎠ L
Power Stage
1 VS
E = --- × L × I × ⎛⎝ 1 – --------------------------------⎞
2
(2)
2 V S – V DS ( AZ )⎠
The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 12 for the
maximum allowed energy dissipation as a function of the load current.
100
EAS (mJ)
10
1
0 0.5 1 1.5 2 2.5 3
IL(A)
Figure 12 Maximum Energy Dissipation Single Pulse, TJ_START = 150 °C; VS = 28V
Power Stage
VBAT
VS
Gate driver
VINV
Device OL
INV
IL(INV)
logic Comp.
comp. OUT
GND
IS
ZGND
inverse current.vsd
Power Stage
Power Stage
Protection Functions
6 Protection Functions
The device provides integrated protection functions. These functions are designed to prevent the destruction of
the IC from fault conditions described in the data sheet. Fault conditions are considered as “outside” normal
operating range. Protection functions are designed for neither continuous nor repetitive operation.
ZIS(AZ) VS
DEN
R DEN
LOGIC
IN
R IN IOUT(GND)
OUT
ZDESD GND
RIS
IS
ZGND
Protection Functions
VOUT
undervoltage behavior
.vsd
VS
VS(UV) VS(OP)
ISOV
ZIS(AZ) VS
DEN
R DEN
LOGIC
R IN
IN
OUT
ZDESD GND
R IS
ZGND
Overvoltage protection.vsd
Protection Functions
Micro controller
protection diodes Z IS(AZ) VS
ZD(AZ) ZDS(AZ)
IS
RSENSE
VDS(REV)
R DEN
DEN
LOGIC
IN -V S(REV)
IN0 R IN
OUT
ZDESD GND
IS
R GND
R IS
Reverse Polarity.vsd
Protection Functions
IN
t
IL
LOAD CURRENT BELOW
LOAD CURRENT LIMITATION PHASE
LIMITATION PHASE
IL(x)SC
IL(NOM)
t
TDMOS
TJ(SC) Temperature
protection phase
ΔTJ(SW)
TA t
tsIS(FAULT)
IIS tsIS(OC_blank)
IIS(FAULT)
IL(NOM) / kILIS
0A t
VDEN tsIS(OFF)
0V t
Hard start.vsd
Protection Functions
Diagnostic Functions
7 Diagnostic Functions
For diagnosis purpose, the BTT6200-1EJA provides a combination of digital and analog signals at pin IS. These
signals are called SENSE. In case the diagnostic is disabled via DEN, pin IS becomes high impedance. In case
DEN is activated, the sense current of the channel is enabled.
7.1 IS Pin
The BTT6200-1EJA provides a sense signal called IIS at pin IS. As long as no “hard” failure mode occurs (short
circuit to GND / current limitation / overtemperature / excessive dynamic temperature increase or open load at
OFF) a proportional signal to the load current (ratio kILIS = IL / IIS) is provided. The complete IS pin and diagnostic
mechanism is described on Figure 19. The accuracy of the sense current depends on temperature and load
current. Due to the ESD protection, in connection to VS, it is not recommended to share the IS pin with other
devices if these devices are using another battery feed. The consequence is that the unsupplied device would be
fed via the IS pin of the supplied device.
Vs
I IS =
FAULT IIS (FAULT) I L / k ILIS
ZIS(AZ)
1
0
IS
0
DEN
Sense schematic.vsd
Diagnostic Functions
Diagnostic Functions
4
IIS [mA]
Diagnostic Functions
500
calibrated k ILIS
min/max k ILIS
450 typical k ILIS
400
350
k ILIS
300
250
200
150
0 0.5 1 1.5
IL [A]
BTT6200-1EJA
Figure 21 Improved Current Sense Accuracy with One Calibration Point at 0.2A
V IN
t
IL
tON tOFF tON
90% of
IL static
t
VDEN
t
IIS tsIS(LC)
tsIS(ON) tsIS(OFF)
tsIS(ON_DEN)
90% of
IIS static
Diagnostic Functions
I IS
IIS(OL)
IL
IL(OL)
Sense for OL .vsd
Diagnostic Functions
Vbat
SOL
VS
IIS(FAULT)
R OL
OL
comp.
OUT
IS
ILOFF
Ileakage
GND
RIS
R PD
ZGND
Rleakage
VOL(OFF)
VIN
VOUT t
VS-V OL(OFF)
RDS(ON) x IL shutdown with load
IOUT t
tsIS(FAULT_OL_ON_OFF) t
IIS tsIS(LC)
Diagnostic Functions
Vbat
VS
IIS(FAULT) VBAT
OL
comp.
IS
OUT
V OL(OFF)
GND
IS
RIS ZGND
RSC_VS
Diagnostic Functions
Diagnostic Functions
Diagnostic Functions
Input Pins
8 Input Pins
IN
Input Pins
Characterization Results
9 Characterization Results
The characterization have been performed on 3 lots, with 3 devices each. Characterization have been performed
at 8 V, 28 V and 36 V over temperature range.
P_4.2.3 P_4.2.4
6.000 5.000
5.500 4.500
5.000 4.000
4.500 3.500
[V]
[V]
4.000 3.000
3.500 2.500
3.000 2.000
8V 8V
2.500 28V 1.500 28V
36V 36V
2.000 1.000
‐50 ‐25 0 25 50 75 100 125 150 ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]
2.500 1.000
2.000 0.800
[mA]
[µA]
1.500 0.600
1.000 0.400
0.500 8V 0.200 8V
28V 28V
36V 36V
0.000 0.000
‐50 ‐25 0 25 50 75 100 125 150 ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]
Current Consumption for Whole Device with Load. Standby Current for Whole Device with Load.
Channel Active IGND_1 = f(TJ;VS) IS(OFF) = f(TJ;VS)
Characterization Results
P_5.5.4 P_5.5.5
18.000 75.000
16.000 74.000
73.000
14.000
72.000
12.000
71.000
10.000
[mV]
[V]
70.000
8.000
69.000
6.000
68.000
4.000
67.000
8V 8V
2.000 28V 66.000 28V
36V 36V
0.000 65.000
‐50 ‐25 0 25 50 75 100 125 150 ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]
Output Voltage Drop Limitation at Low Load Current Drain to Source Clamp Voltage VDS(AZ) = f(TJ)
VDS(NL) = f(TJ)
P_5.5.11 P_5.5.12
1.000 0.900
0.900 0.800
0.800
0.700
0.700
0.600
0.600
0.500
[V\µs]
[V\µs]
0.500
0.400
0.400
0.300
0.300
8V
0.200
0.200 28V
8V
36V
0.100 0.100 28V
36V
0.000 0.000
‐50 ‐25 0 25 50 75 100 125 150 ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]
Characterization Results
P_5.5.14 P_5.5.15
90.000 90.000
80.000 80.000
70.000 70.000
60.000 60.000
50.000 50.000
[µs]
[µs]
40.000 40.000
30.000 30.000
8V
20.000 20.000
28V
8V
36V
10.000 28V 10.000
36V
0.000 0.000
‐50 ‐25 0 25 50 75 100 125 150 ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]
P_5.5.19 P_5.5.20
3.00E+02 3.00E+02
2.50E+02 2.50E+02
2.00E+02 2.00E+02
[µJ]
[µJ]
1.50E+02 1.50E+02
1.00E+02 1.00E+02
8V 8V
5.00E+01 28V 5.00E+01 28V
36V 36V
0.00E+00 0.00E+00
‐50 ‐25 0 25 50 75 100 125 150 ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]
Characterization Results
P_6.6.4
16.000
14.000
12.000
10.000
[A]
8.000
6.000
4.000
8V
2.000 28V
36V
0.000
‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C]
Characterization Results
P_7.5.2
1.600
14.000
1.400
1.200
12.000
1.000
10.000
[mA]
[µA]
0.800
0.600 8.000
0.400
8V 6.000 8V
0.200 28V 28V
36V 36V
0.000 4.000
‐50 ‐25 0 25 50 75 100 125 150 ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]
P_7.5.3 P_7.5.7
75.000 20.000
74.000 18.000
73.000 16.000
72.000 14.000
71.000 12.000
[mA]
[V]
70.000 10.000
69.000 8.000
68.000 6.000
67.000 4.000
8V 8V
Sense Signal Maximum Voltage Sense Signal Maximum Current in Fault Condition
VIS(AZ) = f(TJ) IIS(FAULT) = f(TJ;VS)
Characterization Results
P_8.4.1 P_8.4.2
1.500 1.800
1.400
1.700
1.300
1.600
1.200
1.500
1.100
[V]
[V]
1.000 1.400
0.900
1.300
0.800
1.200
0.700
8V 8V
28V 1.100 28V
0.600
36V 36V
0.500 1.000
‐50 ‐25 0 25 50 75 100 125 150 ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]
P_8.4.3 P_8.4.5
600.000 16.000
14.000
500.000
12.000
400.000
10.000
[mV]
[µA]
300.000 8.000
6.000
200.000
4.000
100.000 8V 8V
28V 2.000 28V
36V 36V
0.000 0.000
‐50 ‐25 0 25 50 75 100 125 150 ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]
Application Information
10 Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
VBAT
Voltage Regulator
T1
OUT VS
GND
C VS Z
ROL
VDD VS
I/O R DEN DEN
Micro
controller OUT OUT4
I/O R IN IN
C OUT
RPD
OUT3
A/D R SENSE IS
GND
GND
RIS
CSENSE
R GND
Application Information
Package Outlines
11 Package Outlines
0.35 x 45˚
3.9 ±0.11)
Stand Off 0.1 C D 2x
1.7 MAX.
0.19 +0.06
-0.1
(1.45)
0.1+0
8˚ MAX.
C 0.08 C
1.27 0.64 ±0.25
Seating Plane
0.41±0.09 2) 6 ±0.2 0.2 M D 8x
0.2 M C A-B D 8x D
Bottom View
3 ±0.2
A
2.65 ±0.2
8 5 1 4
1 4 8 5
B
0.1 C A-B 2x
4.9 ±0.11)
Index Marking
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Dambar protrusion shall be maximum 0.1 mm total in excess of lead width
3) JEDEC reference MS-012 variation BA PG-DSO-8-27-PO V01
Revision History
12 Revision History
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
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of any third party.
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Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
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