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Irfp32N50Kpbf: Smps Mosfet V R Typ. I
Irfp32N50Kpbf: Smps Mosfet V R Typ. I
IRFP32N50KPbF
SMPS MOSFET
Applications HEXFET® Power MOSFET
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply VDSS RDS(on)typ. ID
l High Speed Power Switching 500V 0.135Ω 32A
l Hard Switched and High Frequency
Circuits
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and TO-247AC
Avalanche Voltage and Current
l Low RDS(on)
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 32
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 20 A
IDM Pulsed Drain Current 130
PD @TC = 25°C Power Dissipation 460 W
Linear Derating Factor 3.7 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 13 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 °C
(1.6mm from case )
Mounting torque, 6-32 or M3 screw 10lb*in (1.1N*m)
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy ––– 450 mJ
IAR Avalanche Current ––– 32 A
EAR Repetitive Avalanche Energy ––– 46 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.26
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40
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2/26/04
IRFP32N50KPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.54 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 0.135 0.16 Ω VGS = 10V, ID = 32A
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
––– ––– 50 µA VDS = 500V, VGS = 0V
IDSS Drain-to-Source Leakage Current
––– ––– 250 µA VDS = 400V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -30V
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D
––– ––– 32
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 32A, VGS = 0V
trr Reverse Recovery Time ––– 530 800 ns TJ = 25°C, IF = 32A
Qrr Reverse RecoveryCharge ––– 9.0 13.5 µC di/dt = 100A/µs
IRRM Reverse RecoveryCurrent ––– 30 ––– A
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 0.87mH, RG = 25Ω,
IAS = 32A, as Coss while VDS is rising from 0 to 80% VDSS .
1000 100
VGS VGS
TOP 15V TOP 15V
12V 12V
ID, Drain-to-Source Current (A)
10V
5.0V
1
1
0.1 5.0V
1000 3.0
ID = 32A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)
2.5
100 TJ = 150° C
2.0
(Normalized)
10 1.5
TJ = 25 ° C
1.0
1
0.5
V DS = 50V
20µs PULSE WIDTH VGS = 10V
0.1 0.0
4 5 7 8 9 11 12 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C)
100000 20
V GS = 0V, f = 1 MHZ ID = 32A
Ciss = Cgs + Cgd, Cds SHORTED V DS= 400V
Ciss
12
1000
Coss 8
100
4
Crss
10 0
1 10 100 1000 0 40 80 120 160 200
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
1000 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)
100
ID , Drain Current (A)
TJ = 150° C
100
10us
10
100us
TJ = 25 ° C 10
1
1ms
TC = 25 °C
TJ = 150 °C
V GS = 0 V Single Pulse 10ms
0.1 1
0.2 0.6 0.9 1.3 1.6 10 100 1000 10000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)
4 www.irf.com
IRFP32N50KPbF
35 RD
VDS
30 VGS
D.U.T.
RG
ID , Drain Current (A)
+
25 -VDD
20 10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
VDS
5
90%
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response(Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
PDM
0.02 SINGLE PULSE
0.01 0.01 (THERMAL RESPONSE) t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
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IRFP32N50KPbF
800
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 14A
20A
640 BOTTOM 32A 15V
480 DRIVER
VDS L
320 RG D.U.T +
V
- DD
IAS A
20V
160 tp 0.01Ω
I AS
Current Regulator
Same Type as D.U.T.
QG
50KΩ
12V .2µF
.3µF
VGS
+ QGS QGD
V
D.U.T. - DS
VGS VG
3mA
IG ID
Current Sampling Resistors
Charge
Fig 13a. Gate Charge Test Circuit Fig 13b. Basic Gate Charge Waveform
6 www.irf.com
IRFP32N50KPbF
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS=10V *
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% ISD
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IRFP32N50KPbF
20.30 (.800)
19.70 (.775) 5.50 (.217) NOTES:
2X
4.50 (.177) 1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
1 2 3 2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
-C- TO-247-AC.
14.80 (.583)
4.30 (.170)
14.20 (.559) 3.70 (.145)
LEAD ASSIGNMENTS
Hexfet IGBT
2.40 (.094) 1.40 (.056) 0.80 (.031) 1 -LEAD
GateASSIGNMENTS
1 - Gate
2.00 (.079) 3X 1.00 (.039) 3X 0.40 (.016) 2 - Drain
1 - GATE2 - Collector
2X 2 - DRAIN
0.25 (.010) M C A S 2.60 (.102) 3 - Source 3 - Emitter
3 - SOURCE
5.45 (.215) 2.20 (.087) 4 - Drain
4 - DRAIN4 - Collector
3.40 (.133)
2X 3.00 (.118)
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/04
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