STW77N60M5

N-channel 600 V, 0.033 Ω, 69 A, MDmesh™ V Power MOSFET

in TO-247

Features
VDSS
Order code RDS(on) max. ID
@Tjmax.
STW77N60M5 650 V < 0.038 Ω 69 A

■ Higher VDSS rating

■ Higher dv/dt capability 3
2
■ Excellent switching performance 1
■ Easy to drive TO-247
■ 100% avalanche tested

Application
Switching applications
Figure 1. Internal schematic diagram
Description
$
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
'
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior 3
power density and outstanding efficiency.

!-V

Table 1. Device summary

Order code Marking Package Packaging

STW77N60M5 77N60M5 TO-247 Tube

October 2011 Doc ID 022317 Rev 1 1/14

www.st.com 14
Contents STW77N60M5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuits .............................................. 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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STW77N60M5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate- source voltage 25 V

ID Drain current (continuous) at TC = 25 °C 69 A
ID Drain current (continuous) at TC = 100 °C 41.5 A
IDM (1) Drain current (pulsed) 276 A
PTOT Total dissipation at TC = 25 °C 400 W
Max current during repetitive or single pulse avalanche
IAR 15 A
(pulse width limited by TJMAX)
Single pulse avalanche energy
EAS 2000 mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
dv/dt (2) Peak diode recovery voltage slope 15 V/ns
Tstg Storage temperature - 55 to 150 °C
Tj Max. operating junction temperature 150 °C
1. Pulse width limited by safe operating area
2. ISD ≤ 69 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS, VDD = 400 V

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 0.31 °C/W

Rthj-amb Thermal resistance junction-ambient max 50 °C/W
Tl Maximum lead temperature for soldering purpose 300 °C

Doc ID 022317 Rev 1 3/14

Electrical characteristics STW77N60M5

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS ID = 1 mA, VGS = 0 600 V
breakdown voltage
VDS = 600 V
Zero gate voltage 1 µA
IDSS VDS = 600 V, TC=125 °C
drain current 100 µA
VGS = 0
Gate-body leakage
IGSS VGS = ± 25 V, VDS = 0 100 nA
current
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
Static drain-source on
RDS(on) VGS = 10 V, ID = 34.5 A 0.033 0.038 Ω
resistance

Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Input capacitance
Ciss 9800 pF
Output capacitance VDS = 100 V, f = 1 MHz,
Coss - 200 - pF
Reverse transfer VGS = 0
Crss 6 pF
capacitance
Equivalent
Co(tr)(1) capacitance time VGS = 0, VDS = 0 to 480 V - 631 - pF
related
Equivalent
Co(er)(2) capacitance energy VGS = 0, VDS = 0 to 480 V - 198 - pF
related
Intrinsic gate
RG f = 1 MHz open drain - 1.2 - Ω
resistance
Qg Total gate charge VDD = 520 V, ID = 34.5 A, 185 nC
Qgs Gate-source charge VGS = 10 V - 45 - nC
Qgd Gate-drain charge (see Figure 16) 65 nC
1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS.
2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS.

4/14 Doc ID 022317 Rev 1

STW77N60M5 Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(V) Voltage delay time VDD = 400 V, ID = 40 A, 160 ns

tr(V) Voltage rise time RG = 4.7 Ω, VGS = 10 V 22 ns
- -
tf(i) Current fall time (see Figure 17) 20 ns
tc(off) Crossing time (see Figure 20) 40 ns

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current 69 A

-
ISDM (1) Source-drain current (pulsed) 276 A
VSD (2) Forward on voltage ISD = 69 A, VGS = 0 - 1.5 V
trr Reverse recovery time ISD = 69 A, 570 ns
Qrr Reverse recovery charge di/dt = 100 A/µs - 14 µC
IRRM Reverse recovery current VDD = 100 V (see Figure 17) 48 A
ISD = 69 A,
trr Reverse recovery time 700 ns
di/dt = 100 A/µs
Qrr Reverse recovery charge - 20 µC
VDD = 100 V, Tj = 150 °C
IRRM Reverse recovery current 58 A
(see Figure 17)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Doc ID 022317 Rev 1 5/14

Electrical characteristics STW77N60M5

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance
AM04964v2
ID
(A)

10µs
100
is
R rea
)
on
ax a
S(
m this

D
by n
d ni

100µs
ite io
m at
Li per

10
O

1ms
Tj=150°C 10ms
1 Tc=25°C
Single
pulse
0.1
0.1 1 10 100 VDS(V)

Figure 4. Output characteristics Figure 5. Transfer characteristics

AM04965v1 ID AM04966v1
ID
(A) VGS=10V (A)
VDS=25V
140 140
7V
120 120

100 100

80 80

60 60
6V
40 40

20 20
5V
0 0
0 5 10 15 20 25 30 VDS(V) 0 2 4 6 8 10 VGS(V)

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance

AM04969v1 AM04968v1
VGS RDS(on)
(V) (Ω)
VGS VGS=10V
12 VDS VDD=520V
500 0.035
ID=34.5A
10
400 0.030
8
300 0.025
6
200 0.020
4

100 0.015
2

0 0 0.01
0 50 100 150 200 Qg(nC) 0 10 20 30 40 50 60 ID(A)

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STW77N60M5 Electrical characteristics

Figure 8. Capacitance variations Figure 9. Output capacitance stored energy

AM04970v2 Eoss AM04971v2
C
(pF) (µJ)
40
100000
35
10000 Ciss 30

25
1000
20
Coss
100 15
10
10
Crss 5
1 0
0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V)

Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature temperature
VGS(th) AM04972v1 RDS(on) AM05501v1
(norm) (norm)
1.10 2.1
ID= 34.5 A
1.9
VGS= 10 V
1.00 1.7

1.5

0.90 1.3

1.1

0.80 0.9

0.7
0.70 0.5
-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 125 TJ(°C)

Figure 12. Source-drain diode forward Figure 13. Normalized BVDSS vs temperature
characteristics
AM04974v1 AM04967v1
VSD BVDSS
(V) (norm)
TJ=-50°C
1.2 1.07
ID = 1mA
1.05
1.0
1.03
0.8
TJ=25°C 1.01
0.6
0.99
TJ=150°C
0.4 0.97

0.2 0.95

0 0.93
0 10 20 30 40 50 ISD(A) -50 -25 0 25 50 75 100 TJ(°C)

Doc ID 022317 Rev 1 7/14

Electrical characteristics STW77N60M5

Figure 14. Switching losses vs gate resistance

(1)

AM04973v1
E (μJ)
Eoff
1600 VDD=400V
VGS=10V
1400 TJ=25°C
ID=40A
1200
Eon
1000

800

600

400

200
0
0 10 20 30 40 RG(Ω)
1. Eon including reverse recovery of a SiC diode

8/14 Doc ID 022317 Rev 1

STW77N60M5 Test circuits

3 Test circuits

Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. μF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test
switching and diode recovery times circuit

L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
V(BR)DSS )D
#ONCEPTWAVEFORMFOR)NDUCTIVE,OAD4URN OFF

VD 6DS )D

4DELAY OFF
OFF

IDM
6GS

6GS ON

ID

6GS)T

VDD VDD 6DS )D

6DS
4R ISE 4FALL

4CROSS OVER

AM01472v1 !-V

Doc ID 022317 Rev 1 9/14

Package mechanical data STW77N60M5

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

10/14 Doc ID 022317 Rev 1

STW77N60M5 Package mechanical data

Table 8. TO-247 mechanical data

mm
Dim.
Min. Typ. Max.

A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.50

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Package mechanical data STW77N60M5

Figure 21. TO-247 drawing

0075325_F

12/14 Doc ID 022317 Rev 1

STW77N60M5 Revision history

5 Revision history

Table 9. Document revision history

Date Revision Changes

04-Oct-2011 1 First release.

Doc ID 022317 Rev 1 13/14

 STW77N60M5

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