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2002 - The Influence of Oxygen Impurities On The Formation of AlN-Al Composite by Infiltration - S Swaminathan B Srinivasa Rao
2002 - The Influence of Oxygen Impurities On The Formation of AlN-Al Composite by Infiltration - S Swaminathan B Srinivasa Rao
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Abstract
The influence of residual oxygen in nitrogen on the formation of AlN /Al matrix by reactive infiltration has been investigated.
Increasing the oxygen content from 10 ppm upwards decreased the nitride content in the matrix from 64 to 6%. Based on the
analysis of the availability of oxygen at the Al-melt/gas interface, three distinct scenarios have been proposed: (i) at lowest values,
oxygen does not interfere with either infiltration or nitridation reaction; (ii) at intermediate values, nitridation is suppressed,
however infiltration continues; and (iii) at a critical upper value, the melt passivates without any infiltration. This phenomenon
offers control of the AlN/Al ratio in the matrix and the possibility of creation of microstructural gradients by the appropriate choice
of gas mixtures. # 2002 Elsevier Science B.V. All rights reserved.
arrives there is instantaneously adsorbed. Then Dc / description of the steps involved before Al2O3 precipi-
cfurnace /P /RT, where P is the partial pressure of tates out. Stucki et al. [14] studied the initial oxidation of
oxygen in furnace. Let us suppose that poisoning occurs Al. When a solid Al is exposed to oxygen, there is
when the average O:Al ratio exceeds f. For this to chemisorption up to 20 Langmuirs and then the oxide
happen, before the interface moves up by one mono- peaks start to appear in the auger signal. In contrast,
layer, the number of oxygen atoms arriving per unit area when the liquid is exposed, there was no chemisorption,
must exceed f or fN moles oxygen per area, where N is but the oxygen appears to go into the solution until 1000
the number of moles of aluminium per unit area. Thus, Langmuirs and then the oxide signal appears directly.
the limiting flux is given by: Jt /fN , where t is the time This tells us that liquid Al can dissolve more oxygen
taken for melt to move up a layer /y /vm, where y is the than solid Al, however, there was no indication of what
height of one monolayer and vm is the speed of happens at the melt surface after the melt is saturated
infiltration. with oxygen and before Al2O3 starts to precipitate.
Therefore, the limiting value of pressure is given by: An estimate of the solubility of O in pure Al is 10 6
DP=(RTDx) (vm fN)=y [15]. Thus, if we use f /106, then we get P /0.02 Pa
and assuming a total pressure of 1 atm or 105 Pa, the
or oxygen level is 2/107 Pa or 0.2 ppm. In the absence
P (fNRTvm Dx)=(Dy) of more detailed information on solubilities or the actual
partial pressures prevailing, it is difficult to be more
At 1248 K, Dx is the preform thickness :/0.01 m and quantitative. The above estimate is intended to demon-
D /104 m2 s 1 [12], with oxygen ions of 0.28 nm strate that partial pressures much higher than those
diameter and an experimentally observed infiltration predicted from thermodynamic equilibrium can be
rate of :/2 mm h1: tolerated, given the kinetic constraints when infiltration
y 2:810 10 m is proceeding simultaneously.
Evidence supporting the inhibiting effect of O2 on
vm 0:002=3600 5:610 7 m s 1 AlN growth comes from the literature on the growth of
Let oxygen adsorb as a close-packed array with a group-III nitride single crystals (AlN, GaN and InN) by
spacing of 0.28 nm. The number of moles of oxygen dissolution of nitrogen in the melts (Al, Ga and In)
atoms per unit area is {(2.8)2(0.866)(10 20)(6) under high nitrogen pressure [16]. Quantum mechanical
(1023)} 1 /2.45 /105 and the number of molecules calculations have provided some insight into the me-
per unit area is N /105 per m2. chanisms of nitrogen dissolution into these metals [17].
Since the oxygen ion radius (0.14 nm) and aluminium It was shown that the adsorption of N2 on the surface of
atom radius are the same, the number of moles of each Al melt leads to the dissociation of N2 molecule. The
per unit area is the same for normalisation, assuming energy barrier for this dissociation is around 3.2 eV,
that Al is close-packed at 1248 K. which is less than half of the dissociation energy of N2,
which is 9.8 eV. In contrast, O2 dissociates and then
P f f(10 5 )(10375)(5:610 7 )(0:01)g=f(2:810 10 ) adsorbs onto the melt surface without any energy
(10 4 )g barrier. This points to the fact that the growth of defect
free AlN or GaN is difficult since any oxygen in the
: 210 4 f Pascals
processing environment dissolves in the melt very easily.
It seems likely that the critical oxygen concentration In the similar way, it is expected that the presence of
that can be tolerated before all infiltration ceases is the oxygen impurities during the infiltration of Al /Mg into
solubility limit, beyond which spinel or alumina would Al2O3 preform inhibit the growth of AlN mainly by
be precipitated. Thus, the limit for poisoning of nitrida- adsorption onto the Al melt surface. Strictly speaking,
tion is expected to be lower than this solubility limit. It one has to consider the effect of Mg on the adsorption
will be even further lowered, if surface segregation is of O2 onto the surface of Al melt since Al /2% Mg is
present. Some evidence is available in the literature to used for infiltration. At this moment, it is unclear
support the argument that the Al melt is partially whether Mg helps or hinders the formation of AlN.
covered with oxygen before Al2O3 precipitates out. However, its role in keeping the melt surface free of any
Goumiri and Joud [13] studied the initial stages of passivating oxides, such as alumina or spinel, is well
oxidation and its effect on the surface tension of Al by studied [5,6].
auger electron spectroscopy. It was reported that the From the above analysis, one can then envisage three
surface tension of Al decreases strongly at initial distinct scenarios of infiltration that are delineated by
oxidation and stays rather constant for coverage up to the arrival rate of oxygen at the interface. At the lowest
one monolayer. The decrease in the surface tension of values, oxygen dissolves in the melt in small amounts
the melt was attributed to the formation of oxide islands and does not interfere with either infiltration or the
up to approximately saturation coverage. There was no reaction between Al and N2. At intermediate values,
S. Swaminathan et al. / Materials Science and Engineering A337 (2002) 134 /139 139