Questions Module 1

Semiconductors diodes and its applications 10M June /July-

1. What is a P-N junction? Discuss its behavior under i) No bias; ii) Forward 2011(06ELN15)
bias; iii) Reverse bias.
2. Draw the AC equivalent circuit of a diode. 5M Dec-10
3. For a typical P.N junction diode, define the terms: i) Knee voltage and ii) 4M Dec-10/Model QP
Reverse saturation current. iii) PIV iv) Dynamic resistance
4. Draw and explain the V-I characteristics of a silicon P-N junction Diode. 5M QP-14, CBCS-15
5. Draw and explain the V-I characteristics of a Ge PN junction Diode. 5M July-15
6. Find the value of the series resistance R, required to drive a forward current 4M July-15
of 1.25mA through a Germanium Diode from a 4.5 V battery. Write the circuit
diagram showing all the value.
7. With appropriate circuit diagram explain the DC load line analysis of 5M Model QP-14
semiconductor diode.
8. Deduce the following for HWR i)I rms ii) Idc, . Prove that ripple factor of a 4M, 7M Model QP-14, CBCS-
HWR is 1.21 6M MQP-15, July-15

9. Deduce the following for FWR: i) Irms ii) Idc iii) Ripple factor iv) Efficiency 8M July-11
of rectification.
10. In a full wave rectifier, the input is from 30-0-30V transformer. The load 5M Model QP-14
and diode forward resistances are 100Ω and 10Ω respectively. Calculate the
average voltage, dc output power, ac input power, rectification efficiency and
percentage regulation.
11. A single phase full — wave rectifier supplies power to a 1 KΩ load. The 6M Model QP-14
AC voltage applied to the diode is 300-0-300 V. If diode resistance is 25Ω and
that of the transformer secondary negligible. Determine average load current,
average load voltage and rectification efficiency.
12. The i/p to the Full wave rectifier is v(t) = 200 sin50t. If R L is 1kΩ and 6M CBCS-MQP-15
forward resistance of diode is 50Ω, find:
i) D.C current through the circuit
ii) The A.C (rms) value of current through the circuit
iii) The D.C output voltage
iv) The A.C power input
v) The D.C power output
vi) Rectifier efficiency.
13. With neat diagram explain the working of Bridge wave rectifier. 6M June /July-2014

14. In a full wave bridge rectifier, the transformer secondary voltage is 100 sin 8M June /July-2011
50t. The forward Resistance of each diode is 250 Ω and the load resistance is
950 Ω. Calculate
i) DC output voltage and Rms output voltage
ii) Ripple factor'
iii) Efficiency of rectification
iv) DC output power and ac power
v) Peak inverse voltage of the diode
15. With a neat circuit diagram, explain the working principles of full bridge 6M, 8M July-2011, Model
rectifier. And show its ripple factor is 0.48 QP-14, Jan-11
16. With a neat circuit diagram, explain the working principles of full bridge 10M July-15
rectifier using two diodes. Also derive the expression for I rms and Idc of a full
wave rectifier
17. Explain the performance of Zener-Diode in terms of source effect, ripple 6M,8M Dec-14
rejection ratio, output resistance and load effects

18 Design a Zener voltage regulator to meet the following specifications: 4M Dec-10

Output voltage = 5 V load current = 10 mA Zener wattage = 100 mW input
voltage = 10 V ±2 V.
19. Explain the Zener diode, voltage regulator circuit with no load and with 6M CBCS-MQP-15
load.
20. Distinguish between breakdown Zener and avalanche breakdown 6M July-15
21. Derive an equation for the collector current of a P N P transistor in terms 5M Jyly-15
of base current.
BJT amplification, Common Base, Common Emitter and Common
Collector Characteristics,
1. Sketch typical transistor common-base current gain characteristics. Explain 8M June /July-
the shape of the characteristics. 2011(06ELN15)

2. Draw the common emitter circuit and sketch the input and output 7M Model QP-14,
characteristics. Also explain active region, cutoff region and saturation region by 4M Dec-14,
indicating them on the characteristic curve. Jan-11, MQP-15
3 In a Common Emitter transistor circuit if β = 100 and I B = 50μA, compute 5M Model QP, July11
the values of α, IE and IC.
4. Given IE= 2.5mA, α = 0.98 and ICBO= l0 µA, calculate IB and Ic. 4M January 2011
(10ELN15)
5. Calculate the value of I c , I E and β dc for transistors with α=0.99 and I B 4M July-11
=110µA

6 A transistor amplifier connected in CE mode has 𝞫= 50 and I B= 25 µA. 6M July-11

Compute the values of I B, I E and α...
7. Compare various BJT circuit configurations. 4M Dec-14

8. Derive the relationship between α and β. Calculate the value of I c, Ie for a 4M CBCS-MQP-15
transistor that has Ib = 100µA and α =0.98
9. Calculate the value of I c , I E and β dc for transistors with α=0.98 and I B 6M July-15
=120µA
10. Explain the Voltage amplification of Transistor. 4M Dec-Jan-16

11. Obtain the relationship between αdc and 𝞫dC. 4M July-15