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Alldatasheet: Z Ibo Seno Electronic Engineering Co., LTD
Alldatasheet: Z Ibo Seno Electronic Engineering Co., LTD
10U45S
10A SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
! Schottky Barrier Chip
! Bypass Diodes for Solar Panels
! High Junction Temperture
! High Thermal Reliability
! Patented Super Barrier Rectifier Technology
! High Foward Surge Capability
! Ultra Low Power Loss, High Efficiency Top View Bottom View
! Excellent High Temperature Stability
DC blocking voltage V DC
Note:1.Valid Provided that are kept at ambient temperature at a distance of 9.5mm from the case.
2.Fr-4pcb.2oz.Copper,minimum recommend pad layout .18.8mm×14.4.Anode pad dimensions 5.6mm×14.4mm.
10U45S 1 of 3 www.senocn.com
Alldatasheet
Z ibo Seno Electronic Engineering Co., Ltd.
10U45S
FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10.0 10
8.0
CURRENT, AMPERES
AMPERES
6.0
4.0
0.1
2.0
o
60 Hz Resistive or TJ=25 C
Inductive load PULSE WIDTH=300uS
0 1% DUTY CYCLE
0.01
0 50 100 150
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
o
LEAD TEMPERATURE, C INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
275 100
RR
Single Half-Sire-Wave
250 (JEDEC Method)
225 10 o
TJ=100 C
MICROAMPERES
200
AMPERES
175 1
150
125 0.1
o
100 TJ=25 C
75 0.01
1 10 100 0 20 40 60 80 100
1000
100
0.1 1.0 4.0 10 100
10U45S 2 of 3 www.senocn.com
Alldatasheet
Z ibo Seno Electronic Engineering Co., Ltd.
10U45S
Ordering Information
Outline Dimensions
A
E
F TO-277B
B Dim Min Max
D
A 1.05 1.15
K B 0.33 0.43
C 0.80 0.99
D 1.70 1.88
G J E 3.90 4.05
I
F 3.054 Typ
G 6.40 6.60
M H 1.84 Typ
L I 5.30 5.45
J 3.549 Typ
H K 0.75 0.95
L 0.50 0.65
C C B M 1.10 1.41
All Dimensions in mm
c h
10U45S 3 of 3 www.senocn.com
Alldatasheet