Contents Features .. Pin Assignment Pin Functions Block Diagram . Instruction Set : Absolute Maximum Ratings . Recommended Operating Conditions Pin Capacitance Endurance ... DC Electrical Characteristics AC Electrical Characteristics Operation ... Receiving a Start-Bit ... : Three-wire Interface (DI-DO direct connection) .. 11 Memory Protection .. u Dimensions (Unit : mm) 12 Ordering Information 12 CharacteristicsCMOS SERIAL E2PROM S-29LXX1A Series ‘The S-29LXX1A Series is low power IK/2K/4K-bit serial E2PROM with a low operating voltage range. They are organized as 64- word 16-bit, 128-wordx 16-bit and 256-word 16-bit, respectively. Each is capable of sequential read, where addresses are automatically incremented in 16-bit blocks. The instruction code is compatible with the NM93CSXX Series. ‘The S-29LXX1A Series is capable of protecting the memory, 50% of which can be protected starting from address 00. MM Foaturos Low power consumption erga aaa Te eee Endurance : 108 cyclesiword Operating : 0.8 mA Max. (Voc Data retention : 10 years soak Mexce 2 K bite NMOscs: 3 ib + Low operating voltage range S-20L131A : 1K bite NMO3CS46 instruction code compatible Wie 11.955 V + $-29L221A : 2K bits NM83CSS6 instruction code compatible Read TRIO SV Sequential read capable + $-29L331A : 4K bits NMS3CS66 instruction code compatible Memory Protection Pin Assignment so ins sig thc SO FEY sk 2 ‘7 pONC D3 6 PROTECT Do m3 6 PROTECT wort Corie eigen S-291220Ars 5-291331ADFE Seem oi Pin Functions on [oF — Memory Protection Contel Input ret | 6 | 6 PROTECT Connected to GND or Open : Protection Velid Connected to Vee + Protection Invalid ne 7_]7_|Ne Connection Veo 2 | 8 [PowersupplyCMOS SERIAL E?PROM S-29LXX1A Series Block Diagram emery ray wtePateion - moreer Pros tank nares ec oF Tonk? decoder oe ne + [euipabates } —= 00 Di o—__—_+4 t ase decade sk of Goa gewratr Instruction Set * 5036 of the memory can be protected starting from address 00 Figure 2 Table 2 Instruction stat | ope Address Bit | code |s-zoriaia [5.291221 ] 52913510 Data READ (Read data) 10_| AstoAe | XAgtoAa | ArtoAn Dis to Dp Output WRITE (Write data) Ot | AstoAy | XAgtomy | ArtoAy isto Dy Input ERASE (Erase data) EWEN (Program enable) 11_| Astoag [xAgto me | Artomo 00 | ste | oa | 1 tre0000 EWDS (Program disable) 00 | 00x00 | 0x00 | Otro x 1 Doesn't matter. +: When 16-bit date ofthe specified address is output, the data ofthe next address is output, | Absolute Maximum Ratings Table 3 Parameter symbol [Ratings | Unit Power supply valtage Vec_| a3t0470 |v Inputvoltage. Vw | -92t0vecso2 |v foutnut voltage Vour_| 03t0Vec | Vv Storage temperature under bias Tous | 3000 +95 |e [Storage temperature Tag | 510 +150 | “CCMOS SERIAL E2PROM S-29LXX1A Series HM Rocommended Operating Conditions. Table 4 Parameter Symbol Conditions Min wwe. | Max. | Unit Read Operation 0 _ ss lv Powersupplyvottage | Vcc _ | Write Enable/Disable Write Operation 18 = ss fv High levelinpurvohage | Vix oaxve | — vee |v Lowlevel input vattage | Vi. 00 = | oaxve |v Operating temperature | Toor 40 = +05 | *c Pin Capacitance Table S Parameter symbol | Conditions Input Copacitance | Cw _|Viw=OV. ‘Output Capacitance | Cour |Vowr=0V Ml Endurance Table 6 Parameter symbol | min. | typ. | Max. Unit reshword Endurance: Nw | 108:CMOS SERIAL E?PROM S-29D00A Series MDC Electrical Characteristics Table 7 Wace 27 i085 wo2IV Parameter | Smbi | Conditions SV to5.5V Wee Ad Unit * [Min] typ. [Max in. Typ, [Max | in. typ. [ax Current consumption | leer [DOunleaded | — | — | 08] —] —] 06 | — | —] 04 | ma (R40) : _ Current consumption | leer [DOurieaded | — | — 20] — | — ] 15] —| — | 10 | ma (PROGRAM) _ Table 8 Vege asvee o45V | Vers 181027V Parameter ‘Smbi Conditions se Tats unit, in_[tyn [Max] Min. [Tyo. [Max] win, [yo [Max Standby current zg lotherinput: Connectedto | — |—|os} — |—]os) — |—|o4| ua consumption Vcc Or6ND Teeatletane |, (geen rover = forfvo] — forfro] — [os [v0 [om utput leakage ouspat estas | 1. |yqyr=Gndt0Vec = forfrol — [os ]se] — for] so] Low level output Rima = |= Teas v voltage lop = 100 pA — f—ferl — (—fe[— [—lolv vel l= #00 6A za [—|— v ightevel output antec Teo rear =| — eee] = T= ¥ 104A vecu7| — | — [vecor] =| = [veees|— [=| v | Write enable latch |Only when write disable Von ws [—}—fos |-}—]aus [-]—]v data hold voltage ode PulkDown Curent | on [mOTECTTerminat=ver | 5 1—|eo| « |—[so[ 1 |—|isCMOS SERIAL EPROM S-29LXX1A Series MAC Electrical Characteristics Table 9 Measuring conditions Input pulse voltage Ot xVecto09%Vec Output reference voltage [0.5xVee [outputoad 100pF_ Table 10 Wego [ge aTteaSV [Vaan TOTO rameter smb i omen Min. [Typ. [Max.| Min. | Typ. [Max.| Min. [Typ. [wax] 2"! istup ine ts o2 oa 10 a cS hold ume veo |—|—|oa[—[—]10[—]— 1 Saeiiecttme es [oa |—[—]o2|—|— [ee] —[— Ta Data setuptime ts _[e2}—|—oa]—|—]o8|—|—] a Data old ime tox _[02]—|—|o«|—|—oa|—|—| us Output delay tine we |—|— foal —|—|0[—|— feof cock frequency te | © }—}20] © |= [0s] — | — foas|n] F Clock pulse width ORM | 0.25 | — 10 |—|—]20]—|]—| « be 5K ca ououtdsabietime | v2! | o |— [oss] 0 [—[os| o |—|r0| m Ovipat ene ne w Le [=fowle|—loso[—[rla programming ume we |= [20 [10] — | <0] io] — | «0 [roo] ms (READ) twee ss co Hz [-—F Hi (verry) Figure 3 Timing ChartCMOS SERIAL E*PROM S-29LXXTA Series Operation Instructions (in the order of start-bit, instruction, address, and datal are latched to DI in synchronization with the rising edge of SK after CS goes high. A start-bit can only be recognized when the high of DI is latched at the rising edae of SK after changing CS to high, itis impossible for it to be recognized as long as DI is low, even if there are SK pulses after CS goes high. Any SK pulses input while DI is low before receiving a start- bit are called "dummy clocks.” The number of clocks transmitted by the serial interface in a CPU and the number of clocks needed for operation of the serial memory IC can be adjusted by inserting several dummy clocks before a start-bit. instruction finishes when CS goes low, where it must be low between commands during tops. All input, including DI and SK signals. is ignored while CS is low, which is stand-by mode. 1. Read ‘The READ instruction reads data from a specified address. After AO is latched at the rising edge of SK, DO output changes from a highimpedance state (Hi-Z) to low level output. 16-bit data is continuously output in synchronization with the rise of SK. When all of the data (Dis to Do) in the specified address has been read, the data in the next address can be read with the input of another SK clock. Thus, the data over whole area of the memory can be read by continuously inputting SK clocks as long as CS is high. “The last addross (An = AT AQ = 1+ 11) rolls ever to the top addrass (An AO 00) e sc LMALPLMLALILPLILSLS ov Leff po ——____2___ dd, axfoufoa] eos] fou ouloul 2 [os] fo fou] oo] = t t Aneta mandation? Figure 4 Read Timing (6-791 1218) LFLPLAL UPLPLPLALAL | FULL bo cI + Pesfeufes] mlede ffelou] ~~ Jor] eu)sfesseuloul_o- - t t Aababebabititort anBabyhabiet? Figure 5 Read Timing (5-291221A)(UMU> SERIAL E-FHUM. S-29LXX1A Series po ———____"=\___., feqeafea] a] oe elon] [Pe eel] Anny A abstattge? Figure 6 Read Timing (52913314) 2. Write (WHITE, ERASE) There are two write instructions, WRITE, ERASE. Each automatically begins writing to the non-volatile memory when CS goes low at the completion of the specified clock input. ‘The write operation is completed in 10 ms (tpn Max), and the typical write period is less than 5 ms. In the S- 2OLXXIA Series, it is easy to VERIFY the completion of the write operation in order to minimize the write cycle by setting CS to high and checking the DO pin, which is low during the write operation and high after its completion. This VERIFY procedure can be executed over and over again. There are two methods to detect a change in the DO output. One is to detect a change from low to high setting CS to high, and the other is to detect a change from low to high as a result of repetitous operations of returning the CS to low atter setting CS to high and checking the DO output. Because all SK and OI inputs aro ignored during the write operation, any input of inetruction will alco bo disregarded. When DO outputs high after completion of the write operation or if it is in the high-impedence state (Hi-Z), the input of Instructions is available. Even if the DO pin remains high, it will entar the high- impedence state upon the recognition of a high of Di (star-bit) atached to the rising edge of an SK pulse. DI input snould be low during he VERIFY procedure.CMOS SERIAL E?PROM S-29LXX1A Series 21 WRITE This instruction writes 16-bit data to a specified address. ‘Atter changing GS to high, input a startDl, op-code (WRITE), address, and 10-Uit Vata. If there is a data overtiow of more than 16 bits, only the last 16-bils of the Jala is Considered valid. Changing CS to low will start the WRITE operation. Its rol evessary to make the data before init ating the WRITE operation. fo, sf ia ven sk BOLPLFLLELEL ELL LL 0 E70) TRG IC] if =] Ne oo Se Figure 7 WaITE Timing (5-2911314) or ot ver _| sk BOLLALELEL SLL LL 0 ETO TORE bo Be we Figure 8 WRITE Timing (52912214) eo, oe) a sk ECLALALELELELLLEL LLL LLP bt ETO eT ADE EDEDERO ICAL EE po ss Figure 9 Waite Timing (62913314)CMOS SERIAL E2PROM S-29LXX1A Series 22 CNASE ‘This command erases 16-bit data in a specified address. ‘After changing CS to high, input a start-bit, op-code (ERASE), and adaress. It is not necessary to input data, Changing CS to low will start the ERASE operation, which changes every bit of the 16 bit data to "1." cs a a sk OL LPL ALLEL bp OT Dt ed ine ot Do wen veer Figure 10 ERASE Timing (5-2911314) bi BT OTT KRENEK OT po ————__#2_ | Figure 11 ERASE Timing (5-2912214) 0 ETO a Do aoe Figure 12 ERASE Timing (S-291331A)CMOS SERIAL E?PROM S-29LXX1A Series 3 10 ‘Write enable (EWEN) and Write disable (FWDS) ‘The EWEN Instruction puts the $-29LXX1A Series inlo write enable mode, which accepts WRITE, ERASE Instructions. The EWDS insttuction puts the S-29LXX1A Series into write disable mode, which refuses WRITE, ERASE instructions. ‘The S-29LXX1A Series powers on in write disable modo, whioh protoote data againet unoxpocted, orroneoue write operations eaused by noise and/or CPU malfunctions. It chould bo kept in write disable mode except when performing write operations. Figure 13 EWEN/EWDS Timing (6-291131A) Figure 15 EWEN/EWDS Timing (S-291331A)CMOS SERIAL EPROM S-29LXX1A Series MM Rocelving a Start-Bit A start-bit can be recognized by latching the high level of DI at the rising edge of SK after chan high (Star-Bit Recognition). The write operation begins by inputting the write instruction and setting CS to low. The DO pin then outputs low during the write operation and high at its completion by setting CS to high (erity Operation). Therefore, only after a write operation, in order to accept the next command by having CS go high, the DO pin is switched trom a state of high-impedance to a state of data output; but it it recognizes a start-bit, the DU pin returns to a state of high-impedance (see Figure 3). Make sure that data output from the CPU does not interfere withthe data output from the serial memory IC when you configure a 3-wire interface by connecting DI input pin and DO output pin. Such interference may cause a start-bit fetch problem. I Three-wire Interface (DI-DO direct connection) Although the normal configuration of a serial interface is a 4-wire interface to CS, SK, Dl, and DO, a S-wire interface is also a possibilty by connecting DI and DO. However, since there is a possibilty that the DO output from the serial memory IC will interfere with the data output from the CPU with a 3-wire interface, install a resistor between DI and DO in order to give preference to data output from the CPU to DI (See Figure 16). ou S-29LXX1A gq b b q p p q sio| o 6 q b pop R: 10t0 100k Figure 16 Memory Protection The S-29LXX1A Series is capable of protecting the memory. So. the contents of the memory will not be rmiswriton due to error run oF malfunction of the CPU. When the PRGTEGT terminal is connected to GND for OPEN, write to Bank 1 in the memory array fe prohibited (50% of the memory can be protected starting from address 00). Because the pulldown resistance is eunnecied lo the PROTEST terminal internally, the memory can be automatically protected when the PHOTECT terminal is OPEN. When the protection Is valid, the data in the memory of Bank 1 will not be rewritten. However, because the write control circuit inside the IC functions, the next instruction cannot be executed during the time period of writing (tp). While write instruction is being input and write is being executed, always connect the PROTECT terminal to “H," *L? oF OPEN, and leave the input signal unchanged (see Figura 17) s Wirteinnuttion neat} very SN x HOON, o at Gc DO Hee tee [A ae yo] 0-25 Min, Figure 17 PROTECT Terminal input Signal Timing "CMOS SERIAL E?PROM $-29L001A Series Dimensions (Unit : mm) 1. B-pin SOP 2. B-pin SSOP Figure 19 1 Ordering Information S.29LXX1A Package «OF: SOP2 FS: SSOP LL ____ productname $-2911214 1 1K-bit S:20L2214 2 2K-bit S-29L831A + aK-bit 2m= Charactorietics 1, DC Characteristics 1.1. Current consumption (READ) tect — Ambiont tomporature Ta 0 lecy (sy 02 ar Taco) 1.3. Current consumption (READ) Ico: — Ambient temperature Ta Vez tev fogn 10 Kite BATA=0101 04 lecy (oA) 02 (SE, “80 0~«8S Tatto) 1.5 Current consumption (READ) icc — Power supply voltage Ve Te=25C Ygc= 100 KHz, 10KHe ost lees (oA) 02 7 ok Tit se? Vee) 1.7, Current consumption (PROGRAM) loca = Ambient temperature Ta Veerasv 10 leg wm || | os ° 00 race MOS SERIAL E?PROM S-29LXX1A Series 41.2 Current consumption (READ) lect — Ambient temperature Ta Vesa 3V = 500 KHz ATA = 0101 oa lec co 02 Ova 0 as ro) 4.4 Current consumption (READ) Iocy — Power supply valtaga Veo Tass foc= 1 Mite, 500 Kitz BATA=0101 see, Orne oA $ 02 fi 800K, LL, 234567 vem 4.8 Current Glock frequency foe lec os) 1.8 Current con cr) consumption (READ) toot — 3 \sumption (PROGRAM) oce— Ambiont tomporature Ta os a0 0 8s Taco) 13CMOS SERIAL E?PROM ‘S-29LXX1A Series, 4.9 Current consumption (PROGRAM) loc2 ~ k oA) Ambient temparature Ta Vece 18V 10 os oo oes Tate) 4.11. Standby current consumption Iss — ‘Ambient temperature Ta Vec= sv 108 107 108 109 1040 son rr Tac 1.13 Input leakage current ly ~ 4 way vA ‘Ambient temperature 1a Vee sav Sisk), Test=0v 10 os ol Lt “400 Tac 1.15. Output leakage current Ilo ~ Ambiont tomporature Ta Vecr sav 10 os ° “00-85 Taco 1.10 leea (oa 14 i A 1 hg A CCurront concumption (PROGRAM) lece Power supply voltage Veo Teac 10 os. OTT se 7 Veet) 2. Pull-Down current to — Power supply voltage Vee asa 40 20 ° 224567 Veet) 14 Input leakage current iy) ~ ‘Ambient temperature Ta Veeeiav SSK, DI, Testes sv 10 os ° “400 Taco 16 Output leakage current ILo ~ Ambient temperature Ta Ver! oo os “0085 Tee)(MOS SERIAL EPROM S-29LXX1A Series 1.17 High level output voltage Vou ~ ‘Ambient temperature Ta Voceasy ‘ag|_|lons #00 pa Vow a. wo 42 + “400 Tero 1.19 High level output voltage Vou ~ Ambient temperature 1a Vecs25¥ as|[low=-100 Yow 2.8 wi 23 1.21 Low level output voltage Vo. ~ Ambient temperature Ta Vem BV 0.03 | fot 100 Vou o.02 ow 0.01 “a0 0 5 Tac) 1.23. High level output current lo ~ ‘Ambiont tomperature Ta Vana7v Voue20V a i fox, mm | AL om 08s Taco 1.18 High level output vottage Vor - Ambient temperature Ta Tataav a7| [tons 100 Vou 2.6 we as 4 “0 Ta) 1.20 Low level output voltage Vo. ~ Ambient temperature Ta Ven asv oa) [lorszima Yo oz ws 01 “00 Tar 1.22 High level output current lon = ‘Ambient temperature Ta Veen 450 “00 Taco) 1.24 High fevel ouiput current oH Ambient temperature Ta 2y Vous 18¥ 4 oy cy 2 woes Tare) 516 (MOS SERIAL E?PROM S-29LXX1A Series. 1.25 Low level outout current lo. ~ Ambient temperature Ta Vecbaay vecedasy 20 log (ey 10 — oe 0s rac 1.27, Input inversion voltaye Viny = Power supply voltage Voc [re=25: cs, 3K, Ui, lpRoT 30 Yow wy 1 ° 123 45 67 Veet) 1.26 Low level output current lo. - Ambient temperature Ta 10 toy ma os oa 08s Taro 41.28 Input inversion voltage Viny ~ ‘Ambient temperature Ta VecE50V eSesKio, PROT 30 Vay wy 20 ona 08s reo2. AG Characteristics 2.1 Maximum operating frequency fax ~ Power supply voltage Voc T2345 Veet) 2.3 Program time ter - Ambient temperature Ta Veer 50V ton (ms) “a0 08S Taco 2.8 Program time ten - ‘Ambient temperature Ta Veew 1 8V 2.7 Data output delay tme top ~ Ambient temperature Ta Vena oa} 00 8S aco, CMOS SERIAL E2PROM S-29LXX1A Series 2.2 Program time ton ~ Power supply voltage Voc Ta=25°C ton (ms) 234567 Vee) 2.4 Program time tea - ‘Ambient temperature Ta Veez30V = IT “00S Tac Lata output delay time top Ambient temperature Ta Wecrasv on we B 0 [ 4 on 0 reco Data output delay time tep ~ ‘Ambiont temperature Ta Vern 18 06 top re 04 02 “00S Taco) v7