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STPS40L45C: Low Drop Power Schottky Rectifier
STPS40L45C: Low Drop Power Schottky Rectifier
Description
A1
K Dual center tap Schottky barrier rectifier designed
A2 for high frequency switched mode power supplies
and DC to DC converters.
K Packaged in TO-220AB, TO-247 and D2PAK
these devices are intended for use in low voltage,
high frequency inverters, free-wheeling and
polarity protection applications.
A2
A1
Table 1. Device summary
D2PAK
STPS40L45CG IF(AV) 2 x 20 A
VRRM 45 V
Tj (max) 150° C
VF(max) 0.49 V
A2
A2 K
A1 K A1
TO-220AB TO-247
STPS40L45CT STPS40L45CW
Features
Low forward voltage drop meaning very small
conduction losses
Low switching losses allowing high frequency
operation
Avalanche capability specified
1 Characteristics
Tj = 25° C 0.6 mA
IR(1) Reverse leakage current VR = VRRM
Tj = 125° C 140 280 mA
Tj = 25° C IF = 20 A 0.53
Tj = 125° C IF = 20 A 0.42 0.49
VF(1.) Forward voltage drop V
Tj = 25° C IF = 40 A 0.69
Tj = 125° C IF = 40 A 0.6 0.7
1. Pulse test: tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation:
P = 0.28 x IF(AV) + 0.0105 IF2(RMS)
Figure 1. Average forward power dissipation Figure 2. Average forward current versus
versus average forward current (per diode) ambient temperature ( = 0.5, per diode)
PF(av)(W) IF(av)(A)
16 22
δ = 0.1 δ = 0.2 δ = 0.5 20
14
δ = 0.05 18 Rth(j-a)=Rth(j-c)
12 16
10 14
δ=1 12
8
10 Rth(j-a)=15°C/W
6 8
T
4 6 T
4
2 IF(av) (A) δ=tp/T tp 2 Tamb(°C)
δ=tp/T tp
0 0
0 2 4 6 8 10 12 14 16 18 20 22 24 0 25 50 75 100 125 150
Figure 3. Normalized avalanche power derating Figure 4. Normalized avalanche power derating
versus pulse duration versus junction temperature
PARM(tp) PARM(Tj)
PARM(1 µs) PARM(25 °C)
1 1.2
0.1 0.8
0.6
0.01 0.4
0.2
tp(µs) Tj(°C)
0.001 0
0.01 0.1 1 10 100 1000 25 50 75 100 125 150
Figure 5. Non repetitive surge peak forward Figure 6. Relative variation of thermal
current versus overload duration (maximum impedance junction to case versus pulse
values, per diode) duration
IM(A) Zth(j-c)/Rth(j-c)
250 1.0
225
200 0.8
175
δ = 0.5
150 0.6
Tc=25°C
125
100 0.4 δ = 0.2
75 Tc=75°C
δ = 0.1 T
50 IM 0.2
t Tc=125°C
25 t(s) Single pulse tp(s)
δ=0.5 δ=tp/T tp
0 0.0
1E-3 1E-2 1E-1 1E+0 1E-4 1E-3 1E-2 1E-1 1E+0
Figure 7. Reverse leakage current versus Figure 8. Junction capacitance versus reverse
reverse voltage applied (typical values, per voltage applied (typical values, per diode)
diode)
C(nF)
IR(mA)
10.0
1E+3 F=1MHz
Tj=25°C
Tj=150°C
1E+2
Tj=125°C
1E+1 1.0
Tj=75°C
1E+0
1E-1 Tj=25°C
VR(V)
0.1
VR(V) 1 10 100
1E-2
0 5 10 15 20 25 30 35 40 45
Figure 9. Forward voltage drop versus forward Figure 10. Thermal resistance junction to
current (maximum values, per diode) ambient versus copper surface under tab
IFM(A) Rth(j-a) (°C/W)
1000 80
70 Epoxy printed circuit board FR4,
copper thickness: 35 µm
60
100 Typical values 50
Tj=150°C
40
Tj=125°C
30
10
Tj=75°C 20
Tj=25°C
10 S(Cu) (cm²)
VFM(V)
1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 5 10 15 20 25 30 35 40
2 Package Information
E A
Resin gate
∅P F
0.5 mm max.
protrusion(1)
Q
H1
D D1
L20 L30
b1 L1 J1
L
b
e Resin gate c
0.5 mm max.
protrusion(1)
e1
(1) Resin gate position accepted in each of the two
position shown as well as the symmetrical opposites
E
C2
L2
D
L
L3
A1
B2
C R
B
A2
M
* V2
12.2 5.08
2.54
1.60
3.50
9.75
A Heat-sink plane
E
∅P
S ∅R
L2
L1
L b1
b2
1 2 3 3 2 1
b c
A1 BACK VIEW
e
3 Ordering Information
4 Revision history
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