This document provides information about an electronics course that covers BJTs, JFETs, and MOSFETs. The course is titled "Electronic Devices and Circuit Theory", taught by M. Khalid, and is worth a total of 10 marks. The first assignment asks students to determine characteristics of a BJT circuit from a diagram, draw and bias the depletion region of a p-channel JFET, and calculate drain currents of a JFET given its IDSS and VP.
This document provides information about an electronics course that covers BJTs, JFETs, and MOSFETs. The course is titled "Electronic Devices and Circuit Theory", taught by M. Khalid, and is worth a total of 10 marks. The first assignment asks students to determine characteristics of a BJT circuit from a diagram, draw and bias the depletion region of a p-channel JFET, and calculate drain currents of a JFET given its IDSS and VP.
This document provides information about an electronics course that covers BJTs, JFETs, and MOSFETs. The course is titled "Electronic Devices and Circuit Theory", taught by M. Khalid, and is worth a total of 10 marks. The first assignment asks students to determine characteristics of a BJT circuit from a diagram, draw and bias the depletion region of a p-channel JFET, and calculate drain currents of a JFET given its IDSS and VP.
Course Title: Electronic Devices and Circuit Theory
Course Instructor: M. Khalid
Total marks: 10 _____________________________________________________________________________________ Topics Covered: BJT Configuration snd analysis, construction of JFET, characterstics of MOSFET and JFET.
Assignment No. 01
Question01. Given the information appearing in figure, determine:
(a) IC. (b) RC. (c) RB. (d) VCE. Question02. (a) Draw the basic construction of a p-channel JFET. (b) Apply the proper biasing between drain and source and sketch the depletion region for VGS 0 V.
Question03. Given IDSS 9 mA and VP = -3.5 V, determine ID when:
(a) VGS 0 V. (b) VGS = -2 V. (c) VGS = -3.5 V. (d) VGS = -5 V.