Nov 2002

AO4409
P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO4409 uses advanced trench technology to VDS (V) = -30V

provide excellent RDS(ON), and ultra-low low gate ID = -15 A
charge. This device is suitable for use as a load Max RDS(ON) < 7.5mΩ (VGS = -10V)
switch or in PWM applications. Max RDS(ON) < 12mΩ (VGS = -4.5V)

D
SOIC-8
Top View

S D
S D
S D G
G D S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C -15
Current A TA=70°C ID -12.8 A
B
Pulsed Drain Current IDM -80
TA=25°C 3
PD W
Power Dissipation A TA=70°C 2.1
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 26 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 50 75 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 14 24 °C/W

Alpha & Omega Semiconductor, Ltd.

AO4409

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-24V, VGS=0V -5
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -25
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.4 -1.9 -2.7 V
ID(ON) On state drain current VGS=-10V, VDS=-5V 80 A
VGS=-10V, ID=-15A 6.2 7.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 8.2 11.5
VGS=-4.5V, ID=-10A 9.5 12 mΩ
gFS Forward Transconductance VDS=-5V, ID=-15A 35 50 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.71 -1 V
IS Maximum Body-Diode Continuous Current -5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 5270 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 945 pF
Crss Reverse Transfer Capacitance 745 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 100 nC
Qg(4.5V) Gate Charge 51.5 nC
VGS=-10V, VDS=-15V, ID=-15A
Qgs Gate Source Charge 14.5 nC
Qgd Gate Drain Charge 23 nC
tD(on) Turn-On DelayTime 14 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=1Ω, 16.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 76.5 ns
tf Turn-Off Fall Time 37.5 ns
trr Body Diode Reverse Recovery Time IF=-15A, dI/dt=100A/µs 36.7 ns
Qrr Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs 28 nC

A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.

Alpha & Omega Semiconductor, Ltd.

AO4409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 60
-10V VDS=-5V
50 50
-6V

40 -4.5V -3.5V 40
-4V
-ID (A)

-ID(A)
30 30

20 20
VGS=-3V 125°C
10 10
25°C
0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

10 1.6
VGS=-4.5V Normalized On-Resistance ID=-15A

8 1.4 VGS=-10V
RDS(ON) (mΩ)

6 VGS=-4.5V
1.2
VGS=-10V

4
1

2
0 5 10 15 20 25 0.8
-ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage Figure 4: On-Resistance vs. Junction Temperature

20 1.0E+02

ID=-15A 1.0E+01
16 VGS=0V
1.0E+00
125°C
RDS(ON) (mΩ)

12 1.0E-01
-IS (A)

125°C
1.0E-02
8
25°C 1.0E-03
4 25°C
1.0E-04

0 1.0E-05
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha and Omega Semiconductor, Ltd.

AO4409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 8000
VDS=-15V
ID=-15A 7000
8
6000
Ciss

Capacitance (pF)
5000
-VGS (Volts)

6
4000
4
3000
Coss
2000
2
1000
Crss
0 0
0 20 40 60 80 100 120 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
100
RDS(ON) 10µs TJ(Max)=150°C
limited 100µs
TA=25°C
80
1ms
10.0 10ms
Power (W)

60
-ID (Amps)

0.1s

40
1s
1.0
10s 20
TJ(Max)=150°C
DC
TA=25°C
0
0.1 0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100 Pulse Width (s)
-VDS (Volts) Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z θJA Normalized Transient

RθJA=40°C/W
Thermal Resistance

PD
0.1
Ton
T
Single Pulse

0.01
0.00001 0.0001 0.001 0.01 Pulse 0.1
Width (s) 1 10 100 1000
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

 ALPHA & OMEGA SOP-8 Package Data
SEMICONDUCTOR, INC.

DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES

SYMBOLS
MIN NOM MAX MIN NOM MAX
A 1.45 1.50 1.55 0.057 0.059 0.061
A1 0.00 −−− 0.10 0.000 −−− 0.004
A2 −−− 1.45 −−− −−− 0.057 −−−
b 0.33 −−− 0.51 0.013 −−− 0.020
c 0.19 −−− 0.25 0.007 −−− 0.010
D 4.80 −−− 5.00 0.189 −−− 0.197
E1 3.80 −−− 4.00 0.150 −−− 0.157
e 1.27 BSC 0.050 BSC
E 5.80 −−− 6.20 0.228 −−− 0.244
h 0.25 −−− 0.50 0.010 −−− 0.020
L 0.40 −−− 1.27 0.016 −−− 0.050
aaa −−− −−− 0.10 −−− −−− 0.004
θ 0° −−− 8° 0° −−− 8°

θ
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE

PACKAGE MARKING DESCRIPTION RECOMMENDED LAND PATTERN

NOTE:
LOGO - AOS LOGO
4409 - PART NUMBER CODE.
LOGO 4 4 0 9 F - FAB LOCATION
A - ASSEMBLY LOCATION
FAYWLC Y - YEAR CODE
W - WEEK CODE.
LC - ASSEMBLY LOT CODE

SOP-8 PART NO. CODE

UNIT: mm

PART NO. CODE

AO4409 4409

Rev. A
 ALPHA & OMEGA SO-8 Tape and Reel Data
SEMICONDUCTOR, INC.

SO-8 Carrier Tape

SO-8 Reel

SO-8 Tape
Leader / Trailer
& Orientation