Ordering number : EN930D 2SB892 / 2SD1207

SANYO Semiconductors
DATA SHEET

2SB892 / 2SD1207 PNP / NPN Epitaxial Planar Silicon Transistors

Large-Current Switching Applications

Applications
• Power supplies, relay drivers, lamp drivers, and automotive wiring.

Features
• FBET and MBIT processed (Original process of SANYO).
• Low saturation voltage.
• Large current capacity and wide ASO.

Specifications ( ) : 2SB892
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)60 V
Collector-to-Emitter Voltage VCEO (--)50 V
Emitter-to-Base Voltage VEBO (--)6 V
Collector Current IC (--)2 A
Collector Current (Pulse) ICP (--)4 A
Collector Dissipation PC 1 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=(--)50V, IE=0A (--)0.1 μA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 μA
Continued on next page.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’ s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’ s products or
equipment.

www.semiconductor-sanyo.com/network

D0308EA MS IM TC-00001739 / 10904TN (KT)/91098HA (KT)/4067KI/3145KI No.930-1/5

 2SB892 / 2SD1207
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
hFE1* VCE=(--)2V, IC=(--)100mA 100 560
DC Current Gain
hFE2 VCE=(--)2V, IC=(--)1.5A 40
Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)50mA 150 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (22)12 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)1A, IB=(--)50mA (--0.3)0.15 (--0.7)0.4 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)1A, IB=(--)50mA (--)0.9 (--)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V

* : The 2SB892 / 2SD1207 are graded as follows by hFE at 100mA :

Rank R S T U
hFE 100 to 200 140 to 280 200 to 400 280 to 560

Package Dimensions
unit : mm (typ)
7520-002

6.0 4.7
5.0
8.5

0.5
3.0

0.6
0.5 0.5
1.0

14.0

1 2 3 1 : Emitter
2 : Collector
3 : Base

1.45 1.45 SANYO : MP

IC -- VCE IC -- VCE
--2.4 2.4
2SB892 2SD1207
50mA
A
--2.0 2.0 40m
Collector Current, IC -- A

Collector Current, IC -- A

25mA
A
0m

--1.6 1.6
mA
--5

0
--2
A 15mA
--1.2
--10m 1.2
--8mA
--6mA 8mA
--0.8 --4mA 0.8
4mA

--0.4
--2mA 0.4
2mA

IB=0mA IB=0mA
0 0
0 --0.4 --0.8 --1.2 --1.6 --2.0 --2.4 0 0.4 0.8 1.2 1.6 2.0 2.4
Collector-to-Emitter Voltage, VCE -- V ITR08646 Collector-to-Emitter Voltage, VCE -- V ITR08647

No.930-2/5
 2SB892 / 2SD1207
IC -- VCE IC -- VCE
--1200 1200
2SB892 2SD1207
--7mA 7mA
--1000 --6mA 1000 6mA
Collector Current, IC -- mA

Collector Current, IC -- mA
--5mA 5mA
--800 800
--4mA 4mA

--600 --3mA 600

3mA
--2mA
--400 400 2mA

--1mA
--200 200 1mA

IB=0mA IB=0mA
0 0
0 --2 --4 --6 --8 --10 --12 0 2 4 6 8 10 12
Collector-to-Emitter Voltage, VCE -- V ITR08648 Collector-to-Emitter Voltage, VCE -- V ITR08649
IC -- VBE IC -- VBE
--1200 1200
2SB892 2SD1207
VCE= --2V VCE=2V
--1000 1000
Collector Current, IC -- mA

Collector Current, IC -- mA
--800 800

--600 600

--400 400

--200 200

0 0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V ITR08650 Base-to-Emitter Voltage, VBE -- V ITR08651
hFE -- IC hFE -- IC
1000 1000
2SB892 2SD1207
7 7
VCE= --2V VCE=2V
5 5

3 3
DC Current Gain, hFE

DC Current Gain, hFE

2 2

100 100

7 7

5 5

3 3

2 2

10 10
--10 2 3 5 7 --100 2 3 5 7 --1000 2 3 5 10 2 3 5 7 100 2 3 5 7 1000 2 3 5
Collector Current, IC -- mA ITR08652 Collector Current, IC -- mA ITR08653
f T -- IC f T -- IC
1000 1000
2SB892 2SD1207
7 7
VCB= --10V VCB=10V
Gain-Bandwidth Product, f T -- MHz

Gain-Bandwidth Product, f T -- MHz

5 5

3 3

2 2

100 100
7 7
5 5

3 3

2 2

10 10
--10 2 3 5 7 --100 2 3 5 7 --1000 2 3 10 2 3 5 7 100 2 3 5 7 1000 2 3
Collector Current, IC -- mA ITR08654 Collector Current, IC -- mA ITR08655

No.930-3/5
 2SB892 / 2SD1207
Cob -- VCB Cob -- VCB
2 100
2SB892 2SD1207
f=1MHz 7 f=1MHz
Output Capacitance, Cob -- pF

Output Capacitance, Cob -- pF

100
5
7

5
3

3 2

10
10
7
7

5 5
--1.0 2 3 5 7 --10 2 3 5 7 --100 1.0 2 3 5 7 10 2 3 5 7 100
Collector-to-Base Voltage, VCB -- V ITR08656 Collector-to-Base Voltage, VCB -- V ITR08657
VCE(sat) -- IC VCE(sat) -- IC
--100 100
2SB892 2SD1207
5 5
IC / IB=20 IC / IB=20
Saturation Voltage, VCE(sat) -- V

Saturation Voltage, VCE(sat) -- V

2 2
--10 10

5 5

2 2
Collector-to-Emitter

Collector-to-Emitter
--1.0 1.0

5 5

2 2
--0.1 0.1

5 5

2 2
--0.01 0.01
--10 2 3 5 7 --100 2 3 5 7 --1000 2 3 10 2 3 5 7 100 2 3 5 7 1000 2 3
Collector Current, IC -- mA ITR08658 Collector Current, IC -- mA ITR08659
ASO PC -- Ta
10 1200
2SB892 / 2SD1207 2SB892 / 2SD1207
5 ICP=4A
Collector Dissipation, PC -- mW

3 IC=2A 1000
2
Collector Current, IC -- A

1m

1.0
800
s
10
0m

5 DC
10
s

3 op
ms

era 600
2 tio
n
0.1
400
5
3
2 200
0.01

5
(For PNP minus sign is omitted.) 0
3 5 7 1.0 2 3 5 7 10 2 3 5
7 100 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE -- V ITR08661 Ambient Temperature, Ta -- °C ITR08660

No.930-4/5
 2SB892 / 2SD1207

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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
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This catalog provides information as of December, 2008. Specifications and information herein are subject
to change without notice.

PS No.930-5/5