Second-Order Effects on MOSFET

Small-Signal Model

Copyright ®The McGraw-

McGraw-Hill Companies, Inc. Permission required for reproduction or display.
display.
 Second-Order Effects
• Last analysis use various simplifying
assumptions.
• In this section, we will include other
parameter that is essential in analog circuit
analysis.
• Three second-order effects are:
– Body effect
– Channel Length Modulation
– Subthreshold conduction
Second-order effects:
– Body effect
– Channel Length Modulation
– Subthreshold conduction
Second-Order Effects - Body Effect
• In previous analysis, we have assumed that the
bulk and the source of the transistor were tied to
ground.
• What happen if the bulk voltage of an NFET
drops blow the source voltage as shown below?

• Since the S and D junctions remains reverse-

biased, the device continues to operate properly
but with certain characteristics may change.
Second-Order Effects - Body Effect

• Let VS=VD=0, and VG is less than VTH so that a depletion region is

formed under the gate but no inversion layer exists.
• As VB become more negative, more holes are attracted to the
substrate connection, leaving a larger negative charge behind, ie the
depletion region becomes wider.
• The threshold voltage is a function of the total charge in the
depletion region because the gate charge must mirror Qd before an
inversion layer is formed.
• Thus, as VB drops and Qd increases, VTH also increase.
• This is called the “body effect” or the “backgate effect”
Second-Order Effects - Body Effect
•With body effect, the threshold voltage is given as:

VTH = VTH 0 + γ ( 2ΦF + VSB − 2ΦF )

•Where VSB is the source–bulk potential difference and
the body effect coefficient, γ is

2qεsiNsub
γ=
Cox
•The body effect can occur if the source voltage varies with respect to
Vsub.
Second-Order Effects - Body Effect
• The body effect can occur if the source voltage varies with respect
to Vsub.
• If the substrate tied to ground and body effect is significant.
• As Vin and hence Vout become more positive the potential difference
between the gate and the drain increases, rising the value of VTH.
• Therefore, Vin-Vout must increase to maintain ID constant.

No Body Effect With Body Effect

Second-order effects:
– Body effect
– Channel Length Modulation
– Subthreshold conduction
 Second-Order Effects – Channel-
length modulation
• From previous analysis, we noted that the actual length of the
inverted channel gradually decreases as the potential difference
between the gate and the drain decreases.
• Thus, L’ is a function of VDS. This is called “channel length
modulation”
Second-Order Effects – Channel-
length modulation
L' = L − ∆L
1
1/ L' = (1 + ∆L / L)
L
1
1 / L' = (1 + λVDS )
L
where λVDS = ∆L / L
µnCox W 2
ID = (VGS − VTH )
2 L'
µnCox W
⇒ ID = (VGS − VTH ) 2 (1 + λVDS )
2 L
 Second-Order Effects – Channel-
length modulation
• λ is the channel length modulation coefficient.
• This phenomenon results in a nonzero slope in the
ID/VDS characteristic and hence a non-ideal current
source between D and S in saturation.
• Λ represents the relative variation in the length for a
given increment in VDS.
• For longer channel, λ is smaller.
 Second-Order Effects – Channel-
length modulation
• With channel-length modulation, recalculate
the gm µnCox W
ID = (VGS − VTH ) 2 (1 + λVDS )
2 L
∂ID
gm =
∂VGS VDS cons tan t
W
gm = µnCox (V GS − VTH )(1 + λV DS )
L

2µnCox W ID
gm = L
(1 + λVDS )
2ID
gm = , (unchanged)
VGS − VTH
Second-order effects:
– Body effect
– Channel Length Modulation
– Sub-threshold conduction
 Second-Order Effects –
Subthreshold conduction
• We have assumed that the device turns off
abruptly as VGS drop below VTH.
• In reality, for VGS≈VTH, a “weak” inversion
layer still exists and some current flow
from D to S.
• Even for VGS<VTH, ID is finite, but it exhibits
an exponential dependence on VGS.
• This is called “subthreshold conduction”
 MOS Small-Signal Model
• The quadratic characteristic describe previously
form the large-signal model of MOSFETs.
• Large-signal model is useful when the signal
significantly disturbs the bias points.
• If the perturbation in bias condition is small, a
small-signal model is used to approximate the
large-signal model around the operation points
• This helps to simplify the calculations.
 MOS Small-Signal Model
• The small-signal model is derived by
producing a small increment in a bias point
and calculating the resulting increment in
other bias parameters.
MOS Small-Signal Model – step 1
• Since the drain
current is a function of
the gate-source
voltage, we
incorporate a voltage-
dependent current
source equal to
gmVGS
MOS Small-Signal Model – step 2
• Due to the channel-length
modulation, the drain current
also varies with the drain
current also varies with the
drain-source voltage.
• This effect can be modeled by
a voltage-dependent current
source.
• Since a current source whose
value linearly depends on the
voltage across it is equivalent
to a linear resistor.
MOS Small-Signal Model – step 3
• Recall that the bulk potential
influences the threshold
voltage and hence the gate-
source overdrive.
• With all other terminals held at
a constant voltage, the drain
current is a function of the bulk
voltage.
• Modeling this dependence by
a current source connected
between D and S, we write the
value as gmbVBS
 MOS SPICE models
• To represent the behavior of transistors in
circuit simulation.
• Put TSMC 0.35um spice model
• How to relate the spice model with device
• How to simulate dc, trans & ac
• Frequency response
 NMOS vs PMOS devices
• In most CMOS technology, PMOS devices are
quite inferior to NMOS transistors.
• This is due to the lower mobility of holes,
yielding low current drive and transconductance.
• For given dimension and bias currents, NMOS
transistors exhibits a higher output resistance,
providing more ideal current source and higher
gain in amplifier.
• For these reason, it is preferred to incorporates
NMOS rather than PMOS wherever possible.
Example 2.5, pg 26