Data downloaded from http://www.angliac.

com - the website of Anglia - tel: 01945 474747

2SB1184 / 2SB1243
Transistors

Power Transistor (−60V, −3A)

2SB1184 / 2SB1243

!Features !External dimensions (Units : mm)

1) Low VCE(sat). 2SB1184 2SB1243
VCE(sat) = -0.5V (Typ.) 2.3 +0.2 6.8±0.2 2.5±0.2
6.5±0.2 −0.1

1.5±0.3
(IC/IB = -2A / -0.2A) 5.1 +0.2
−0.1
C0.5
0.5±0.1

2) Complements the 2SD1760 / 2SD1864.

4.4±0.2
0.9
−0.1
5.5 +0.3

9.5±0.5
0.9

1.5

1.0
2.5
0.65±0.1 0.65Max.
0.75

14.5±0.5
0.9
0.55±0.1 0.5±0.1

!Structure 2.3±0.2 2.3±0.2 1.0±0.2

(1) (2) (3)

Epitaxial planar type 2.54 2.54

(1) (2) (3) 1.05 0.45±0.1
PNP silicon transistor
(1) Base (1) Emitter
ROHM : CPT3 (2) Collector ROHM : ATV (2) Collector
EIAJ : SC-63 (3) Emitter (3) Base

!Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Collector-base voltage VCBO −60 V
Collector-emitter voltage VCEO −50 V
Emitter-base voltage VEBO −5 V
IC −3 A (DC)
Collector current
ICP −4.5 A (Pulse) ∗1

1 W
Collector power 2SB1184
dissipation PC 15 W (TC=25°C)
2SB1243 1 W ∗2

Junction temperature Tj 150 °C

Storage temperature Tstg −55~+150 °C
∗1 Single pulse, Pw=100ms
∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.

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2SB1184 / 2SB1243
Transistors

!Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −60 − − V IC=−50µA
Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA
Emitter-base breakdown voltage BVEBO −5 − − V IE=−50µA
Collector cutoff current ICBO − − −1 µA VCB=−40V
Emitter cutoff current IEBO − − −1 µA VEB=−4V
Collector-emitter saturation voltage VCE(sat) − − −1 V IC/IB=−2A/−0.2A ∗
Base-emitter saturation voltage VBE(sat) − − −1.2 V IC/IB=−1.5A/−0.15A ∗
DC current transfer ratio hFE 82 − 390 − VCE=−3V, IC=−0.5A ∗
Transition frequency fT − 70 − MHz VCE=−5V, IE=0.5A, f=30MHz
Output capacitance Cob − 50 − pF VCB=−10V, IE=0A, f=1MHz
∗ Measured using pulse current.

!Packaging specifications and hFE

Package Taping
Code TL TV2
Type hFE Basic ordering unit (pieces) 2500 2500
2SB1184 PQR −
2SB1243 PQR −

hFE values are classified as follows :

Item P Q R
hFE 82~180 120~270 180~390

!Electrical characteristic curves

−10 −3.0 −3.0

−50mA Tc=25°C Tc=25°C
VCE=−3V −45mA −50mA
−5 −40mA −45mA
COLLECTOR CURRENT : IC (A)

−35mA
COLLECTOR CURRENT : IC (A)

−2.5 −2.5 −40mA

COLLECTOR CURRENT : IC (A)

−30mA −20mA
−25mA
−35mA
−2 −30mA
−2.0 −2.0 −25mA
−1 −15mA −20mA
Ta=100°C −15mA
−0.5 25°C
-25°C −1.5 −1.5
−10mA −10mA
−0.2
−1.0 −1.0
−0.1
−5mA
−0.05 IB=−5mA
−0.5 −0.5
PC=15W
−0.02
IB=0mA 0 IB=0mA
−0.01 0
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 0 −1 −2 −3 −4 −5 0 −10 −20 −30 −40 −50

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Grounded emitter Fig.2 Grounded emitter output Fig.3 Grounded emitter output
propagation characteristics characteristics ( Ι ) characteristics ( ΙΙ )

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2SB1184 / 2SB1243
Transistors

−10

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

1000 1k
Ta=25°C VCE=−3V Ta=25°C
500 500 −5
Ta=100°C
25°C
DC CURRENT GAIN : hFE

DC CURRENT GAIN : hFE

200 200 −25°C −2
VCE=−5V
100 100 −1

50 50 −0.5
−3V
20 20 −0.2
10 10 −0.1 IC/IB=50/1
5 5 −0.05 20/1

2 2 −0.02 10/1
1 1 −0.01
−0.01−0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 −0.01−0.02 −0.05 −0.1−0.2 −0.5 −1 −2 −5 −10 −0.01−0.02 −0.05−0.1 −0.2 −0.5 −1 −2 −5 −10
COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)

Fig.4 DC current gain vs. Fig.5 DC current gain vs. Fig.6 Collector-emitter saturation
collector current ( Ι ) collector current ( ΙΙ ) voltage vs.collector current

−10

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

1000 1000
lC/lB=10 Ta=25°C Ta=25°C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
: VBE(sat) (V)

TRANSITION FREQUENCY : fT (MHz)

−5 500 VCE=−5V 500 f=1MHz

Ta=−25°C IE=0A
−2 25°C 200 200
VBE(sat)
100°C
−1 100 100
BASE SATURATION VOLTAGE

−0.5 50 50

−0.2 20 20
Ta=100°C
−0.1 25°C 10 10
−25°C
−0.05 VCE(sat) 5 5

2
−0.02 2
−0.01 1 1
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 1 2 5 10 20 50 100 200 500 1000 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100

COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.7 Collector-emitter saturation voltage Fig.8 Gain bandwidth product vs. Fig.9 Collector output capacitance vs.
vs. collector current emitter current collector base voltage
Base-emitter saturation voltage vs.
collector current

−10.0 −10.0
IC Max. (Pulse)∗ Tc=25°C
−5.0 −5.0 ∗Single
COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : IC (A)

nonrepetitive
−2.0 pulse
−2.0
10
0m

Pw

−1.0
PW

−1.0
=1
s∗

=10

−0.5 −0.5
10

m
s∗
0m
ms

D
DC

s∗

C
∗

−0.2 −0.2

−0.1 −0.1
−0.05 −0.05
Tc=25°C
∗Single
−0.02 nonrepetitive −0.02
pulse
−0.01 −0.01
−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50−100 −0.1−0.2 −0.5 −1 −2 −5 −10 −20 −50−100

COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.10 Safe operation area Fig.11 Safe operation area

(2SB1184) (2SB1243)

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