SEMICONDUCTOR KTC3200

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

LOW NOISE AUDIO AMPLIFIER APPLICATION.

FEATURES B C

The KTC3200 is a transistor for low frequency and low noise applications.
This device is designed to ower noise figure in the region of low signal

A
source impedance, and to lower the pulse noise.
This is recommended for the first stages of equalizer amplifiers. N DIM MILLIMETERS
E A 4.70 MAX
K
Low Noise G B 4.80 MAX
D C 3.70 MAX
: NF=4dB(Typ.), Rg=100 , VCE=6V, IC=100 A, f=1kHz

J
D 0.45
E 1.00
: NF=0.5dB(Typ.), Rg=1k , VCE=6V, IC=100 A, f=1kHz. F 1.27
Low Pulse Noise : Low 1/f Noise. G 0.85
H 0.45
High DC Current Gain : hFE=200 700. H J _ 0.50
14.00 +
F F K 0.55 MAX
High Breakdown Voltage : VCEO=120V . L 2.30
M 0.45 MAX
Complementary to KTA1268.
N 1.00

C
1 2 3

M
1. EMITTER
2. COLLECTOR
3. BASE

MAXIMUM RATING (Ta=25 )

CHARACTERISTIC SYMBOL RATING UNIT
TO-92
Collector-Base Voltage VCBO 120 V
Collector-Emitter Voltage VCEO 120 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 100 mA
Emitter Current IE -100 mA
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=120V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 120 - - V
DC Current Gain hFE(Note) VCE=6V, IC=2mA 200 - 700
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA - - 0.3 V
Base-Emitter Voltage VBE VCE=6V, IC=2mA - 0.65 - V
Transition Frequency fT VCE=6V, IC=1mA - 100 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 3.0 - pF
VCE=6V, IC=100 A, f=10Hz, Rg=10k - - 6.0
Noise Figure NF VCE=6V, IC=100 A, f=1kHz, Rg=10k - - 2.0 dB
VCE=6V, IC=100 A f=1kHz, Rg=100 - 4.0 -
Note : hFE Classification GR:200 400, BL:350 700

2003. 1. 15 Revision No : 1 1/2

 KTC3200

NF - R g , I C h FE - I C
100k 1k
COMMON
SIGNAL SOURCE RESISTANCE Rg (Ω)

EMITTER 12
10 500 Ta=100 C

DC CURRENT GAIN h FE
VCE =6V 8
f=1kHz 6 300 Ta=25 C
10k 4

3
NF 2 Ta=-25 C
=1
dB
100
1k
NF 50
=1
2 dB 30
3 COMMON EMITTER
4
VCE =6V
100 6
8 10
10
0.1 0.3 1 3 10 30 100 300
12
10 COLLECTOR CURRENT I C (mA)
10 100 1k 10k

COLLECTOR CURRENT IC (µA)

Cob - VCB
COLLECTOR OUTPUT CAPACITANCE

10
f=1MHz
I E =0
Ta=25 C
5
C ob (pF)

NF - R g , I C 3

100k
COMMON EMITTER
SIGNAL SOURCE RESISTANCE R g (Ω)

VCE =6V
12
10 f=10Hz

10k 8
NF 6
=1 4 1
dB 2 0 10 20 30 40 50 60 70 80
NF 3
=1d COLLECTOR-BASE VOLTAGE VCB (V)
1k B
2
3
6
8 4
100 10
12

10 h PARAMETER - VCE
10 100 1k 10k
300
COLLECTOR CURRENT I C (µA) h fe
100
COMMON EMITTER
h PARAMETER

50 I E =-1mA
30 f=270Hz
Ta=25 C

10 h ie (xkΩ)

5 h re (x10 -5 )
3 Ω
h oe (xµ )

1
0.5 1 3 5 10 30 50 100 200

COLLECTOR-EMITTER VOLTAGE VCE (V)

2003. 1. 15 Revision No : 1 2/2