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Switching Regulator Applications: Absolute Maximum Ratings
Switching Regulator Applications: Absolute Maximum Ratings
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)
2SK3878
Switching Regulator Applications
Unit: mm
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic Symbol Max Unit
Note 1: Ensure that the channel temperature does not exceed 150°C 1
during use of the device.
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Rise time tr ⎯ 25 ⎯
10 V ID = 4 A
VGS VOUT
Turn-on time ton 0V ⎯ 65 ⎯
4.7 Ω
Switching time RL = 100 Ω ns
Fall time tf ⎯ 20 ⎯
VDD ≈ 400 V
Duty ≤ 1%, tw = 10 μs
Turn-off time toff ⎯ 120 ⎯
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
TOSHIBA Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K3878 Part No. (or abbreviation code)
Please contact your TOSHIBA sales representative for details as to
Lot No.
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
Note 4
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2010-05-06
ID – VDS ID – VDS
10 20
COMMON SOURCE COMMON SOURCE
Tc = 25°C Tc = 25°C
PULSE TEST 15 PULSE TEST
8 10 16
DRAIN CURRENT ID (A)
6 5.25 12 6
5 5.5
4 8
4.75
5
2 4
VGS = 4.5 V
VGS = 4.5 V
0 0
0 2 4 6 8 10 0 4 8 12 16 20
VDS = 20 V Tc = 25°C
PULSE TEST PULSE TEST
16 16
DRAIN CURRENT ID (A)
12 25 12
ID = 9 A
8 8
100 Tc = −55°C
4.5
4 4
2.3
0 0
0 2 4 6 8 10 0 4 8 12 16 20
RDS (ON) − ID
⎪Yfs⎪ − ID 10
100 COMMON SOURCE
COMMON SOURCE
FORWARD TRANSFER ADMITTANCE
DRAIN−SOURCE ON-RESISTANCE
Tc = 25°C
VDS = 20 V
PULSE TEST PULSE TEST
RDS (ON) (Ω)
VGS = 10 V
⎪Yfs⎪ (S)
1
10
Tc = −55°C 100
25
1 0.1
0.1 1 10 100 1 10 100
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PULSE TEST
4 PULSE TEST
10
RDS (ON) (Ω)
ID = 9 A
2
4.5 2.3
1
10
1 1
5
3 VGS = 0 V
0 0.1
−80 −40 0 40 80 120 160 0 −0.4 −0.8 −1.2 −1.6
C − VDS Vth − Tc
10000 5
Vth (V)
Ciss
4
(pF)
1000
GATE THRESHOLD VOLTAGE
CAPACITANCE C
3
Coss
100
Crss 2
10
COMMON SOURCE
1
VGS = 0 V COMMON SOURCE
f = 1 MHz VDS = 10 V
Tc = 25°C ID = 1 mA
PULSE TEST
1 0
0.1 1 10 100 −80 −40 0 40 80 120 160
DYNAMIC INPUT/OUTPUT
PD − Tc CHARACTERISTICS
200
500 20
COMMON SOURCE
PD (W)
(V)
ID = 9 A
DRAIN−SOURCE VOLTAGE VDS (V)
Tc = 25°C
VDS
160 PULSE TEST
GATE−SOURCE VOLTAGE VGS
400 16
DRAIN POWER DISSIPATION
120
300 100 12
40 100 4
0
0 40 80 120 160 200 0 0
0 20 40 60 80 100
CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC)
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rth − tw
10
0.2
0.1
0.1
0.05
0.02
PDM
Duty = t/T
Rth (ch-c) = 0.833°C/W
0.001
10 μ 100 μ 1m 10 m 100 m 1 10
ID max (PULSE) *
AVALANCHE ENERGY EAS (mJ)
100 μs * 800
ID max (CONTINUOUS)
DRAIN CURRENT ID (A)
10
1 ms *
600
DC OPERATION
1
Tc = 25°C
400
0.1 200
* SINGLE NONPETITIVE PULSE
Tc = 25°C
Curves must be derated linearly with
0
increase in temperature. VDSS max 25 50 75 100 125 150
0.01
1 10 100 1000 10000 CHANNEL TEMPERATURE (INITIAL) Tch (°C)
BVDSS
15 V
−15 V IAR
VDD VDS
RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 17.6 mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠
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6 2010-05-06