MEMS1082

Chapter 3-2 Semiconductor devices

Transistors and Amplifiers-BJT

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Bipolar Transistor Construction

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npn BJT

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Transistor Structure

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npn BJT

I E = IC + I B

VBE = VB − VE
VCE = VC − VE

Emitter is more heavily n-doped than collector

VC > VB > VE
Base-to-emitter pn junction is forward biased
Base-to-collector pn junction is reverse biased
Base is a very thin layer of p type region Department of Mechanical Engineering
Transistor as Current Amplifier
 The larger collector current IC is proportional to the base current IB according to
the relationship IC =βIB , or more precisely it is proportional to the base-emitter
voltage VBE . The smaller base current controls the larger collector current,
achieving current amplification.
 The analogy to a valve is sometimes helpful. The smaller current in the base acts
as a "valve", controlling the larger current from collector to emitter. A "signal" in
the form of a variation in the base current is reproduced as a larger variation in the
collector-to-emitter current, achieving an amplification of that signal.

β is about 100
Amplification factor

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pnp BJT Transistor

Very thin

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Transistor as Current Amplifier
 Constraints on Transistor Operation

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BJT packages

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Terminal characteristics of
a typical BJT

0.2 V when saturation

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Common emitter transistor circuit
Controlled
 Transistor Characteristic Curves by collector
circuit
ic is proportional to ib

0.2 V when saturation

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Transistors
 Transistor Operation
 Cut off (no collector current), useful for switch operation.
 In the active region (some collector current, more than a few tenths of a
volt above the emitter), useful for amplifier applications
 In saturation (collector a few tenths of a volt above emitter), large current
useful for "switch on" applications.

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Transistors
 Transistor Characteristic Curves

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Transistors
 Transistor Characteristic Curves

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Bipolar Transistor Switch
 Vin=0.7V

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Transistor Switch Example
 The base resistor is chosen small
enough so that the base current drives
the transistor into saturation. In this
example the mechanical switch is used
to produce the base current to close the
transistor switch to show the principles.
In practice, any voltage on the base
sufficient to drive the transistor to
saturation will close the switch and light
the bulb.
 There is no current to the base, so the
transistor is in the cut off condition with
no collector current. All the voltage
drop is across the transistor.

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Transistor Switch Example
 NPN Common Emitter Switch
For switching currents less than an ampere, the
transistor switch can be used. Instead of a mechanical
switch in the base circuit, an op-amp could be used.
When the switch is open, no current flows in the base
so the collector current is cut off. The resistor RB
must be small enough to drive the transistor to
saturation so that most of the voltage Vcc appears
across the load Rc.
In a configuration where the output is taken below the
load resistor, this kind of switch can function as an
inverting buffer in digital circuits.

A transistor switch with

For equal resistors, it collector resistor can serve
has a gain of -1, and is as an inverting buffer.
used in digital circuits
as an inverting buffer. Department of Mechanical Engineering
Transistor Switch Example
 Op-Amp Switching
If an op-amp is used instead
of a mechanical switch to
operate a transistor switch.
The diode is used for
protection of the base-emitter
junction in case the op-amp
swings to its negative supply
voltage.

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LED Switch

O V or 5V

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Darlington Pair

The emitter current of TR1 is the base current of TR2.

A change in base current of TR1 can give a change 100 times larger in its emitter current.
A change in the base current of TR2 has a similar effect on its emitter current.
Therefore there is an overall amplification of 100 x 100 = 10000 times.
This circuit is sometimes called the Super Alpha Pair.
It is often used as a power output stage.
The two transistors can come in the same package.

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Phototransistor and Optoisolator
An electronic device designed to
transfer electrical signals by
utilizing light waves to provide
coupling with electrical isolation
between its input and output

Planar (top) and silicone dome

(bottom) layouts - cross-section
through a standard dual in-line
package

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Guarantee a transistor in saturation

Q:

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Common emitter
npn BJT

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Common emitter
npn BJT current amplifier

 The Common Emitter Amplifier Circuit

This type of configuration is the most commonly used
circuit for transistor based amplifiers and which represents
the "normal" method of bipolar transistor connection.

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Common emitter
npn BJT current amplifier
I E = IC + I B
VC > VB > VE

 The collector current IC is proportional to the base current IB

according to the relationship IC =βIB
 β has a value between 20 and 200 for most general purpose
transistors

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Common emitter
npn BJT current amplifier

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BJT current
amplifier

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Common base
pnp BJT voltage amplifier

 Common base
The BASE connection is common to both the input signal AND the output signal with
the input signal being applied between the base and the emitter terminals. The
corresponding output signal is taken from between the base and the collector terminals
with the base terminal grounded. The input current flowing into the emitter is quite
large as its the sum of both the base current and collector current respectively
therefore, the collector current output is less than the emitter current input resulting in
a current gain for this type of circuit of "1" (unity) or less, in other words the common
base configuration "attenuates" the input signal.

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pnp BJT voltage amplifier

 This type of amplifier configuration is a non-inverting voltage amplifier circuit, in that

the signal voltages Vin and Vout are in-phase. This type of transistor arrangement is not
very common due to its unusually high voltage gain characteristics due to its high
ratio of output to input resistance or more importantly "load" resistance (RL) to "input"
resistance (Rin) giving it a value of "Resistance Gain". Then the voltage gain (Av for a
common base configuration

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Emitter Follower Circuit

a large Current gain

 This type of configuration is commonly known as a Voltage Follower or
Emitter Follower circuit.
 This type of bipolar transistor configuration is a non-inverting circuit in that the
signal voltages of Vin and Vout are in-phase. It has a voltage gain that is always
less than "1" (unity).

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Emitter Follower Switch
 NPN Emitter Follower Switch
The emitter follower can also be
used for switching. The resistor
RB must be small enough to drive
the transistor to saturation so that
most of the voltage Vcc appears
across the load.

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Angular Position of a Robotic
Scanner
 Photo-interrupter

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