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L35 ECEN5817 Out1
L35 ECEN5817 Out1
– – _ – 0
0Ts 0t
Conducting
devices: D1 Q1 X D2 X
1 ECEN 5817
Single-transistor ZVS-QSW
waveforms and state-plane analysis
L
i1 D1 iL
+ Q1 +
+
mc
V1 D2 vc V
_ C _
_
1 2 3 4 5 oTs
jl
ot
mc
jl
ot
Devices conducting
2 ECEN 5817
L
iL
Interval 1: Q1 conduction +
i1 D1
Q1 +
+
V1 D2 vc V
_ C _
_
3 ECEN 5817
L
iL
Interval 2: transition +
i1 D1
Q1 +
+
V1 D2 vc V
_ C _
_
4 ECEN 5817
L
iL
Interval 3: D2 conduction +
i1 D1
Q1 +
+
V1 D2 vc V
_ C _
_
5 ECEN 5817
L
iL
Interval 4: transition +
i1 D1
Q1 +
+
V1 D2 vc V
_ C _
_
6 ECEN 5817
L
iL
Interval 5: D1 conduction +
i1 D1
Q1 +
+
V1 D2 vc V
_ C _
_
7 ECEN 5817
Average output
current
8 ECEN 5817
Control input: transistor/diode conduction angle
9 ECEN 5817
A way to solve and plot the characteristics
10 ECEN 5817
Solving, p 2
11 ECEN 5817
Results: output-plane characteristic of the switch
conversion ratio µ with F as the parameter
12 ECEN 5817
Output-plane characteristic of the
switch conversion ratio µ with as the parameter
13 ECEN 5817
Summary of 1-transistor ZVS-QSW characteristics
µ vs
vs. F
14 ECEN 5817
Boundaries of ZVS operation
mc mc
jl jl
15 ECEN 5817