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PELSDenverSlides PDF
PELSDenverSlides PDF
NS NT
is(t) i(t)
Basic circuit +
L Cs +
dc Resistive
source + vs(t) Cp v(t) load
–
vg(t) R
– –
Cp Cp
Switch
output
voltage Tank current and output
spectrum voltage are essentially
fs 3fs 5fs
sinusoids at the switching
f
frequency fs.
Resonant Output can be controlled
tank
response by variation of switching
frequency, closer to or
away from the tank
fs 3fs 5fs f resonant frequency
Tank
current
spectrum
fs 3fs 5fs f
Can optimize performance at one operating point, but not with wide
range of input voltage and load power variations
Significant currents may circulate through the tank elements, even
when the load is disconnected, leading to poor efficiency at light load
Quasi-sinusoidal waveforms exhibit higher peak values than
equivalent rectangular waveforms
These considerations lead to increased conduction losses, which can
offset the reduction in switching loss
Resonant converters are usually controlled by variation of switching
frequency. In some schemes, the range of switching frequencies can
be very large
Complexity of analysis
Switch
output
voltage Tank current and output
spectrum voltage are essentially
fs 3fs 5fs
sinusoids at the switching
f
frequency fs.
Resonant Neglect harmonics of
tank
response switch output voltage
waveform, and model only
the fundamental
fs 3fs 5fs f component.
Tank
current Remaining ac waveforms
spectrum can be found via phasor
analysis.
fs 3fs 5fs f
4
NS Vg
Fundamental component
is(t) Vg vs1(t)
1
+ vs(t)
t
vg + 2 vs(t)
– 2
–
1
– Vg
Switch network
NS Is1
is(t)
1
+ ig(t)
vg + 2 vs(t)
– 2
– s t
1 is(t)
Switch network s
current.
Fundamentals of Power Electronics 14 Chapter 19: Resonant Conversion
Switch network: equivalent circuit
+ is1(t) =
Is1 sin (st – s)
vs1(t) =
vg 2I s1 +
cos ( s) 4Vg –
sin (st)
–
– –
NR NF
Rectifier network Low-pass dc –V
filter load
network
R
V 4 vR1(t)
vR(t) V
fundamental
iR(t) s t iR1(t) s t
vR1(t)
i R1(t) =
Re
–V
Re = 82 R
R R
iR(t) s t
–V
R
iR1(t) I
Rectifier input port:
+ +
Fundamental components of
current and voltage are 2
vR1(t) Re I R1 V R
sinusoids that are in phase
Hence rectifier presents a – –
resistive load to tank network
Re = 82 R
Effective resistance Re is
Re = 82 R = 0.8106R
Transfer function
H(s)
is1(t) iR1(t)
+
+ Zi Resonant
vs1(t) network vR1(t) Re
–
Transfer function
H(s)
is1(t) iR1(t) I
+ +
+ + Zi Resonant 2
Vg network vR1(t) Re I R1 V R
– –
– –
vs1(t) =
2I s1 Re = 82 R
cos ( s) 4Vg
sin (st)
Eliminate Re:
M= V = R 2
1 H(s) 4
Vg Re s = j s
V = H(s)
Vg s = j s
V I I R1 VR1 Vs1
I I R1 VR1 Vs1 Vg
V = H(s)
Vg s = j s
transfer function
H(s)
is(t) iR(t) i(t)
+
+ L Cs +
dc
source +– vs(t) vR(t) v(t) R
vg(t)
–
–
–
NS NT NR NF
switch network resonant tank network rectifier network low-pass dc
filter load
network
L C
is1(t) iR1(t) I
+ +
+ + Zi 2
Vg vR1(t) Re I R1 V R
– –
– –
2I s1
vs1(t) = Re = 82 R
series tank network
cos ( s) 4Vg
sin (st)
Re Re 1 = 2 f
H(s) = =
Z i(s) R + sL + 1
0 = 0
e
LC
sC L
s R0 = M = H( js) = 1
Q e 0 C 2
= R 1+Q 2 1 –F
1+ s + s
2
Qe = 0 e
F
Q e 0 0 Re
Fundamentals of Power Electronics 25 Chapter 19: Resonant Conversion
Construction of Zi
|| Zi ||
1
C
L
f0
R0
Qe = R0 / Re
Re
|| H ||
1
Qe = Re / R0
Re / R0
f0
R /
e
C L
R e
switch
output Example: excitation of
voltage tank by third harmonic of
spectrum switching frequency
fs 3fs 5fs f Can now approximate vs(t)
by its third harmonic:
resonant
tank 4Vg
response vs(t) vsn(t) = n sin (nst)
fs 3fs 5fs f
Result of analysis:
tank
current V H( jns)
spectrum M= = n
Vg
fs 3fs 5fs f
M
1
1
3
1
5
etc.
1 f 1 f
5 0 3 0 f0 fs
4
I iR1(t)
fundamental
Fundamental component of iR(t):
vR1(t) s t i R1(t) = 4I
sin (st – R)
vR1(t)
i R1(t) =
Re
2
Re = R
8
R
Fundamentals of Power Electronics 31 Chapter 19: Resonant Conversion
Effective resistance Re
Again define
vR1(t) VR1
Re = =
i R1(t) 4I
In steady state, the dc output voltage V is equal to the average value
of | vR |:
T s/2
V= 2 2V
VR1 sin (st – R) dt = R1
TS 0
iR1(t) I
+ +
vR1(t) Re 2V + V
R1 – R
– –
2
Re = R
8
is1(t) iR1(t) I
+ +
L
+ + Zi 2 +
Vg C vR1(t) Re V R1 V R
– – –
– –
2
vs1(t) = Re = R
2I s1 8
parallel tank network
cos ( s) 4Vg
sin (st)
M = V = 82 H(s) H(s) =
Z o(s)
Vg s = j s sL
Z o(s) = sL || 1 || Re
sC
Fundamentals of Power Electronics 34 Chapter 19: Resonant Conversion
Construction of Zo
|| Zo ||
Re
Qe = Re / R0
R0
f0
L 1
C
|| H ||
Re / R0
Qe = Re / R0
1
f0
1
2LC
8 Z o(s)
M= 2 = 82 1
sL s = j s 1+ s + s 2
Q e 0 0
s = j s
= 82 1
2
1–F 2 2
+ F
Qe
8 Re R
At resonance, this becomes M= 2 =
R0 R0
• PRC can step up the voltage, provided R > R0
• PRC can produce M approaching infinity, provided output current is
limited to value less than Vg / R0
– is(t)
Q2 Q4
D2 D4
Operation below
resonance: tank input || Zi ||
1
impedance Zi is C
L
dominated by tank
capacitor.
∠Zi is positive, and f0
R0
tank input current
Qe = R0 /Re
leads tank input Re
voltage.
Zero crossing of the
tank input current
waveform is(t) occurs
before the zero
crossing of the voltage
vs(t).
vs1(t)
Vg
vs(t)
+
t L C
Q1 Q3
vds1(t) D1 D3
+
iQ1(t) –
– Vg
vs(t)
is(t)
– is(t)
Q2 Q4
D2 D4
Ts
+ t
2
t Ts t
2
vds1(t) Vg
+
Q1 Q3 L C
vds1(t) D1 D3
+
t iQ1(t) –
ids(t) vs(t)
– is(t)
Ts Q2 Q4
+ t D2 D4
2
t Ts t
Conducting Q1 D1 2 Q2 D2
devices: Q4 D4 Q3 D3
Q1 turns on while D2 is conducting. Stored
“Hard” “Soft” charge of D2 and of semiconductor output
turn-on of turn-off of capacitances must be removed. Transistor
Q1, Q4 Q1, Q4
turn-on transition is identical to hard-
switched PWM, and switching loss occurs.
– is(t)
Q2 Q4
D2 D4
Operation above
resonance: tank input || Zi ||
1
impedance Zi is C
L
dominated by tank
inductor.
∠Zi is negative, and f0
R0
tank input current lags
Qe = R0 /Re
tank input voltage. Re
Zero crossing of the
tank input current
waveform is(t) occurs
after the zero crossing
of the voltage vs(t).
+
Q1 Q3 L C
vds1(t) D1 D3
+
iQ1(t) –
vs(t)
– is(t)
Q2 Q4
D2 D4
+
Q1 Q3 L C
vds1(t) D1 D3
+
iQ1(t) –
vs(t)
– is(t)
Q2 Q4
D2 D4
• Introduce small
capacitors Cleg across
each device (or use
device output
capacitances).
• Introduce delay
between turn-off of Q1
and turn-on of Q2.
Tank current is(t) charges and
discharges Cleg. Turn-off transition
becomes lossless. During commutation
interval, no devices conduct.
So zero-voltage switching exhibits low
switching loss: losses due to diode
stored charge and device output
capacitances are eliminated.
Fundamentals of Power Electronics 65 Chapter 19: Resonant Conversion
19.4 Load-dependent properties
of resonant converters
with
Voc = H ( js) vs( js)
Voc Voc = H vs v
H ( js) vs( js) Voc 2
I sc = =
Z o0( js) Z o0( js)
This result is valid provided that (i) the resonant network is purely reactive,
and (ii) the load is purely resistive.
Fundamentals of Power Electronics 70 Chapter 19: Resonant Conversion
Matching ellipse
to application requirements
|| io || || io ||
50
inverter characteristic
inverter characteristic 2A
40
0W
d
d loa
lamp characteristic t che
ma
|| vo || 2kV || vo ||
Transfer function
H(s)
is(t) i(t)
Z (s) Effective
1+ R 1 + o0 sinusoidal Resonant
Z o0(s) R source network + Effective
Z i(s) = Z i0(s) = Z i(s) + resistive
1+ R Z o(s) Zi Zo v(t)
vs1(t) – load
Z o(s) 1 + R
R Purely reactive –
where
v vi vo vo
Z i0 = i Z i = Z o0 = Z o =
ii R 0 ii R
– io vi short circuit
– io vi open circuit
Series 1
L Cs C
Z i0(s) = sL + 1
s || Zi ||
L sC s
Zi Zo || Zi0 ||
Z i(s) =
f
Parallel 1
C
L p
Z i0(s) = sL
L
Zi Zo || Zi ||
Cp
Z i(s) = sL + 1
|| Zi0 || sC p
f
LCC 1
C +
1
Cs Z i0(s) = sL + 1
s
L C
p
1
C L sC s
s
|| Zi ||
Zi Zo
Cp || Zi0 || Z i(s) = sL + 1 + 1
sC p sC s
f
Theorem 1: If the tank network is purely reactive, then its input impedance
|| Zi || is a monotonic function of the load resistance R.
R
ing
with increasing R .
s
rea
inc
1
• at a given frequency f, || Zi ||
inc
C
rea
s
sin
is a monotonic function of R.
gR
• Itʼs not necessary to draw fm
the entire plot: just construct
|| Zi0 || and || Zi∞ ||.
f
1
C + LCC example
|| Zi0 || and || Zi∞ || both represent series 1 f0 f
s
resonant impedances, whose Bode || Zi || C
p
diagrams are easily constructed. 1 L
|| Zi0 || and || Zi∞ || intersect at frequency fm. C
s
Zi Zi0
Cp Cp
L
and below resonance.
Zi Zo || Zi0 ||
• ZCS below resonance, ZVS above
f
resonance
L
is greater than short-circuit transistor
Zi Zo || Zi || current. ZVS.
Cp
|| Zi0 ||
f
• Below resonance: no-load transistor current
is less than short-circuit current (for f <fm),
LCC 1
C + but determined by || Zi∞ ||. ZCS.
1
L Cs s
C
p
1 L
C
s
|| Zi ||
Zi Cp Zo
|| Zi0 ||
Theorem 2: If the tank network is purely reactive, then the boundary between
zero-current switching and zero-voltage switching occurs when the load
resistance R is equal to the critical value Rcrit, given by
– Z i
Rcrit = Z o0
Z i0
It is assumed that zero-current switching (ZCS) occurs when the tank input
impedance is capacitive in nature, while zero-voltage switching (ZVS) occurs when
the tank is inductive in nature. This assumption gives a necessary but not sufficient
condition for ZVS when significant semiconductor output capacitance is present.
Previously shown:
Note that Zi∞, Zo0, and Zo∞ have zero
Z o0 real parts. Hence,
1+
Z i = Z i R Z
Z 1 + o0
1 + o Rcrit
R Im Z i(Rcrit) = Im Z i Re
Z
If ZCS occurs when Zi is capacitive, 1 + o
Rcrit
while ZVS occurs when Zi is inductive,
then the boundary is determined by Z o0Z o
1–
∠Zi = 0. Hence, the critical load Rcrit is R 2crit
= Im Z i Re 2
the resistance which causes the Z o
imaginary part of Zi to be zero: 1+
R 2crit
– Z i
Rcrit = Z o0
Z i0
Again, Zi∞, Zi0, and Zo0 are pure imaginary quantities.
If Zi∞ and Zi0 have the same phase (both inductive or both capacitive),
then there is no real solution for Rcrit.
Hence, if at a given frequency Zi∞ and Zi0 are both capacitive, then ZCS
occurs for all loads. If Zi∞ and Zi0 are both inductive, then ZVS occurs for
all loads.
If Zi∞ and Zi0 have opposite phase (one is capacitive and the other is
inductive), then there is a real solution for Rcrit. The boundary between
ZVS and ZCS operation is then given by R = Rcrit.
Note that R = || Zo0 || corresponds to operation at matched load with
maximum output power. The boundary is expressed in terms of this
matched load impedance, and the ratio Zi∞ / Zi0.
C
R> Rcrit. Z i || Zi ||
s
|| Zi0 || Z i0 {
Note that R = || Zo0 || corresponds
to operation at matched load with
maximum output power. The f1 fm
boundary is expressed in terms of
this matched load impedance,
f
and the ratio Zi∞ / Zi0.
– Z i
Rcrit = Z o0
Z i0
Zi
R 90˚
R=0
60˚
ZCS
incr
30˚
easi
ng R
R crit 0˚
ZVS -30˚
||
Z o0
||
-60˚
R=
-90˚ f
f0 fm f f0 f
Typical dependence of Rcrit and matched-load Typical dependence of tank input impedance phase
impedance || Zo0 || on frequency f, LCC example. vs. load R and frequency, LCC example.
2 2
Key equations M
a + J =1 (output characteristic)
b
M= 1 (control characteristic)
Z i0 = jXs, Z i = j Xs + X p 2
1 + Qe
Xp a2 b
H () =
X p + Xs Xp
jXs X p a = H () =
Z o0() = = jXsH () X p + Xs
X p + Xs
H () Ro Ro
Z Xs b= =
Rcrit = Z o0 – i = X p – Z o0() Xs
Z i0 Xs + X p
V I R R
At f = fm: Xs = – 12 X p M = out , J = out o , Qe = o
Vin Vin Re
Important frequencies of popular tank circuits
Tank 0 m
Series 1
LC
Parallel 1 1
LC 2LC
LCC 1 1 1
LC s LC sC p LC s2C p
LLC 1 1 1
L sC Ls + L p C Lp
Ls + C
2
The LLC tank network
Good
characteristics
obtained for fs > fm
• Switch current
varies directly
with load current
• ZVS obtained at
most operating
points including
matched load
LLC output characteristic
for fm < fs < f0
Rcrit 1– F
= nF 1+n
n = 4
Ro0 1+n 2
F –1
Ls
Ro0 =
C
Lp
n=
Ls
f
F= s
f ZVS for R > Rcrit
Qs = 0
||H∞||
fs Qs = 0.25
F=
f
0.35
f = 1
2 (L s + L p)C
R 0.5
Qs = o0
Re
Ls 0.75
Ro0 =
C 1
1.5
2
3
5
10
25
fs = f fs = fm fs = f0
LLC
Output plane characteristic, Lp/Ls = 4
F=1
Increasing F
F=1
Increasing F
F = 0.5
fs
F=
f f0 < fs
1 Increasing F
f =
2 (L s + L p)C F= 1+n
f0 = 1
2 L sC
f0 = 1 + n f
Lp
n=
Ls 1+n
fm = f
M= V 1+ n
Vg 2
IR F = 10
J = o0
Vg
Summary