Analytical Services Available at NCP

Equipment used for

Sr. No Type of analytical services
analysis

Nano Science & Technology

Precise studies of surface

1 chemical composition, XPS
elemental quantification

Electrical and photovoltaics

Keithly, Xe-1000W
2 measurements with and
source
without solar simulator

Atomic and Laser Physics

1 LIBS Laser+Spectrometer+PC
Laser+Power supplies +
Time of flight mass
2 Oscilloscope+Vacuum
spectrometer (TOF-MS)
pump +TOF+ PC
Note: This cost will cover only the recording of spectra but not the analysis of spectra.
Experimental High Energy Physics
PCB designing
1 PC, CAD software
(single and multilayer)
Reverse Engineering of PC, CAD software,
2 sophisticated scientific Oscilloscope, function
equipment’s generator…etc
Repair and maintenance of
Oscilloscope, Multi-
3 scientific electronics
meter, ..etc
equipment’s
Development of Gases
4 As per requirement
detectors
Design and develop detector
5 PC, WinCC-OA software
control system
Design and develop
6 microcontroller based smart Chip Programmer, software
projects

Electrical measurement with

7 Keithley, lab view setup
and without cosmic muons
Vacuum Science & Technology

Electron Beam Evaporation For deposition of

System nanostructured
1
Specs: thin film coating of oxides,
4 crucibles for target material, elements compounds etc.
High Vacuum, Thickness
monitor, Automatic control

Thermal Coating Unit For deposition of thin

2 Specs: film/coating
Two boats for target material, of elements, metals etc.
High Vacuum, Manual
Control

For Phase transformation,

Low Pressure Chemical Vapor
production
Deposition (LPCVD)
of CNT’s, Annealing,
3 Specs:
sintering and calcination of
Temp 1400⁰C, Low Vacuum,
samples under vacuum &
Different gases
different environments.

Vacuum Oven For drying, annealing,

4 Specs: Temp 200 0C, Low sintering and calcination of
Vacuum, For Different samples
environment

LCR meter For measurement of

5 Specs: Frequency 100 Hz to Inductance, capacitance and
10 KHz, Accuracy 0.25% resistive of samples

Spin Coater For solution based thin film

6 Specs: coating
RPM 5000
7 Spray Coating For coating of PTFE only

Raman Spectroscopy Raman Spectrum of

8 Specs: powder/liquid sample
Wavelength 785 nm, software
for spectrum, scanning up to
2400 cm-1 Raman Shift
Primary / secondary
9
Calibration of vacuum gauges vacuum standards

10 Helium leak detector

Leak detection & rectification
 Pumping speed measurement Vacuum pump measuring
11
of rotary/roots/diffusion system
vacuum pumps
Permeability measurement of Permeability measurement
12
Helium gas system

13 Vacuum system designing &

development

14
Vacuum system up gradation Depending upon user requirements & complexity of the v
Problem identification &
15 rectification of industrial
vacuum system

16 Repair / maintenance of all Depending upon fault / troubleshooting of the vacuu

types of vacuum pumps
Experimental Physics & Accelerator Facility
RBS, EBS, PIXE, PIGE,
1 Ion Beam Accelerator
NRA, ERD
2 Total - IBA Ion Beam Accelerator
3 RBS Channeling Ion Beam Accelerator

Ion Beam Irradiation /

4 Ion Beam Accelerator
Implantation , Bio Irradiation

5 Gamma Ray spectroscopy Gamma Ray spectroscopy

*Sample test prices may change anytime due to change in prices of chemicals in the market.

Glossary:
Bio-Irradiation:
·         Ion sources available= Proton, Helium, Carbon, Copper, Gold, Silicon, Boron, Nickle
·         Ion energy range available = 0.8 MeV-15 MeV
·         Exposure area= 8 mm diameter
·         Ion Influence range = 1011 – 5 x 1015 ions/cm2

EBS: Elastic non-Rutherford Backscattering

·         Resonance scattering for low concentration of Nitrogen, Oxygen, Carbon, Boron etc.

ERD: Elastic Recoil Detection

·         Non-destructive quantitative compositional analysis
·         Detection of Hydrogen or deuterium in thin films
·         Hydrogen detection in metals

Gamma Ray Spectroscopy: Detection of radionuclides (radioactive contaminants) in soil, water, food and air sampl
IBA: Ion Beam Analysis

Ion Beam Irradiation / Implantation:

·         Ion sources available= Proton, Helium, Carbon, Copper, Gold, Silicon, Boron, Nickle
·         Ion energy range available = 0.8 MeV-15 MeV
·         Exposure area= 8 mm diameter
·         Ion Influence range = 1011 – 5 x 1015 ions/cm2

LCR An LCR meter is a type of electronic test equipment used to measure the inductance (L), capacitance (
Meter: electronic component.

NRA: Nuclear Reaction Analysis

·         Measurement of low levels of B,C,N,O and F
·         Depth Profiling of light element in heavy matrix (Z<15)
·         Non-Destructive compositional analysis
·         Quantitative measurement by calibration standards
·         Measurement of depth profiling by stepping the of accelerator to produce reactions with narrow resonance

PIXE: Particle Induced X-ray Emission

·         A non-destructive technique for quantitative as well as qualitative elemental analysis of different materials (FromA1-U
·         Trace element Analysis of different materials (1-100 ppm)
·         Probe depth up to tens of microns
·         Higher signal to background ratio
·         PIXE is 100 times more sensitive than EDX

PIGE: Particle Induced Gamma ray Emission

·         Measurement of low levels of B,C,N,O and F
·         Depth Profiling of light element in complex matrix (Z<15)
·         Non-Destructive compositional analysis
·         Quantitative measurement by calibration standards

RBS : Rutherford Backscattering Spectroscopy

·         A non-destructive technique for multi-element composition (B-U)
·         Measurement of thin film composition and thickness (~1nm) to a depth of ~3 micron
·         Depth profiles

RBS Channeling:
·         Crystallographic analysis and crystalline quality of thin film
·         Crystal damage/defect profiling; change of crystallinity with depth
·         Impurity location in crystals
·         Lattice location of dopants and point defects; XRD cannot detect point defects but only the extended defects
·         Determination of percent amorphization and thickness of amorphized layers
Total-IBA: Data of different techniques collected simultaneously

XPS: X-ray Photoelectron Spectroscopy

 Annex-A
tical Services Available at NCP
Approximate time required
*Cost of sample analysis (PKR) for analysis after receipt of
sample(s)

XPS survey and detailed Scan =10000

XPS with Imaging = 10000
Auger Spectroscopy= 10000
One week
Auger spectroscopy with Auger Imaging = 12000
EDX = 2000
ARPES = 5000

Electrical measurements = 3000

-do-
Electrical measurement with solar simulator =5000

1000/spectra 10 days

5000/spectra 15 days

the analysis of spectra.

As per nature of project As per nature of project

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Rs. 3000 //
 15000/- per sample Three week

10000/- per sample One week

10000/- per day Three week

8000/- per day One week

1000/- per sample One week

1000/- per sample One week

1000/- per sample Two week

5000/- per sample Three week

a. Rough / medium (10,000/- per sample) a. One week

b. High / ultra-high (20,000/ per sample b. Two week
Min Rs. 30,000/- to max (depending upon system
One week to two week
complexity)
 Rs. 50,000/- to 150,000/- max One month to three months

Rs. 50,000/- per sample Three months

Depending upon user requirements & complexity of the vacuum system

Depending upon fault / troubleshooting of the vacuum pump

Rs. 1000 for Researchers & Rs. 500 for Students One month

Rs. 2000 for Researchers & Rs. 1000 for Students One month
Rs. 2000 for Researchers & Rs. 1000 for Students One month

Rs. 1000 for Researchers & Rs. 500 for Students One month

Rs. 1000 for Researchers & Rs. 500 for Students One month

es of chemicals in the market.

, Gold, Silicon, Boron, Nickle

n, Oxygen, Carbon, Boron etc.

radioactive contaminants) in soil, water, food and air samples

 , Gold, Silicon, Boron, Nickle

quipment used to measure the inductance (L), capacitance (C), and resistance (R) of an

elerator to produce reactions with narrow resonance

s qualitative elemental analysis of different materials (FromA1-U)

~1nm) to a depth of ~3 micron

with depth

not detect point defects but only the extended defects

s of amorphized layers