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RJK5020DPK Mosfet N 500V 40amp 200W + - 30V
RJK5020DPK Mosfet N 500V 40amp 200W + - 30V
RJK5020DPK Mosfet N 500V 40amp 200W + - 30V
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
1. Gate
2. Drain (Flange)
G
3. Source
S
1
2
3
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 500 — — V ID = 10 mA, VGS = 0
Zero gate voltage drain current IDSS — — 1 µA VDS = 500 V, VGS = 0
Gate to source leak current IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0
Gate to source cutoff voltage VGS(off) 3.0 — 4.5 V VDS = 10 V, ID = 1 mA
Static drain to source on state RDS(on) — 0.102 0.115 Ω ID = 20 A, VGS = 10 V Note4
resistance
Input capacitance Ciss — 5150 — pF VDS = 25 V
Output capacitance Coss — 525 — pF VGS = 0
Reverse transfer capacitance Crss — 55 — pF f = 1 MHz
Turn-on delay time td(on) — 52 — ns ID = 20 A
Rise time tr — 115 — ns VGS = 10 V
Turn-off delay time td(off) — 180 — ns RL = 12.5 Ω
Fall time tf — 125 — ns Rg = 10 Ω
Total gate charge Qg — 126 — nC VDD = 400 V
Gate to source charge Qgs — 26 — nC VGS = 10 V
Gate to drain charge Qgd — 54 — nC ID = 40 A
Body-drain diode forward voltage VDF — 0.90 1.50 V IF = 40 A, VGS = 0 Note4
Body-drain diode reverse recovery time trr — 450 — ns IF = 40 A, VGS = 0
diF/dt = 100 A/µs
Notes: 4. Pulse test
Main Characteristics
300
100
ID (A)
300 10
1m µs
30 s 10
0µ
s
Channel Dissipation
10
Drain Current
200 3 Operation in this
1 area is limited by
RDS(on)
PW = 10 ms
0.3
100 (1shot)
0.1
DC Operation
0.03 (Tc = 25°C)
Ta = 25°C
0.01
0 50 100 150 200 1 3 10 30 100 300 1000
ID (A)
5.3 V 20
10
30
5
Drain Current
Drain Current
2
20
VGS = 4.9 V 1
0.5 Tc = 75°C
10 25°C
0.2 −25°C
Pulse Test
0.1
0 4 8 12 16 20 0 2 4 6 8 10
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance Static Drain to Source on State Resistance
vs. Drain Current vs. Temperature
Static Drain to Source on State Resistance
RDS(on) (Ω)
1 0.5
Drain to Source on State Resistance
RDS(on) (Ω)
0.2 ID = 40 A
0.3
0.1 20 A
0.2
0.05
10 A
0.1
0.02
Pulse Test
0.01 0
1 3 10 30 100 300 1000 −25 0 25 50 75 100 125 150
Capacitance C (pF)
200 10000
Ciss
100
3000
50
1000
20
300 Coss
10
5 100
di / dt = 100 A / µs Crss
2 30
VGS = 0, Ta = 25°C
1 10
1 3 10 30 100 300 1000 0 100 200 300
Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V)
VGS
VGS (V)
ID = 40 A
IDR (A)
VDD = 100 V 40
600 250 V 12
400 V
Drain to Source Voltage
30
VDS
400 8
20
4 ID = 10 mA
1 mA
3
2
0.1 mA
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Tc = 25°C
1
D=1
0.5
0.3
0.2
θ ch – c(t) = γ s (t) • θ ch – c
0.1 0.1 θ ch – c = 0.625°C/W, Tc = 25°C
0.05 PW
PDM D=
T
0.03 0.02
1 lse PW
0.0 t pu T
ho
1s
0.01
10 µ 100 µ 1m 10 m 100 m 1 10
td(on) tr td(off) tf
Package Dimensions
JEITA Package Code RENESAS Code Package Name MASS[Typ.]
SC-65 PRSS0004ZE-A TO-3P / TO-3PV 5.0g
Unit: mm
5.0 ± 0.3
15.6 ± 0.3 4.8 ± 0.2
φ3.2 ± 0.2 1.5
1.0
0.5
19.9 ± 0.2
14.9 ± 0.2
0.3
2.0
1.6
18.0 ± 0.5
3.6 0.9
1.0
Ordering Information
Part Name Quantity Shipping Container
RJK5020DPK-E 30 pcs Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.