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Physics of VLSI Devices (ECE-5018)

Digital Assignment - II
1. (a) In the space below, sketch the equilibrium band diagram resulting from bringing together
the illustrated metal and lightly doped semiconductor indicating the Fermi level; the
conduction band and valence band offsets from the Fermi level at the metal-semiconductor
interface in terms of qφm qφs, qχ and/or Eg; any band-bending in the semiconductor in terms
of qφm qφs, qχ and/or Eg; and (qualitatively) any charge depletion or accumulation layer.
Assume no interface traps. (b) Is this a Schottky contact or an ohmic contact?

2. (a) calculate the built-in potential φbi of a Si p-n junction operating at 300 K for Na = 1014
and 1019 cm-3, with Nd = 1014,1015,1016, 1017,1018, and 1019 cm-3 in each case, and plot φbi vs.
Nd. (b) Plot the maximum electric field E0 vs. Nd for the junctions described in (a).
3. An abrupt Si p-n junction has Na = 1017 cm-3 on the p side and Nd = 1016 cm-3 on the n side. At
300 K, (a) calculate the Fermi levels, draw an equilibrium band diagram, and find φbi from
the diagram; (b) compare the result from (a) with φbi calculated from the expression we
derived.
4. Boron is implanted into an n-type Si sample (Nd = 1016 cm-3), forming an abrupt junction of
square cross section with area = 2 x 10-3 cm2. Assume that the acceptor concentration in the
p-type region is Na = 4 x 1018 cm-3. Calculate φbi, xn0, xp0, Q+, and E0 for this junction at
equilibrium (300 K).
5. In a p+n junction, the n side has a donor concentration 1016 cm-3. If ni = 1010 cm-3, the relative
dielectric constant ϵr = 12, Dn = 50 cm2/s, Dp = 20 cm2/s, and the electron and hole minority
carriers have lifetimes τ = 100 ns and 50 ns, respectively, and a forward bias of 0.6 V,
calculate the hole diffusion current density 2 µm from the depletion edge on the n side. If
we double the p+ doping, what effect will it have on this hole diffusion current?
6. A Si p+n junction has a donor doping of 5 X 10 16 cm-3 on the n side and a cross-sectional area
of 10-3 cm2. If τp = 1 µs and Dp = 10 cm2/s, calculate the current
with a forward bias of 0.5 V at 300 K.
7. A Si p-n junction with cross-sectional area A = 0.001 cm2 is formed with Na = 1015 cm-3, Nd =
1017 cm-3. Calculate:
(a) Built-in potential, φbi.
(b) Space-charge width at equilibrium (zero bias).
(c) Current with a forward bias of 0.5 V. Assume that the current is diffusion
dominated. Assume µn = 1500 cm2/V-s, µp = 450 cm2/V-s, τn = τp = 2.5 ms.
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Which carries most of the current, electrons or holes, and why? If you wanted
to double the electron current, what should you do?
8. A Si n+p junction has an area of 5 x 5 µm. Calculate the total junction capacitance associated
with this junction at an applied reverse bias of 2 V. Assume that the n+ region is doped 1020
cm-3 and the p doping is 1 X 1016 cm-3. If we forward bias this junction 0.5 V, what is the
electric field far from the junction on the p side, assuming a hole mobility of 250 cm2/V-s, an
electron mobility of 100 cm2/V-s, and a reverse saturation current density of 1 nA/cm2 for
this ideal diode?
9. Calculate the capacitance for the following Si n+p junction. Na = 1015 cm-3
Area = 0.001 cm2 Reverse bias = 1,5, and 10 V. Plot 1/C2 vs. Vr. Demonstrate that the slope
yields Na. Repeat calculations for Na = 1017 cm-3. Since the doping is not specified on the n+
side, use a suitable approximation.
10. We have a symmetric p-n silicon junction (Na = Nd= 1017 cm-3). If the peak electric field in the
junction at breakdown is 5 x 105 V/cm, what is the reverse breakdown voltage in this
junction?
11. We deposit a metal with a work function of 4.6 e V on Si (electron affinity of 4 eV)
and acceptor doping level of 1018 cm-3. Draw the equilibrium band diagram and
mark off the Fermi level, the band edges, and the vacuum level. Is this a Schottky
or ohmic contact, and why? By how much should the metal work function be altered
to change the type of contact? Explain with reference to the band diagram.
12. A Schottky barrier is formed between a metal having a work function of 4.3 eV
and p-type Si (electron affinity = 4 eV). The acceptor doping in the Si is 10 17 cm-3.
(a) Draw the equilibrium band diagram, showing a numerical value for Schottky barrier.
(b) Draw the band diagram with 0.3 V forward bias. Repeat for 2 V reverse bias.

13. Calculate the VT of a Si-P-channel MOS transistor for an n+-polysilicon gate with
silicon oxide thickness = 50 Å, Nd = 1 x 1018 cm- 3 and a fixed charge of 2 X 1010 q
C/cm2. Is it an enhancement- or depletion-mode device? What B dose is required to
change the VT to 0 V? Assume a shallow B implant.
14. A Si MOS capacitor has the high-frequency C–V curve shown below normalized to
the capacitance in strong accumulation. Determine the oxide thickness and substrate
doping assuming gate-to-substrate work function difference of-0.35 V.
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15. For a long channel n-MOSFET with VT = 1V, calculate the Vc required for an ID(sat.) of
0.1 mA and VD(sat.) of 5 V. Calculate the small-signal output conductance g and the
transconductance gm(sat.) at VD = 10 V. Sketch the cross section of this MOSFET, and
schematically show the inversion charge and depletion charge distributions for VD =
1V, 5 V, and 10 V. Recalculate the new I D for VG - VT = 3 V and VD = 4 V.
16. Calculate the VT of a Si n-channel MOSFET for a gate-to-substrate work function
difference φms = -1.5 eV, gate oxide thickness = 100 A, NA = 1018 cm-3, and fixed oxide
charge of 5 X 1010 q C/cm2, for a substrate bias of -2.5 V. At VT, what are the electron
and hole concentrations at the oxide-Si interface and deep in the substrate? Sketch a
labeled band diagram normal to the surface at VT, showing the Fermi potential.
17. Calculate the VT of a Si n-channel MOSFET for an n+-polysilicon gate with gate oxide
thickness = 100 A, NA = 1018 cm-3, and a fixed oxide charge of 5 X 1010 q C/cm2.
18. For a MOSFET with VT = 1V and W = 50 μm, L = 2 μm, calculate the drain current at
VG = 5 V, VD = 0.1 V. Repeat for VG = 3 V, VD = 5 V. Assume an electron channel
mobility μn = 200 cm2/V-s, and the substrate is connected to the source.
19. (a) Calculate the maximum space charge width and the maximum space charge
density (in p-type silicon, gallium arsenide, and germanium semiconductors of an
MOS structure. Let T = 300 K and assume NA = 1016 cm-3. (h) Repeat part (a) if T = 200
K.
20. Determine the metal-semiconductor work function difference φms in an MOS
structure with p-type silicon for the case when the gate is (a) aluminum. (b) n+
polysilicon. and (c) p+ polysilicon. Let NA = 6 x 1015 cm-3.
21. Consider an n+ polysilicon-silicon dioxide-n-type silicon MOS capacitor. Let
Nd = 1015 cm-3. Calculate the flat-band voltage for (a) Tox = 500 Å when fixed oxide
charge is (i) 1010 cm-2, (ii) 1011 cm-2, and (iii)5 x 1011 cm-2 (b). Repeat (a) when Tox =
250 A.
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22. Consider an aluminum gate-silicon dioxide-p-type silicon MOS structure with T ox =

450 Å. The silicon doping is NA = 2 x 1016 cm-3, and the flat-band voltage is VF = = -1.0
V. Determine the fixed oxide charge.
23. An MOS transistor is fabricated on a p-type silicon substrate with N A = 2 x 1015 cm-3.
The oxide thickness is Tox = 450 Å and the equivalent fixed oxide charge is Qox = 2 x
1011 cm-2. Calculate the threshold voltage for (a) an aluminum gate, (b) an n+
polysilicon gate, and (c) a p+ polysilicon gate.
24. An MOS transistor is fabricated on a n-type silicon substrate with N D = 2 x 1015 cm-3.
The oxide thickness is Tox = 450 Å and the equivalent fixed oxide charge is Qox = 2 x
1011 cm-2. Calculate the threshold voltage for (a) an aluminum gate, (b) an n+
polysilicon gate, and (c) a p+ polysilicon gate.
25. A 400 Å oxide is grown on p-type silicon with NA = 5 x 1015 cm-3. The flat-band voltage
is -0.9 V. Calculate the surface potential at the threshold inversion point as well as
the threshold voltage assuming negligible oxide charge. Also find the maximum
space charge width for this device.
26. An MOS transistor with an aluminum gate is fabricated on a p-type silicon substrate.
The oxide thickness is Tox = 750 Å, and the equivalent fixed oxide charge is 1011 cm-2.
The measured threshold voltage is VT = +0.80 V. Determine the p-type doping
concentration.
27. An MOS transistor with an aluminum gate is fabricated on a n-type silicon substrate.
The oxide thickness is Tox = 750 Å, and the equivalent fixed oxide charge is 1011 cm-2.
The measured threshold voltage is VT = -1.50 V. Determine the n-type doping
concentration.
28. An Al-silicon dioxide-silicon MOS capacitor has an oxide thickness of 450 Å and a
doping of NA = 1015 cm-3. The fixed oxide charge density is 3 x 1011 cm-2. Calculate (a)
the flat-band voltage and (b) the threshold voltage. Sketch the electric field through
the structure at the onset of inversion.
29. An ideal n-channel MOSFET has the following parameters:
W = 30 μm, μn = 450 cm2/V-s,
L = 2 μm, Tox = 350 Å, VT = +0.80 V
(a)Plot ID versus VDS for 0 ≤ VDS ≤ 5V and for VGS = 0. I, 2, 3, 4, and 5 V. Indicate on
each curve the VDS (sat) point. (b) Plot [ID(sat)]1/2 versus VGS for 0 ≤ VGS ≤ 5V. (c) Plot lD
versus VGS for VDS = 0.1 V and for O ≤ VGS ≤ 5V.
30. An ideal p-channel MOSFET has the following parameters:
W = 15 μm, μn = 300 cm2/V-s,
L = 1.5 μm, Tox = 350 Å, VT = -0.80 V
(a)Plot ID versus VDS for 0 ≤ VDS ≤ 5V and for VGS = 0. I, 2, 3, 4, and 5 V. Indicate on
each curve the VDS (sat). (b) Plot lD versus VGS for VDS = 0.1 V and for O ≤ VGS ≤ 5V.
31. One curve of an n-channel MOSFET is characterized by the following parameters:
ID(sat) = 2 x 10-4 A, VDS(sat) = 4 V, and VT = 0.8 V. (a) What is the gate voltage?
(b) What is the value of the conduction parameter? (c) If VG = 2 V and VDS = 2V,
determine ID. (d) If VG = 3 V and VDS = 1 V, determine ID.
32. (a) An ideal n-channel MOSFET has an inversion carrier mobility μ n = 525 cm2/V-s, a
threshold voltage VT = +0.75 V, and an oxide thickness Tox, = 400 Å. When biased in
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the saturation region, the required rated current is ID(sat) = 6 mA when VGS = 5 V.
Determine the required W/L ratio. (b) A p-channel MOSFET has the same
requirements when VGS = 5V and has the same parameters as part (a) except μp =
300 cm2/V-s, and VT = -0.75 V. Determine the required W/L ratio.
33. An n-channel MOSFET has the following parameters:
Tox = 400 Å, NA = 5 x 1016 cm-3
VFB = -0.5 V, L = 2 μm
W = 10 μm, μn = 450 cm2/V-s.
Calculate the threshold voltage for the following values of source-to-body voltage:
VSB = 0, 1 V, 2 V and 4 V.
34. Consider a p-channel MOSFET with Tox = 600 Å and ND = 5 x 1016 cm-3. Determine the
body-to-source voltage VSB such that the shift in threshold voltage (ΔVT) from the VSB
= 0 is ΔVT = -1.5 V.
35. An NMOS device has the following parameters: n+ poly gate, T ox = 400 Å. NA =
1015 cm-3 and fixed oxide charge Qox = 5 x 1010 cm-2. (a) Determine VT. (b) Is it
possible to apply a VSB voltage such that VT = 0? If so, what is the value of VSB?

Q1: 19PHD0144, 20MVD0001, 17MVD0028, 20MVD0062

Q2: 20MVD0002, 20MVD0003, 20MVD0144, 20MVD0064

Q3: 20MVD0004, 20MVD0005, 20MVD0065, 20MVD0066

Q5: 20MVD0006, 20MVD0007, 20MVD0067, 20MVD0068

Q6: 20MVD0008, 20MVD0009, 20MVD0069, 20MVD0070

Q7: 20MVD0010, 20MVD0011, 20MVD0071, 20MVD0072

Q8: 20MVD0012, 20MVD0013, 20MVD0073, 20MVD0074

Q9: 20MVD0014, 20MVD0139, 20MVD0075, 20MVD0076

Q10: 20MVD0016, 20MVD0017, 20MVD0077, 20MVD0078

Q11: 20MVD0018, 20MVD0019, 20MVD0079, 20MVD0080

Q12: 20MVD0020, 20MVD0021, 20MVD0081, 20MVD0082

Q13: 20MVD0022, 20MVD0023, 20MVD0083, 20MVD0084

Q14: 20MVD0024, 20MVD0025, 20MVD0085, 20MVD0086

Q15: 20MVD0026, 20MVD0027, 20MVD0087, 20MVD0088

Q16: 20MVD0028, 20MVD0029, 20MVD0135, 20MVD0090

Q17: 20MVD0030, 20MVD0031, 20MVD0091, 20MVD0092

Q18: 20MVD0032, 20MVD0033, 20MVD0093, 20MVD0094

Q19: 20MVD0034, 20MVD0035, 20MVD0095, 20MVD0096

Q20: 20MVD0036, 20MVD0037, 20MVD0097, 20MVD0098

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Q21: 20MVD0038, 20MVD0039, 20MVD0099, 20MVD0100

Q22: 20MVD0040, 20MVD0041, 20MVD0101, 20MVD0102

Q23: 20MVD0138, 20MVD0043, 20MVD0103, 20MVD0104

Q24: 20MVD0137, 20MVD0045, 20MVD0145, 20MVD0106

Q25: 20MVD0046, 20MVD0047, 20MVD0107, 20MVD0108

Q26: 20MVD0048, 20MVD0049, 20MVD0109, 20MVD0110

Q27: 20MVD0050, 20MVD0051, 20MVD0134, 20MVD0112

Q28: 20MVD0052, 20MVD0053, 20MVD0113, 20MVD0133

Q29: 20MVD0136, 20MVD0055, 20MVD0115, 20MVD0116

Q30: 20MVD0056, 20MVD0057, 20MVD0117, 20MVD0118

Q31: 20MVD0058, 20MVD0059, 20MVD0119, 20MVD0120

Q32: 20MVD0060, 20MVD0061, 20MVD0132, 20MVD0122

Q33: 20MVD0123, 20MVD0124, 20MVD0125, 20MVD0126

Q34: 20MVD0140, 20MVD0141, 20MVD0142, 20MVD0143

Q35: 20MVD0131, 20MVD0130, 20MVD0129, 20MVD0128, 20MVD0127