STI10NM60N

N-channel 600 V, 0.53 Ω typ.,10 A MDmesh™ II Power MOSFET

in I²PAK package
Datasheet - obsolete product

Features
TAB

VDS RDS(on)
Order code ID PTOT

12
3
STI10NM60N
@TJmax
650 V
max.
< 0.55 Ω
( s
10 A ) 70 W

ct
I2PAK
• 100% avalanche tested

d u
• Low input capacitance and gate charge

r
• Low gate input resistance o
Figure 1. Internal schematic diagram

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'7$%
l t
Applications
e
• Switching applications

s o
b
Description
*
) -O This device is an N-channel Power MOSFET

( s developed using the second generation of

ct
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
6
d u company’s strip layout to yield one of the world’s

r o lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

e P $0Y efficiency converters.

l e t Table 1. Device summary

o
bs
Order code Marking Package Packing

O STI10NM60N 10NM60N I²PAK Tube

December 2015 DocID15764 Rev 8 1/12

This is information on a discontinued product. www.st.com
 Contents STI10NM60N

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................... 6

3 Test circuits .............................................. 8

4
s )
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
(
4.1 2
ct
I PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
u
o d
5
r
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
P
e t e
o l
b s
- O
(s )
c t
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O b

2/12 DocID15764 Rev 8

STI10NM60N Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value
Symbol Parameter
I²PAK Unit

VGS Gate- source voltage ± 25 V

ID Drain current (continuous) at TC = 25 °C 10 A
ID Drain current (continuous) at TC = 100 °C 5 A
IDM (1) Drain current (pulsed) 32
( s ) A
PTOT Total dissipation at TC = 25 °C
c
70
t W
dv/dt(2) Peak diode recovery voltage slope
d u 15 V/ns

VISO
r
Insulation withstand voltage (RMS) from all three leads to
o V

TJ
external heat sink (t = 1 s; TC = 25 °C)
Operating junction temperature
e P
Tstg Storage temperature
l e t - 55 to 150 °C

1. Pulse width limited by safe operating area.

s o
2. ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.

O b
) -Table 3. Thermal data

t(s
Value
Symbol Parameter

u c I²PAK Unit

Rthj-case

o d
Thermal resistance junction-case max. 1.79 °C/W
Rthj-amb

P
Rthj-pcb
r Thermal resistance junction-ambient max.
Thermal resistance junction-pcb max.
62.50 °C/W
°C/W

e t e
ol
Table 4. Avalanche characteristics

bs
Symbol Parameter Value Unit

O IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max.)
4 A

Single pulse avalanche energy

EAS 200 mJ
(starting TJ = 25 °C, ID = IAS, VDD = 50 V)

DocID15764 Rev 8 3/12

12
Electrical characteristics STI10NM60N

2 Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

ID = 1 mA, VGS = 0
Drain-source
V(BR)DSS ID = 1 mA, VGS = 0, 600 V
breakdown voltage 650
TC = 150 °C

(s)
Zero-gate voltage
VDS = 600 V 1 µA
IDSS drain current
(VGS = 0)
VDS = 600 V, TC = 125 °C

c t 100 µA

Gate-body leakage
u
od
IGSS VGS = ± 25 V ± 100 nA
current (VDS = 0)

VGS(th)
Gate threshold
voltage
VDS = VGS, ID = 250 µA
P r 2 3 4 V

Static drain-source
e t e Ω
RDS(on)
on-resistance
VGS = 10 V, ID = 4 A

o l 0.53 0.55

b s
- O
Table 6. Dynamic
Symbol Parameter

(s ) Test conditions Min. Typ. Max. Unit

ct
Ciss Input capacitance - 540 - pF

du
Coss Output capacitance - 44 - pF
VDS = 50 V, f = 1 MHz, VGS = 0
Crss
r o
Reverse transfer
capacitance
- 1.2 - pF

e P Equivalent

l e tCoss eq(1) capacitance time

related
VDS = 0 to 480 V, VGS = 0 - 110 - pF

s o Rg Gate input resistance f =1 MHz open drain - 6 - Ω

Ob Qg
Qgs
Total gate charge
Gate-source charge
VDD = 480 V, ID = 8 A,
-
-
19
3
-
-
nC
nC
VGS = 10 V
Qgd Gate-drain charge - 10 - nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS.

4/12 DocID15764 Rev 8

 STI10NM60N Electrical characteristics

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 10 - ns

tr Rise time VDD = 300 V, ID = 4 A, - 12 - ns
td(off) Turn-off-delay time RG = 4.7 Ω, VGS = 10 V - 32 - ns
tf Fall time - 15 - ns

Table 8. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit
( s )
ISD
ISDM(1)
Source-drain current
Source-drain current (pulsed)
u-
ct 8
32
A
A
VSD(2) Forward on voltage ISD = 8 A, VGS = 0
o d - 1.3 V
trr Reverse recovery time
P r - 250 ns

e
ISD = 8 A, di/dt = 100 A/µs

let
Qrr Reverse recovery charge - 2.12 µC
VDD= 60 V
IRRM Reverse recovery current 17 A
trr Reverse recovery time
s o - 315 ns
Qrr Reverse recovery charge
O b
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
2.6 µC
IRRM Reverse recovery current

) - 16.5 A

t ( s
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

u c
o d
P r
e t e
o l
b s
O

DocID15764 Rev 8 5/12

12
 Electrical characteristics STI10NM60N

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for I²PAK Figure 3. Thermal impedance for I²PAK
AM03944v1
ID
(A)

1µs
10
10µs
is
R rea
)
on

100µs
S(
ax a
D
m this
by n

1
d ni

1ms
ite io
m at
Li per
O

10ms

0.1
Tj=150°C
Tc=25°C
( s )
ct
Single
pulse
0.01
0.1 1 10 100 VDS(V)
d u
r o
Figure 4. Output characteristics
AM03947v1 ID
e P
Figure 5. Transfer characteristics
AM03948v1
ID
(A)
14
VGS=10V
(A)
14
l e t
6V
s o
12
VDS=20V

b
12

10
O 10

( s )- 8

6
6

4
c t 5V

u
4

2
o d 2

0
0 5
P r 10 15 20 25 30
4V
VDS(V)
0
0 2 4 6 8 10 VGS(V)

e t e
Figure 6. Normalized VDS vs. temperature Figure 7. Static drain-source on-resistance

o l
VDS AM09028v1
RDS(on)
AM00891v1

b s (norm)
1.10
ID=1mA (Ω)

O 1.08
1.06
0.56

1.04 0.52

1.02
1.00 0.48
VGS=10V
0.98
0.96 0.44

0.94
0.92 0.40
-50 -25 0 25 50 75 100 TJ(°C) 0 2 4 6 8 ID(A)

6/12 DocID15764 Rev 8

 STI10NM60N Electrical characteristics

Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations

AM03951v1 AM03952v1
VGS C
(V) (pF)
VDD=480V
12
ID=4A
VDS 1000
10 Ciss

8
100
6

Coss
4 10

( s ) Crss

ct
0 1
0 5 10 15 20 Qg(nC) 0.1 1 10 100 VDS(V)

Figure 10. Normalized gate threshold voltage

d u
Figure 11. Normalized on-resistance vs.
vs. temperature
r
temperature
o
VGS(th)
(norm)
AM03953v1
RDS(on)

e P AM03954v1

1.10
ID=250µA (norm)
2.1

l e t ID=4A

s o
1.9 VGS=10V
1.00

O b 1.7

1.5

)-
1.3
0.90

t ( s 1.1

0.80

u c 0.9

o d 0.7

Pr
0.70 0.5
-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)

e t e
s ol
O b

DocID15764 Rev 8 7/12

12
 Test circuits STI10NM60N

3 Test circuits

Figure 12. Switching times test circuit for Figure 13. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS
RG D.U.T.
2200
μF 2.7kΩ

( s ) VG

PW
47kΩ
c t
1kΩ
d u
AM01468v1
PW

r o AM01469v1

Figure 14. Test circuit for inductive load

e P
Figure 15. Unclamped inductive load test circuit
switching and diode recovery times
e t
s ol
D
A A A

O b L

)-
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD

25 Ω
S
B B
B

D
t (
μF
s
3.3 1000
μF
VDD ID
G

u c
RG

o d S
Vi D.U.T.

P r Pw

e
let
AM01470v1 AM01471v1

so
Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform

O b VD
V(BR)DSS
tdon
ton
tr
toff
tdoff tf

90% 90%
IDM
10%
ID 10% VDS
0

VDD VDD 90%

VGS

AM01472v1 0 10% AM01473v1

8/12 DocID15764 Rev 8

 STI10NM60N Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

4.1 I2PAK package information

Figure 18. I2PAK (TO-262) package outline

( s )
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P r
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(s )
c t
d u
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l e t
s o
O b 0004982_Rev_H

DocID15764 Rev 8 9/12

12
 Package information STI10NM60N

Table 9. I²PAK (TO-262) package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
A1 2.40 2.72
b 0.61 0.88
b1 1.14 1.70
c 0.49 0.70
c2 1.23 1.32

( s )
ct
D 8.95 9.35

du
e 2.40 2.70
e1 4.95

r o 5.15
E 10
P 10.40

ete
L 13 14

ol
L1 3.50 3.93
L2 1.27

b s 1.40

- O
(s )
c t
du
r o
e P
l e t
s o
O b

10/12 DocID15764 Rev 8

 STI10NM60N Revision history

5 Revision history

Table 10. Document revision history

Date Revision Changes

10-Jun-2009 1 First release

12-Jan-2010 2 Figure 4: Safe operating area for TO-220FP has been corrected
31-Mar-2010 3 Features have been corrected
17-Sep-2010 4 Content reworked to improve readability
24-Nov-2010 5 Corrected ID value

( s )
ct
16-Nov-2012 6 Inserted new package and mechanical data: I²PAK

18-Jul-2013 7
Updated Section 4: Package mechanical data.
Minor text changes.
d u
r o
Part numbers STD10NM60N, STF10NM60N, STP10NM60N,
02-Dec-2015 8
P
STU10NM60N have been moved to a separate datasheet.

e
l e t
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c t (s
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DocID15764 Rev 8 11/12

12
 STI10NM60N

( s )
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IMPORTANT NOTICE – PLEASE READ CAREFULLY

r o
P
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t e
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e
acknowledgement.

o l
b s
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
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ONo license, express or implied, to any intellectual property right is granted by ST herein.

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12/12 DocID15764 Rev 8