DPAK For Surface Mount Applications: Semiconductor Technical Data

Order this document
by MJD122/D
SEMICONDUCTOR TECHNICAL DATA

DPAK For Surface Mount Applications *Motorola Preferred Device
Designed for general purpose amplifier and low speed switching applications.
SILICON
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
POWER TRANSISTORS
• Straight Lead Version in Plastic Sleeves (“–1” Suffix)
8 AMPERES
• Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)
100 VOLTS
• Surface Mount Replacements for 2N6040–2N6045 Series, TIP120–TIP122
20 WATTS
Series, and TIP125–TIP127 Series
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• Monolithic Construction With Built–in Base–Emitter Shunt Resistors
• High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• Complementary Pairs Simplifies Designs
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJD122
Rating Symbol MJD127 Unit
CASE 369A–13
Collector–Emitter Voltage VCEO 100 Vdc
Collector–Base Voltage VCB 100 Vdc
Emitter–Base Voltage VEB 5 Vdc
Collector Current — Continuous IC 8 Adc
Peak 16
Base Current IB 120 mAdc
CASE 369–07
Total Power Dissipation @ TC = 25_C PD 20 Watts
Derate above 25_C 0.16 W/_C
Total Power Dissipation* @ TA = 25_C PD 1.75 Watts
W/_C
Derate above 25_C 0.014
MINIMUM PAD SIZES
Operating and Storage Junction TJ, Tstg – 65 to + 150 _C RECOMMENDED FOR
Temperature Range SURFACE MOUNTED
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ APPLICATIONS
THERMAL CHARACTERISTICS
0.190
4.826
Characteristic Symbol Max Unit
_C/W
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case RθJC 6.25
_C/W
Thermal Resistance, Junction to Ambient* RθJA 71.4
0.165
4.191
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
0.07
1.8
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage VCEO(sus) 100 — Vdc
0.118
3.0
(IC = 30 mAdc, IB = 0)
µAdc
Collector Cutoff Current ICEO — 10
(VCE = 50 Vdc, IB = 0)
0.063
1.6
* These ratings are applicable when surface mounted on the minimum pad sizes recommended.
0.243
6.172
(continued) inches
mm
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ

ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS — continued
µAdc
Collector Cutoff Current ICEX
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc) — 10
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) — 500
Collector Cutoff Current ICBO — 10 µAdc
(VCB = 100 Vdc, IE = 0)
Emitter Cutoff Current IEBO — 2 mAdc
(VBE = 5 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain hFE —
(IC = 4 Adc, VCE = 4 Vdc) 1000 12,000
(IC = 8 Adc, VCE = 4 Vdc) 100 —
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = 4 Adc, IB = 16 mAdc) — 2
(IC = 8 Adc, IB = 80 mAdc) — 4
Base–Emitter Saturation Voltage (1) VBE(sat) — 4.5 Vdc
(IC = 8 Adc, IB = 80 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage
ÎÎÎÎÎÎÎÎ VBE(on) — 2.8 Vdc
(IC = 4 Adc, VCE = 4 Vdc)
DYNAMIC CHARACTERISTICS
Current–Gain–Bandwidth Product |hfe| 4 — MHz
(IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)
Output Capacitance Cob pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD127 — 300
MJD122 — 200
Small–Signal Current Gain hfe 300 — —
(IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz)
v v
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
TA TC
2.5 25
PD, POWER DISSIPATION (WATTS)
2 20
1.5 15 TC
TA
1 10
SURFACE
MOUNT
0.5 5
0 0
25 50 75 100 125 150
T, TEMPERATURE (°C)
Figure 1. Power Derating
2 Motorola Bipolar Power Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS
PNP MJD127 NPN MJD122
20,000 20,000
VCE = 4 V VCE = 4 V
10,000 10,000
7000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN

5000 5000 TJ = 150°C
TJ = 150°C
3000 3000
2000 2000
25°C 25°C
1000 1000
700 – 55°C – 55°C
500 500
300 300
200 200
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
3 3
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
TJ = 25°C VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) TJ = 25°C

2.6 IC = 2 A 4A 6A 2.6 IC = 2 A 4A 6A
2.2 2.2
1.8 1.8
1.4 1.4
1 1
0.3 0.5 0.7 1 2 3 5 7 10 20 30 0.3 0.5 0.7 1 2 3 5 7 10 20 30
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
3 3
TJ = 25°C TJ = 25°C
2.5 2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2 2
1.5 VBE @ VCE = 4 V 1.5 VBE(sat) @ IC/IB = 250
VBE @ VCE = 4 V
VBE(sat) @ IC/IB = 250
1 1
VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5 0.5
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10
Figure 4. “On” Voltages
Motorola Bipolar Power Transistor Device Data 3

TYPICAL ELECTRICAL CHARACTERISTICS
PNP MJD127 NPN MJD122
+5 +5
θV, TEMPERATURE COEFFICIENTS (mV/°C)
θV, TEMPERATURE COEFFICIENTS (mV/°C)

+4 *IC/IB ≤ hFE/3 +4 *IC/IB ≤ hFE/3
+3 +3 25°C to 150°C
+2 +2 – 55°C to 25°C
+1 +1
0 25°C to 150°C 0
–1 θVC for VCE(sat) –1 *θVC for VCE(sat)
–2 – 55°C to 25°C –2
–3 25°C to 150°C –3 25°C to 150°C
θVB for VBE – 55°C to 25°C θVB for VBE
–4 –4 – 55°C to 25°C
–5 –5
0.1 0.2 0.3 0.5 1 2 3 5 7 10 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10
Figure 5. Temperature Coefficients
105 105
REVERSE FORWARD REVERSE FORWARD

104 104
IC, COLLECTOR CURRENT ( µ A)
IC, COLLECTOR CURRENT ( µ A)
103 VCE = 30 V 103 VCE = 30 V
102 102
TJ = 150°C
TJ = 150°C
101 101
100°C
100 25°C 100 100°C
25°C
10–1 10–1
+ 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1 – 1.2 – 1.4 – 0.6 – 0.4 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1 + 1.2 + 1.4
VBE, BASE–EMITTER VOLTAGE (VOLTS) VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 6. Collector Cut–Off Region
10,000 300
5000 TJ = 25°C
hfe , SMALL–SIGNAL CURRENT GAIN
3000 200
2000
C, CAPACITANCE (pF)
1000
Cob
500 TC = 25°C
300 100
VCE = 4 Vdc
200 IC = 3 Adc
100 70
Cib
50 PNP 50
30 PNP
20 NPN NPN
10 30
1 2 5 10 20 50 100 200 500 1000 0.1 0.2 0.5 1 2 5 10 20 50 100
f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Small–Signal Current Gain Figure 8. Capacitance

5
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS ts PNP
VCC 3
D1, MUST BE FAST RECOVERY TYPE, e.g.: NPN
– 30 V 2
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA RC SCOPE tf
1
TUT
t, TIME ( µs)
V2 RB 0.7
APPROX 0.5
+8 V
51 D1 ≈ 8 k ≈ 120 0.3
0
0.2 VCC = 30 V tr
V1
APPROX IC/IB = 250
+4V 0.1
–12 V 25 µs IB1 = IB2
0.07 TJ = 25°C td @ VBE(off) = 0 V
tr, tf ≤ 10 ns FOR td AND tr, D1 IS DISCONNECTED 0.05
DUTY CYCLE = 1% AND V2 = 0 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. IC, COLLECTOR CURRENT (AMP)
Figure 9. Switching Times Test Circuit Figure 10. Switching Times
1
THERMAL RESISTANCE (NORMALIZED)
0.7 D = 0.5
0.5
r(t), EFFECTIVE TRANSIENT
0.3 0.2
0.2
0.1
P(pk)
RθJC(t) = r(t) RθJC
0.1 0.05
RθJC = 6.25°C/W
0.07 D CURVES APPLY FOR POWER
0.01
0.05 PULSE TRAIN SHOWN t1
READ TIME AT t1 t2
0.03 SINGLE PULSE TJ(pk) – TC = P(pk) θJC(t)
0.02 DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1000
t, TIME OR PULSE WIDTH (ms)
Figure 11. Thermal Response
20
15 There are two limitations on the power handling ability of a
10 500 µs 100 µs
IC, COLLECTOR CURRENT (AMP)
transistor: average junction temperature and second break-

5 down. Safe operating area curves indicate IC – VCE limits of
3 the transistor that must be observed for reliable operation;
2
1 ms i.e., the transistor must not be subjected to greater dissipa-
1 TJ = 150°C 5 ms tion than the curves indicate.
0.5 The data of Figure 12 is based on T J(pk) = 150_C; TC is
0.3 BONDING WIRE LIMIT variable depending on conditions. Second breakdown pulse
0.2 THERMAL LIMIT limits are valid for duty cycles to 10% provided T J(pk)
dc
0.1 TC = 25°C (SINGLE PULSE) < 150_C. T J(pk) may be calculated from the data in Fig-
SECOND BREAKDOWN LIMIT ure 11. At high case temperatures, thermal limitations will re-
0.05
CURVES APPLY BELOW RATED VCEO duce the power that can be handled to values less than the
0.03
0.02 limitations imposed by second breakdown.
1 2 3 5 7 10 20 30 50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 12. Maximum Forward Bias

Safe Operating rea

PNP COLLECTOR NPN COLLECTOR
BASE BASE
≈8k ≈ 120 ≈8k ≈ 120
EMITTER EMITTER
Figure 13. Darlington Schematic

PACKAGE DIMENSIONS
NOTES:
–T– SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
PLANE Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B C
INCHES MILLIMETERS
V R E DIM MIN MAX MIN MAX
A 0.235 0.250 5.97 6.35
B 0.250 0.265 6.35 6.73
4 C 0.086 0.094 2.19 2.38
Z D 0.027 0.035 0.69 0.88
A E 0.033 0.040 0.84 1.01
S F 0.037 0.047 0.94 1.19
1 2 3 G 0.180 BSC 4.58 BSC
U H 0.034 0.040 0.87 1.01
K J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
L 0.090 BSC 2.29 BSC
F J R 0.175 0.215 4.45 5.46
L S 0.020 0.050 0.51 1.27
H U 0.020 ––– 0.51 –––
V 0.030 0.050 0.77 1.27
D 2 PL Z 0.138 ––– 3.51 –––
G 0.13 (0.005) M T
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 369A–13
ISSUE W
B C NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
V R E Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.235 0.250 5.97 6.35
A B 0.250 0.265 6.35 6.73
1 2 3 C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
S E 0.033 0.040 0.84 1.01
F 0.037 0.047 0.94 1.19
–T– G 0.090 BSC 2.29 BSC
SEATING K H 0.034 0.040 0.87 1.01
PLANE
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.175 0.215 4.45 5.46
J S 0.050 0.090 1.27 2.28
F V 0.030 0.050 0.77 1.27
H
D 3 PL
STYLE 1:
G 0.13 (0.005) M T PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 369–07
ISSUE K

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:

USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
*MJD122/D*
◊ MJD122/D

DPAK For Surface Mount Applications: Semiconductor Technical Data

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

DPAK For Surface Mount Applications: Semiconductor Technical Data

Uploaded by

Copyright:

Available Formats



 Motorola, Inc. 1995 1

Figure 1. Power Derating

2 Motorola Bipolar Power Transistor Device Data

PNP MJD127 NPN MJD122

hFE , DC CURRENT GAIN

Figure 2. DC Current Gain

TJ = 25°C VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) TJ = 25°C

Figure 3. Collector Saturation Region

1.5 VBE @ VCE = 4 V 1.5 VBE(sat) @ IC/IB = 250

Figure 4. “On” Voltages

Motorola Bipolar Power Transistor Device Data 3

PNP MJD127 NPN MJD122

θV, TEMPERATURE COEFFICIENTS (mV/°C)

Figure 5. Temperature Coefficients

REVERSE FORWARD REVERSE FORWARD

103 VCE = 30 V 103 VCE = 30 V

Figure 6. Collector Cut–Off Region

Figure 7. Small–Signal Current Gain Figure 8. Capacitance

4 Motorola Bipolar Power Transistor Device Data

Figure 9. Switching Times Test Circuit Figure 10. Switching Times

Figure 11. Thermal Response

transistor: average junction temperature and second break-

Figure 12. Maximum Forward Bias

Motorola Bipolar Power Transistor Device Data 5

≈8k ≈ 120 ≈8k ≈ 120

Figure 13. Darlington Schematic

6 Motorola Bipolar Power Transistor Device Data

Motorola Bipolar Power Transistor Device Data 7

How to reach us:

8 Motorola Bipolar Power Transistor Device Data

You might also like